Infineon Technologies IRFI4024H-117P
- Part No.:
- IRFI4024H-117P
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- TO-220-5 Full Pack
- Datasheet:
-
IRFI4024H-117P.pdf
- Description:
- MOSFET 2N-CH 55V 11A TO220-5
- Quantity:
- Payment:

- Shipping:

Inventory:5,566
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Product details
Overview
IRFI4024H-117P from Infineon Technologies (formerly International Rectifier) is a discrete power MOSFET half-bridge module designed for Class-D audio amplifier output stages. It integrates two N-channel 55 V, 48 mΩ RDS(on) MOSFETs in a single TO-220 Full-Pak 5-pin package, with typ. 8.9 nC total gate charge and 11 nC reverse recovery charge, enabling high-efficiency 100 W/channel operation into 6 Ω loads.
For engineers reviewing the IRFI4024H-117P datasheet, IRFI4024H-117P pinout, IRFI4024H-117P application, or IRFI4024H-117P equivalent, key selection criteria include low Qg/Qsw for THD reduction, optimized body diode Qrr for EMI control, thermal resistance of 9.21 °C/W (Junction-to-Case), and lead-free TO-220 Full-Pak mechanical compatibility with high-power audio PCB layouts.
Technical Context
This half-bridge device implements two matched N-channel enhancement-mode MOSFETs with integrated source and drain connections shared across a common thermal pad. Its internal gate resistance of 2.3 Ω damps ringing without external gate resistors, while low Qrr (11–17 nC) and fast trr (17–26 ns) minimize body-diode commutation losses during PWM switching in full-bridge Class-D topologies.
The device uses advanced silicon process technology to achieve 48 mΩ RDS(on) at VGS = 10 V and TJ = 25°C, with normalized on-resistance drift of ≤2× over –55°C to +150°C. Thermal design is supported by a dedicated case-mounting interface (6–32 or M3 screw, 10 lbf·in torque) and junction-to-case thermal resistance of 9.21 °C/W under steady-state conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage compatible with 48 V rail Class-D amplifiers |
| RDS(on) @ 10 V | 48 mΩ typ. - Enables <1.5 W conduction loss per FET at 7.7 A RMS (100 W/6 Ω) |
| Qg | 8.9 nC typ. - Reduces gate drive power and improves switching efficiency |
| Qsw | 4.3 nC typ. - Lowers switching loss and THD in high-frequency PWM (300–500 kHz) |
| Qrr | 11 nC typ. - Minimizes EMI and shoot-through risk during dead-time transitions |
| RθJC | 9.21 °C/W - Supports >50 W continuous dissipation with standard heatsink mounting |
| TJ max | 150 °C - Allows operation in sealed enclosures with ambient up to 85°C |
Pinout & Package
IRFI4024H-117P uses a TO-220 Full-Pak 5-pin package with isolated tab (non-electrical), lead-form option 117. The package features dual-source and dual-drain terminals for half-bridge layout symmetry and enhanced thermal transfer via case-mounting screw.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | High-side gate | Controls upper MOSFET; requires level-shifted gate drive referenced to floating source |
| G2 | Low-side gate | Controlled directly from ground-referenced PWM driver; lower noise susceptibility |
| D1 | High-side drain | Connects to positive rail; carries full load current during high-side conduction |
| D2 | Low-side drain | Internally tied to high-side source; forms half-bridge output node (OUT) |
| S1/S2 | Shared source node | Common source connection between both FETs; serves as half-bridge AC output reference |
Key Features
| Feature | Design Value |
|---|---|
| Integrated half-bridge topology | Reduces PCB footprint and layout complexity vs. discrete dual-FET solutions |
| Optimized Qrr and trr | Enables clean zero-voltage switching transitions and lowers radiated EMI in audio band |
| Low internal gate resistance (2.3 Ω) | Eliminates need for external gate resistors while damping parasitic oscillation |
| Lead-free TO-220 Full-Pak | Supports RoHS-compliant reflow assembly and direct mechanical mounting to heatsinks |
| Body diode with 1.3 V VSD | Provides low-loss freewheeling path during dead time without external Schottky |
Applications
| Home Audio Amplifiers | Automotive Infotainment Systems |
|---|---|
Use Scenario: 2×100 W stereo Class-D amplifier in compact AV receiver chassis with forced-air cooling. IC Role / Device Role / Timing Role: Half-bridge output stage switching at 350 kHz; delivers differential PWM output to LC filter. Use Value: 48 mΩ RDS(on) and 4.3 nC Qsw enable >92% peak efficiency and <0.05% THD+N at rated power. | Use Scenario: 4-channel Class-D amplifier in vehicle head unit with wide input voltage range (9–16 V). IC Role / Device Role / Timing Role: High-side/low-side pair per channel; operates with bootstrap gate drive and 55 V breakdown margin. Use Value: 150 °C TJ max and 9.21 °C/W RθJC ensure reliability under under-hood temperature cycling. |
| Professional PA Modules | Active Speaker Crossovers |
Use Scenario: 500 W bridged-tied-load (BTL) amplifier module for portable line arrays. IC Role / Device Role / Timing Role: Dual IRFI4024H-117P per channel in full-bridge configuration; driven by isolated gate drivers. Use Value: Matched RDS(on) and Qg between devices ensures balanced current sharing and reduced thermal imbalance. | Use Scenario: 3-way active speaker with digital crossover and analog Class-D output per band. IC Role / Device Role / Timing Role: Dedicated half-bridge per frequency band (LF/MF/HF); enables independent gain and phase control. Use Value: Low Qrr (11 nC) prevents intermodulation distortion when driving reactive loudspeaker loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N65M5 | 650 V, 48 A, D²PAK package; higher VDS, no integrated half-bridge | Designed for SMPS, not optimized for audio Qrr/THD | Requires discrete layout and external body diode management |
| IXFH40N50P | 500 V, 40 A, TO-247; single N-MOSFET, no half-bridge integration | Targeted at motor drives; higher Qg (120 nC) and Qrr (120 nC) | Not suitable for Class-D audio due to excessive switching loss and EMI |
Compared with STW48N65M5 and IXFH40N50P, IRFI4024H-117P uniquely delivers Class-D-optimized Qrr, matched half-bridge pairing, and TO-220 Full-Pak thermal performance-making it irreplaceable for high-fidelity, space-constrained audio output stages.
Availability
IRFI4024H-117P is available at Aetrix Electronics and suitable for home audio amplifiers, automotive infotainment systems, professional PA modules, and active speaker crossovers requiring stable component supply and consistent parametric matching across production batches.
Supply support for IRFI4024H-117P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to AEC-Q101 and IATF 16949 standards.
The IRFI4024H-117P belongs to Infineon's "HEXFET® Audio Power MOSFET" product line, engineered specifically for high-efficiency, low-distortion Class-D audio amplifier output stages where thermal robustness and switching fidelity are critical.
FAQ
What is the maximum continuous drain current rating for IRFI4024H-117P at 100°C case temperature?
The maximum continuous drain current is 11 A at TC = 100°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain case temperature and accounts for RDS(on) increase with junction temperature.
Can IRFI4024H-117P be used in synchronous rectification applications?
No - IRFI4024H-117P is configured as a half-bridge with fixed high-side/low-side topology and non-isolated source terminals. Its body diode characteristics and gate drive requirements are optimized for Class-D switching, not for synchronous rectifier control timing or bidirectional current handling.
Is the TO-220 Full-Pak 5-pin package electrically insulated?
Yes - the metal tab is electrically isolated from all internal terminals and serves solely as a thermal interface. Pin-to-tab isolation voltage exceeds 2500 V RMS, enabling safe mounting to grounded heatsinks without additional insulation hardware.
What is the recommended gate resistor value when driving IRFI4024H-117P?
None required - the device integrates 2.3 Ω internal gate resistance per FET. External gate resistors are unnecessary unless fine-tuning of dv/dt or EMI is needed; if added, values ≥1 Ω may be used to further damp ringing without compromising switching speed.
IRFI4024H-117P Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-220-5 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 11A
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 7.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 320pF @ 50V
- Power - Max:
- 14W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-5 Full-Pak
IRFI4024H-117P FAQ
1.How can I place an order for IRFI4024H-117P through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI4024H-117P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI4024H-117P reliable?
The price and inventory of IRFI4024H-117P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI4024H-117P is usually 5 days.
3.What payment methods are accepted for IRFI4024H-117P?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI4024H-117P transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI4024H-117P?
IRFI4024H-117P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI4024H-117P order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI4024H-117P?
For technical support, including IRFI4024H-117P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI4024H-117P requirements.
6.How does Aetrix verify that IRFI4024H-117P is sourced from the original manufacturer or authorized distributors?
All IRFI4024H-117P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI4024H-117P meets industry standards.
7.What is the process for return or replacement of IRFI4024H-117P?
All IRFI4024H-117P units undergo pre-shipment inspection (PSI). If there is an issue with IRFI4024H-117P, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI4024H-117P part is unused and in its original packaging.
Return procedure for IRFI4024H-117P:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFI4024H-117P Tags

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