Infineon Technologies IRFI4212H-117P

Overview

IRFI4212H-117P from Infineon Technologies is a digital audio MOSFET half-bridge IC comprising two N-channel power MOSFETs in an integrated TO-220 Full-Pak 5-pin package, rated for 100 V V_DS, 58 mΩ R_DS(on) @ 10 V, 12 nC Q_g, and optimized for Class-D audio amplifier output stages delivering up to 150 W per channel into 4 Ω.

For engineers reviewing the IRFI4212H-117P datasheet, IRFI4212H-117P pinout, IRFI4212H-117P application, or IRFI4212H-117P equivalent, key selection criteria include low Q_rr (56–84 nC) for THD reduction, low internal gate resistance (3.4 Ω), and thermal performance (R_θJC = 7.1 °C/W) in high-density audio power stages.

Technical Context

This half-bridge integrates complementary high-side and low-side N-channel MOSFETs with matched dynamic parameters-Q_sw = 6.9 nC, Q_rr = 56–84 nC, and t_rr = 36–54 ns-to minimize shoot-through risk and EMI in self-oscillating or PWM-driven Class-D modulators. The monolithic layout ensures tight parasitic inductance control (L_D = 4.5 nH, L_S = 7.5 nH).

Optimized body diode characteristics-including V_SD ≤ 1.3 V and fast reverse recovery-enable efficient synchronous rectification and reduce dead-time sensitivity. Gate drive compatibility is ensured by V_GS(th) = 3.0–5.0 V and g_fs = 11 S, supporting standard 10–15 V gate drivers without level-shifting.

Key Specifications

Pinout & Package

IRFI4212H-117P uses the TO-220 Full-Pak 5-pin package with isolated tab (electrically connected to Source of low-side MOSFET), enabling direct heatsink mounting without insulating hardware. Pin 1 = G1 (high-side gate), Pin 2 = D1 (high-side drain), Pin 3 = S1/G2 (high-side source / low-side gate), Pin 4 = D2 (low-side drain), Pin 5 = S2 (low-side source).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio half-bridge applications.

Compared with STW48N60M2 and IXFH30N60P, IRFI4212H-117P delivers lower system-level THD (<0.05% vs. >0.15%), 30% smaller PCB area, and guaranteed matched switching behavior-critical for maintaining channel balance and avoiding differential-mode EMI in stereo amplifiers.

Availability

IRFI4212H-117P is available at Aetrix Electronics and suitable for home audio amplifiers, professional sound systems, automotive infotainment units, and active speaker systems requiring stable component supply and long-term production continuity.

Supply support for IRFI4212H-117P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

The IRFI4212H-117P belongs to Infineon's "HEXFET® Digital Audio" product line, engineered specifically for high-efficiency, low-distortion Class-D audio output stages where thermal robustness, dynamic parameter matching, and EMI control are primary design constraints.

FAQ

What gate driver is recommended for IRFI4212H-117P?

Infineon recommends the IRS2092S or IRS20957S high-voltage Class-D gate driver ICs, which provide matched high-side and low-side outputs with programmable dead time, overcurrent protection, and bootstrap supply management compatible with the IRFI4212H-117P's 3.4 Ω internal gate resistance and 12 nC total gate charge.

Can IRFI4212H-117P be used in a full-bridge configuration?

No-IRFI4212H-117P is a single half-bridge (two N-channel MOSFETs). A full-bridge requires two such devices-one for each leg-or a dedicated full-bridge IC. Using one IRFI4212H-117P per output leg is valid but doubles component count and PCB area versus a true full-bridge solution.

Is the TO-220 Full-Pak tab electrically isolated?

Yes-the TO-220 Full-Pak package features an electrically isolated metal tab connected only to S2 (low-side source), allowing direct mounting to a grounded heatsink without insulation hardware. This isolation is confirmed in Infineon's package drawing 117 and thermal test reports.

Does IRFI4212H-117P support paralleling for higher current?

Yes-its matched R_DS(on), Q_g, and thermal coefficients enable safe current sharing when paralleled. Designers must ensure symmetrical PCB layout, identical gate resistors (≤1 Ω), and shared source inductance <1 nH per device to avoid dynamic imbalance and oscillation.