Infineon Technologies IRFI4212H-117PXKMA1
- Part No.:
- IRFI4212H-117PXKMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- TO-220-5 Full Pack, Formed Leads
- Datasheet:
-
IRFI4212H-117PXKMA1.pdf
- Description:
- MOSFET 2N-CH 100V 11A TO220-5
- Quantity:
- Payment:

- Shipping:

Inventory:822
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Product details
Overview
IRFI4212H-117PXKMA1 from Infineon Technologies is a discrete power MOSFET half-bridge module designed for Class-D audio amplifiers. It integrates two N-channel enhancement-mode MOSFETs in a single TO-220 Full-Pak 5-pin package, with VDS = 100 V, RDS(on) = 58 mΩ (typ.), Qg = 12 nC (typ.), and Qrr = 56 nC (typ.), enabling up to 150 W per channel into 4 Ω in half-bridge topology.
For engineers reviewing the IRFI4212H-117PXKMA1 datasheet, IRFI4212H-117PXKMA1 pinout, IRFI4212H-117PXKMA1 application, or IRFI4212H-117PXKMA1 equivalent, key selection criteria include low gate charge for THD reduction, optimized body-diode reverse recovery for EMI suppression, and thermal resistance RθJC = 7.1 °C/W for high-power audio stage reliability.
Technical Context
This half-bridge integrates complementary high-side and low-side N-channel MOSFETs with matched die characteristics and shared thermal path. Internal gate resistance (RG(int) = 3.4 Ω) and low Ciss (490 pF) support fast, controlled switching at >300 kHz carrier frequencies typical of Class-D modulation.
Optimized body-diode parameters - trr = 36 ns (typ.), Qrr = 56 nC (typ.), VSD = 1.3 V (max) - minimize shoot-through risk and voltage spikes during dead-time commutation in bridge-leg operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports rail voltages up to ±45 V in bridged-tied-load (BTL) configurations without avalanche stress. |
| RDS(on) @ 10 V | 58 mΩ (typ.) - enables <1.2 W conduction loss per FET at 6.6 A DC, critical for thermal management in compact audio enclosures. |
| Qg | 12 nC (typ.) - reduces gate drive power and allows use of lower-current gate drivers (e.g., IRS2092S), lowering system BOM cost. |
| Qrr | 56 nC (typ.) - limits di/dt-induced voltage overshoot during freewheeling, directly improving THD+N below 0.05% at full power. |
| RθJC | 7.1 °C/W - permits direct heatsink mounting with ≤10 °C temperature rise at 15 W dissipation, supporting passive cooling in consumer audio designs. |
| tr/tf | 8.3 ns / 4.3 ns - ensures clean edge fidelity for PWM duty cycles down to 5%, preserving audio signal integrity across 20 Hz–20 kHz bandwidth. |
Pinout & Package
IRFI4212H-117PXKMA1 uses the TO-220 Full-Pak 5-pin package with isolated tab (non-conductive mounting surface) and lead-form option 117. The package integrates dual MOSFETs sharing common source connection internally, with separate gate and drain terminals for independent control.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | High-side gate | Controls upper MOSFET; requires level-shifted or floating gate drive referenced to HS source node. |
| G2 | Low-side gate | Ground-referenced input; compatible with standard logic-level or dedicated low-side drivers (e.g., IR2110 LO). |
| D1 | High-side drain | Connects to positive rail (VCC); carries full load current during high-side conduction phase. |
| D2 | Low-side drain | Internally tied to high-side source; forms output node (OUT) when used in half-bridge configuration. |
| S1/S2 | Common source | Single external terminal connecting both MOSFET sources; serves as half-bridge output reference and return path for body-diode current. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated half-bridge topology | Reduces PCB footprint by 40% vs. discrete dual-MOSFET layout and eliminates interconnect inductance between devices. |
| Optimized Qsw + Qgd | 6.9 nC total switch charge enables <100 ns propagation delay in gate driver feedback loops, improving loop stability. |
| Low internal source inductance (LS) | 7.5 nH - minimizes voltage undershoot during turn-on, preventing false triggering of protection circuits in high-dV/dt environments. |
| Lead-free TO-220 Full-Pak | RoHS-compliant construction with tin-plated leads; qualified for consumer-grade reflow profiles (peak 260 °C, 10 s). |
Applications
| Home Theater Amplifiers | Active Loudspeaker Modules |
|---|---|
Use Scenario: 2×150 W stereo Class-D amplifier driving 4 Ω woofers in compact AV receivers. IC Role / Device Role / Timing Role: Dual-channel half-bridge power stage delivering PWM-switched output with <300 kHz carrier frequency and <100 ns dead time. Use Value: Low Qrr and matched RDS(on) ensure symmetrical switching transitions, reducing even-order harmonic distortion below –85 dBc. |
Use Scenario: Powered studio monitor with integrated DSP and analog input stage feeding Class-D output stage. IC Role / Device Role / Timing Role: Single-chip half-bridge replacing four discrete MOSFETs per channel, simplifying gate drive routing and thermal design. Use Value: RθJC = 7.1 °C/W allows direct bolt-down to aluminum chassis, eliminating need for supplemental heatsinks in 2U rack-mount enclosures. |
| Automotive Subwoofer Amplifiers | Portable PA Systems |
Use Scenario: 1-channel 300 W mono amplifier for vehicle subwoofer, operating from 12 V battery with boost converter front-end. IC Role / Device Role / Timing Role: High-efficiency output stage handling pulsed 40 A peak currents with minimal thermal derating over –40 °C to +85 °C ambient. Use Value: TJ max = 150 °C and low RDS(on) temperature coefficient enable stable operation under sustained bass transients without foldback. |
Use Scenario: Battery-powered 2×50 W portable column array with digital input and Class-D output stage. IC Role / Device Role / Timing Role: Compact half-bridge enabling <12 cm² PCB area per channel while maintaining >90% efficiency at 10 W average output. Use Value: Integrated gate resistance (3.4 Ω) damps ringing without external components, reducing bill-of-materials count and EMI filter complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N60M2 | 600 V VDS, higher RDS(on) (65 mΩ), no integrated half-bridge - requires external pairing and gate drive isolation. | Targeted at SMPS and motor drives, not optimized for audio-specific Qrr or THD performance. | Use only if higher breakdown voltage is required and board space allows discrete implementation. |
| IXFH30N60P | 600 V VDS, 30 A ID, single N-channel device - lacks integrated complementary topology and body-diode optimization for audio. | Designed for industrial inverters; exhibits 2.1× higher Qrr (118 nC), increasing THD in Class-D operation. | Not recommended for audio; consider only for non-critical high-voltage switching where EMI and linearity are secondary. |
Compared with STW48N60M2 and IXFH30N60P, IRFI4212H-117PXKMA1 delivers superior audio-specific performance via monolithic half-bridge integration, 36% lower Qrr, and 18% lower RDS(on), directly enabling higher power density and lower THD in space-constrained consumer audio systems.
Availability
IRFI4212H-117PXKMA1 is available at Aetrix Electronics and suitable for home theater amplifiers, active loudspeaker modules, and automotive subwoofer amplifiers requiring stable component supply and consistent parametric performance across production batches.
Supply support for IRFI4212H-117PXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
This device belongs to Infineon's "StrongIRFET™" family, engineered specifically for high-efficiency, high-fidelity Class-D audio power stages - emphasizing low Qrr, tight RDS(on) matching, and robust avalanche capability.
FAQ
What is the maximum continuous output power achievable per channel using IRFI4212H-117PXKMA1 in a half-bridge configuration?
At TC = 25 °C with adequate heatsinking (RθJC ≤ 7.1 °C/W), the device supports up to 150 W into a 4 Ω load per channel. This assumes VDD = ±35 V, 50% duty cycle, and proper dead-time control to avoid shoot-through. Derating to 90 W is recommended at TC = 85 °C.
Does IRFI4212H-117PXKMA1 require external gate resistors for stable switching?
Yes - although it features internal gate resistance (3.4 Ω), an external series gate resistor (typically 5–15 Ω) is required to dampen parasitic oscillation and control dV/dt during hard switching. Values depend on gate driver strength and PCB layout; 10 Ω is commonly used with IRS2092S drivers.
Can this part be used in synchronous rectification topologies?
No - IRFI4212H-117PXKMA1 is configured as a high-side/low-side N-channel half-bridge with common-source output. Its body diodes are optimized for Class-D freewheeling, not synchronous rectification; no independent control of the low-side source node is provided.
Is the TO-220 Full-Pak 5-pin package electrically isolated?
Yes - the metal tab is electrically isolated from all internal terminals (G1/G2/D1/D2/S1-S2), allowing direct mechanical mounting to a common heatsink without insulating hardware. Isolation voltage rating is 2.5 kV RMS per UL 60950-1.
IRFI4212H-117PXKMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-220-5 Full Pack, Formed Leads
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Rds On (Max) @ Id, Vgs:
- 72.5mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490pF @ 50V
- Power - Max:
- 18W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-5 Full-Pak
IRFI4212H-117PXKMA1 FAQ
1.How can I place an order for IRFI4212H-117PXKMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI4212H-117PXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI4212H-117PXKMA1 reliable?
The price and inventory of IRFI4212H-117PXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI4212H-117PXKMA1 is usually 5 days.
3.What payment methods are accepted for IRFI4212H-117PXKMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI4212H-117PXKMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI4212H-117PXKMA1?
IRFI4212H-117PXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI4212H-117PXKMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI4212H-117PXKMA1?
For technical support, including IRFI4212H-117PXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI4212H-117PXKMA1 requirements.
6.How does Aetrix verify that IRFI4212H-117PXKMA1 is sourced from the original manufacturer or authorized distributors?
All IRFI4212H-117PXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI4212H-117PXKMA1 meets industry standards.
7.What is the process for return or replacement of IRFI4212H-117PXKMA1?
All IRFI4212H-117PXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFI4212H-117PXKMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI4212H-117PXKMA1 part is unused and in its original packaging.
Return procedure for IRFI4212H-117PXKMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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