Vishay Siliconix IRFI530G

Overview

IRFI530G from Vishay Siliconix is a 100 V, 9.7 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 0.16 Ω R_DS(on) at V_GS = 10 V, and 2.5 kV_RMS isolation for high-voltage industrial switching applications such as AC-DC power supplies and motor controls.

For engineers reviewing the IRFI530G datasheet, IRFI530G pinout, IRFI530G application, or IRFI530G equivalent, this page delivers verified thermal resistance (R_thJC = 3.6 °C/W), avalanche energy rating (E_AS = 100 mJ), body diode recovery time (t_rr = 150–280 ns), and gate charge (Q_g = 33 nC) to support robust hard-switching design validation.

Technical Context

The IRFI530G employs a third-generation silicon process optimized for fast switching and ruggedized avalanche performance, with dynamic dV/dt rating of 5.5 V/ns and integrated body diode rated for 9.7 A continuous source-drain current. Its isolated TO-220 FULLPAK construction eliminates need for mica insulators in heatsink mounting.

Thermal design is enabled by low junction-to-case resistance (3.6 °C/W) and 175 °C maximum operating temperature, while gate drive compatibility is ensured by standard ±20 V V_GS rating and 2.0–4.0 V threshold voltage range - supporting both 5 V and 10 V logic-level control without level-shifting.

Key Specifications

Pinout & Package

IRFI530G uses the TO-220 FULLPAK package with electrically isolated metal tab (drain-connected), enabling direct heatsink mounting without insulating hardware. The package provides 2.5 kV_RMS isolation (60 s, 60 Hz), 4.8 mm creepage distance, and 175 °C max operating temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP10NK100ZFP and FQP10N10L, the IRFI530G uniquely combines 100 V rating, 0.16 Ω on-resistance, 2.5 kV isolation, and 175 °C operation - making it optimal for thermally constrained, safety-critical 100 V industrial switching where both efficiency and reinforced insulation are required.

Availability

IRFI530G is available at Aetrix Electronics and suitable for AC-DC power supplies, motor drives, industrial lighting ballasts, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFI530G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFI530G belongs to Vishay's third-generation power MOSFET family engineered for ruggedized switching in commercial-industrial power conversion - emphasizing fast turn-off, high avalanche tolerance, and simplified thermal/mechanical integration via isolated packaging.

FAQ

What is the maximum continuous drain current for IRFI530G at 100 °C case temperature?

The IRFI530G supports 6.9 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 3.6 °C/W and actual power dissipation to ensure operation remains within the -55 to +175 °C TJ range. The IRFI530G datasheet confirms this value under Note "a" for repetitive ratings.

Does IRFI530G have a built-in body diode, and what are its key parameters?

Yes, the IRFI530G integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 9.7 A continuous source-drain current (I_S), 39 A pulsed diode forward current (I_SM), 2.5 V forward voltage (V_SD) at 9.7 A and 25 °C, and reverse recovery time (t_rr) of 150–280 ns. These values are measured under standardized conditions in the IRFI530G datasheet and directly impact freewheeling efficiency and EMI in hard-switched topologies.

Can IRFI530G be used as a direct replacement for standard TO-220 MOSFETs without layout changes?

No - the IRFI530G uses the TO-220 FULLPAK package with an electrically isolated drain tab, unlike standard TO-220 devices where the tab is internally connected to drain and uninsulated. While footprint and pinout match (G-D-S), mechanical mounting requires verification that the heatsink is not grounded or referenced to circuit ground, since the tab is isolated and rated for 2.5 kV_RMS. Using IRFI530G in place of a non-isolated TO-220 may introduce unintended floating potentials unless isolation is accounted for in the system design.

What is the gate threshold voltage range for IRFI530G, and how does it affect drive requirements?

The IRFI530G has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, per its datasheet specifications. This means reliable turn-on begins above ~2.5 V, but full enhancement (to achieve rated R_DS(on)) requires V_GS ≥ 10 V. It is not a logic-level device; therefore, direct 3.3 V or 5 V MCU GPIO drive will result in high conduction loss. A gate driver capable of delivering ≥10 V with sufficient peak current (≥1 A) is recommended for optimal IRFI530G performance.

How does the 2.5 kV_RMS isolation rating of IRFI530G impact safety certification in end equipment?

The 2.5 kV_RMS isolation rating (60 s, 60 Hz) of the IRFI530G satisfies reinforced insulation requirements for many industrial power systems per IEC 62368-1 and IEC 60950-1, particularly when combined with ≥4.8 mm creepage distance. This eliminates need for external isolation barriers like mica sheets, simplifying certification. However, final safety approval depends on full system-level testing - including PCB spacing, enclosure design, and grounding scheme - so the IRFI530G's isolation is necessary but not sufficient alone for compliance.