Vishay Siliconix IRFI614G
- Part No.:
- IRFI614G
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFI614G.pdf
- Description:
- MOSFET N-CH 250V 2.1A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:9,178
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFI614G from Vishay Siliconix is a 250 V, 2.1 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 2.5 kVRMS isolation rating, and 2.0 Ω RDS(on) at VGS = 10 V. It delivers rugged unclamped inductive switching capability (61 mJ EAS) and supports high-voltage industrial power supplies, motor control snubbers, and AC solid-state relays.
For engineers reviewing the IRFI614G datasheet, IRFI614G pinout, IRFI614G application, or IRFI614G equivalent, this page provides verified thermal resistance (RthJC = 5.5 °C/W), gate charge (Qg = 8.2 nC), body diode recovery (trr = 190–390 ns), and isolation-critical mounting details for heatsink-integrated designs.
Technical Context
This third-generation silicon-based power MOSFET uses planar V-groove technology to achieve low RDS(on) while maintaining high dV/dt immunity (2.0 V/ns) and robust avalanche performance. Its isolated TO-220 FULLPAK construction eliminates external insulation hardware by integrating 4.8 mm sink-to-lead creepage and 2.5 kVRMS dielectric strength.
The device features fast switching (td(on) = 7.0 ns, tf = 7.0 ns) with controlled internal inductance (LD = 4.5 nH, LS = 7.5 nH) and optimized capacitance profile (Ciss = 140 pF, Crss = 9.6 pF), enabling stable operation in hard-switched flyback and forward converters up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Supports mains-referenced switching in 230 VAC input stages without derating. |
| RDS(on) | 2.0 Ω @ VGS = 10 V - Enables <2.7 W conduction loss at 1.3 A continuous drain current. |
| Qg | 8.2 nC - Low gate drive energy reduces controller loading and enables 100+ kHz operation with standard gate drivers. |
| EAS | 61 mJ - Withstands single-pulse inductive energy without external snubber in relay replacement circuits. |
| RthJC | 5.5 °C/W - Allows direct heatsink mounting with minimal thermal interface resistance for compact thermal design. |
| trr | 190–390 ns - Predictable body diode recovery supports synchronous rectification in low-frequency DC-DC stages. |
| VGS(th) | 2.0–4.0 V - Ensures reliable turn-on with standard 10 V gate drivers while avoiding false triggering near 0 V. |
Pinout & Package
IRFI614G uses the TO-220 FULLPAK package: isolated metal tab (drain-connected), 3-pin through-hole outline with 2.54 mm lead pitch, 15.87 mm length, and 10.10 mm width. The molded compound provides 2.5 kVRMS isolation between tab and leads, eliminating need for mica washers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal requiring ≤ ±20 V drive; 1.8 nC Qgs ensures rapid turn-on with low driver stress. |
| D | Drain | High-side switching node; internally connected to isolated tab-must be mounted to heatsink with electrical isolation maintained. |
| S | Source | Power return path and reference for gate drive; 7.5 nH internal source inductance affects high-dI/dt ringing behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK | 2.5 kVRMS isolation replaces mica + silicone grease assembly, reducing BOM count and thermal interface resistance by ~30 %. |
| High dV/dt immunity | 2.0 V/ns rated peak diode recovery dV/dt prevents spurious turn-on during fast voltage transients in inductive loads. |
| Rugged avalanche rating | 61 mJ single-pulse EAS allows safe operation in unclamped inductive switching without external protection components. |
| Low RthJC | 5.5 °C/W junction-to-case thermal resistance enables >20 W dissipation with modest heatsinking at 100 °C ambient. |
| Controlled body diode | 190–390 ns reverse recovery time and 0.64–1.3 μC Qrr support predictable commutation in freewheeling paths. |
Applications
| AC Solid-State Relay | Industrial Power Supply Snubber |
|---|---|
Use Scenario: Replacing electromechanical relays in HVAC control panels where silent operation and >100,000-cycle lifetime are required. IC Role / Device Role / Timing Role: High-voltage switch controlling 230 VAC load via zero-crossing-triggered gate drive. Use Value: 250 V VDS and 2.5 kVRMS isolation ensure safe mains-referenced operation without auxiliary isolation transformers. |
Use Scenario: Clamping voltage spikes across transformer windings in 48 V telecom power supplies. IC Role / Device Role / Timing Role: Passive clamp switch absorbing leakage inductance energy during primary-side MOSFET turn-off. Use Value: 61 mJ EAS rating handles repetitive clamping events without degradation under 100 kHz switching. |
| Motor Control Brake Circuit | DC-DC Converter Freewheeling Switch |
Use Scenario: Dynamic braking of 24–48 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switch sinking motor back-EMF into a resistor bank during deceleration. Use Value: 2.1 A continuous ID and 8.4 A pulsed IDM support 500 W peak brake power with minimal heatsink volume. |
Use Scenario: Secondary-side freewheeling path in isolated 12 V → 3.3 V flyback converters for PLC I/O modules. IC Role / Device Role / Timing Role: Synchronous rectifier replacement using body diode conduction during off-time. Use Value: Predictable 190–390 ns trr and 2.0 V VSD enable accurate timing margining for synchronous gate control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK25Z | 250 V VDS, 2.0 A ID, but no isolation rating; RDS(on) = 3.0 Ω; TO-220 non-isolated package. | Requires external insulator for heatsink mounting; unsuitable for direct mains-referenced isolation-critical use. | Select when isolation is handled at board level and lower cost outweighs thermal performance trade-off. |
| IXTP2N25P | 250 V VDS, 2.0 A ID, 2.5 kVRMS isolation, but RDS(on) = 3.5 Ω; TO-220FP package with same footprint. | Higher conduction loss limits continuous current to ~1.0 A at 100 °C; identical mounting but reduced efficiency. | Select when legacy IXYS footprint compatibility is mandatory and 0.5 Ω higher RDS(on) is acceptable. |
Compared with STP2NK25Z and IXTP2N25P, the IRFI614G uniquely combines 2.5 kVRMS isolation, 2.0 Ω RDS(on), and 5.5 °C/W RthJC-enabling compact, self-insulated high-voltage switching without thermal or safety compromises.
Availability
IRFI614G is available at Aetrix Electronics and suitable for AC solid-state relays, industrial power supply snubbers, and motor control brake circuits requiring stable component supply and long-term lifecycle assurance.
Supply support for IRFI614G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFI614G belongs to Vishay's isolated high-voltage power MOSFET product line, engineered specifically for mains-connected switching applications where galvanic isolation, thermal efficiency, and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current for IRFI614G at 100 °C case temperature?
The IRFI614G supports 1.3 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be validated against actual heatsink performance and ambient conditions in the final design. The IRFI614G datasheet confirms this value under Note "a" for repetitive ratings.
Does IRFI614G require an insulating washer when mounted to a heatsink?
No, the IRFI614G does not require an insulating washer because its TO-220 FULLPAK package integrates 2.5 kVRMS isolation between the drain-connected tab and leads. The molding compound provides equivalent isolation to a 100 µm mica barrier, allowing direct metal-to-metal heatsink contact while maintaining safety clearance. This feature is explicitly stated in the Vishay IRFI614G datasheet description section.
What is the gate threshold voltage range for IRFI614G, and how does it affect drive circuit design?
The IRFI614G has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C, measured with VDS = VGS and ID = 250 µA. This ensures reliable turn-on with standard 10 V gate drivers while preventing false triggering from noise near 0 V. Drive circuits must supply ≥5 V above VGS(th) max to guarantee full enhancement, as confirmed in the Specifications table on page 2 of the IRFI614G datasheet.
Can IRFI614G be used in avalanche mode, and what is its rated single-pulse energy?
Yes, the IRFI614G is rated for single-pulse avalanche operation with EAS = 61 mJ under test conditions of VDD = 50 V, starting TJ = 25 °C, L = 22 mH, Rg = 25 Ω, and IAS = 2.1 A. This capability is documented in Figure 12 and the Absolute Maximum Ratings table, making the IRFI614G suitable for inductive load switching without external snubbers in properly designed circuits.
What is the typical reverse recovery time of the body diode in IRFI614G, and how is it measured?
The IRFI614G body diode exhibits a typical reverse recovery time (trr) of 190 ns, with a maximum of 390 ns, measured at TJ = 25 °C, IF = 2.7 A, and dI/dt = 100 A/µs. This parameter is specified in the Diode Characteristics table on page 2 of the IRFI614G datasheet and directly impacts switching losses and EMI in freewheeling applications.
IRFI614G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 23W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFI614G FAQ
1.How can I place an order for IRFI614G through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI614G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI614G reliable?
The price and inventory of IRFI614G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI614G is usually 5 days.
3.What payment methods are accepted for IRFI614G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI614G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI614G?
IRFI614G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI614G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI614G?
For technical support, including IRFI614G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI614G requirements.
6.How does Aetrix verify that IRFI614G is sourced from the original manufacturer or authorized distributors?
All IRFI614G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI614G meets industry standards.
7.What is the process for return or replacement of IRFI614G?
All IRFI614G units undergo pre-shipment inspection (PSI). If there is an issue with IRFI614G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI614G part is unused and in its original packaging.
Return procedure for IRFI614G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFI614G Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

