Vishay Siliconix IRFI620GPBF

Overview

IRFI620GPBF from Vishay Siliconix is a 200 V, 4.1 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 0.80 Ω R_DS(on) at V_GS = 10 V, and 2.5 kV_RMS isolation rating. It serves as a high-voltage switching element in offline AC-DC power supplies, motor control circuits, and industrial solenoid drivers requiring reinforced insulation and thermal robustness.

For engineers reviewing the IRFI620GPBF datasheet, IRFI620GPBF pinout, IRFI620GPBF application, or IRFI620GPBF equivalent, this page delivers verified electrical specs, validated thermal performance, confirmed TO-220 FULLPAK terminal mapping, and real-world substitution guidance for high-reliability power switching designs.

Technical Context

This device implements a third-generation planar vertical DMOS structure optimized for rugged unclamped inductive switching, featuring 100 mJ single-pulse avalanche energy and 5.0 V/ns peak diode recovery dV/dt capability. Its isolated TO-220 FULLPAK package integrates a thermally efficient molding compound enabling direct heatsink mounting without mica washers.

The MOSFET exhibits a gate threshold voltage range of 2.0–4.0 V, low 14 nC total gate charge, and body diode reverse recovery time of 150–300 ns at 100 A/μs dI/dt - characteristics critical for hard-switched flyback and forward converters operating up to 150 °C junction temperature.

Key Specifications

Pinout & Package

IRFI620GPBF uses the TO-220 FULLPAK package: isolated metal tab (drain), 3-pin through-hole outline (13.1 mm × 10.1 mm × 4.7 mm), with creepage distance ≥4.8 mm between sink and leads. The molded isolation eliminates need for external insulators.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Compared with STP20NM20 and IXTP20N20P, IRFI620GPBF offers optimal balance of isolation integrity, thermal efficiency (4.1 °C/W), and moderate gate drive burden (14 nC) - making it ideal for space-constrained, safety-critical 4–5 A switching applications where reliability trumps raw current capacity.

Availability

IRFI620GPBF is available at Aetrix Electronics and suitable for industrial motor control, offline AC-DC power supplies, solenoid drivers, and DC-DC converter high-side switching requiring stable component supply and long-term lifecycle assurance.

Supply support for IRFI620GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and safety-certified packaging.

The IRFI620GPBF belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for industrial and commercial power conversion systems demanding reinforced insulation, high avalanche capability, and simplified thermal mechanical integration.

FAQ

What is the maximum continuous drain current rating for IRFI620GPBF at 100 °C case temperature?

The IRFI620GPBF has a maximum continuous drain current of 2.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be applied in designs where heatsink temperature exceeds 25 °C ambient. The IRFI620GPBF maintains safe operation up to 150 °C junction temperature under these conditions.

Does IRFI620GPBF require external insulation when mounted to a heatsink?

No, the IRFI620GPBF does not require external insulation when mounted to a heatsink. Its TO-220 FULLPAK package features an electrically isolated metal tab rated for 2.5 kV_RMS isolation (60 s, 60 Hz), eliminating the need for mica washers or silicone pads. This isolation is equivalent to a 100 µm mica barrier used with standard TO-220 devices, and the IRFI620GPBF is designed for direct clip or screw mounting.

What is the typical body diode reverse recovery time (t_rr) for IRFI620GPBF?

The typical body diode reverse recovery time (t_rr) for IRFI620GPBF is 150 ns, with a maximum of 300 ns, measured at T_J = 25 °C, I_F = 4.8 A, and dI/dt = 100 A/μs. This parameter is critical for minimizing switching losses in freewheeling paths and is explicitly characterized in the datasheet's Drain-Source Body Diode Characteristics section. The IRFI620GPBF's t_rr supports reliable operation in hard-switched topologies up to 100 kHz.

Can IRFI620GPBF be used in avalanche-mode operation?

Yes, the IRFI620GPBF is rated for repetitive avalanche operation with I_AR = 4.1 A and E_AR = 3.0 mJ, and for single-pulse avalanche with E_AS = 100 mJ. These ratings are validated under defined test conditions (V_DD = 50 V, L = 8.9 mH, R_g = 25 Ω). Designers must ensure junction temperature remains within -55 to +150 °C during avalanche events. The IRFI620GPBF's ruggedized construction supports such operation without derating in properly designed circuits.

What is the gate-source leakage current specification for IRFI620GPBF?

The gate-source leakage current (I_GSS) for IRFI620GPBF is specified as ±100 nA maximum at V_GS = ±20 V and T_J = 25 °C. This low leakage ensures stable gate biasing and minimal power loss in high-impedance gate drive networks. The value is confirmed in the Static Electrical Characteristics table of the official Vishay datasheet (Document Number: 91146), and applies directly to the IRFI620GPBF variant.