Vishay Siliconix IRFI720GPBF
- Part No.:
- IRFI720GPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFI720GPBF.pdf
- Description:
- MOSFET N-CH 400V 2.6A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:1,000
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Product details
Overview
IRFI720GPBF from Vishay Siliconix is a 400 V, 2.6 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 1.8 Ω RDS(on) at VGS = 10 V, 20 nC total gate charge, and 2.5 kVRMS isolation rating - designed for high-voltage AC/DC power supplies and offline SMPS primary-side switching.
For engineers reviewing the IRFI720GPBF datasheet, IRFI720GPBF pinout, IRFI720GPBF application, or IRFI720GPBF equivalent, key selection criteria include its isolated TO-220 FULLPAK thermal performance (RthJC = 4.1 °C/W), avalanche ruggedness (EAS = 150 mJ), and body diode recovery (trr = 300–600 ns) in flyback and forward converter topologies.
Technical Context
This third-generation silicon power MOSFET uses planar vertical DMOS technology optimized for high-voltage switching with low conduction loss and robust unclamped inductive switching capability. Its isolated TO-220 FULLPAK construction integrates high-dielectric molding compound enabling 2.5 kVRMS isolation without external insulators.
The device features a fast intrinsic body diode (Qrr = 1.5–3.0 μC, trr = 300–600 ns) and dynamic dV/dt immunity of 4.0 V/ns, supporting reliable operation in discontinuous conduction mode (DCM) flyback converters where diode reverse recovery stresses are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports 230 VAC mains input with ≥2× safety margin in offline converters |
| RDS(on) | 1.8 Ω @ VGS = 10 V - enables <2.6 A continuous drain current at TC = 25 °C with ≤12 W conduction loss |
| Qg | 20 nC - determines gate drive power requirement and switching speed in hard-switched topologies |
| EAS | 150 mJ - specifies single-pulse avalanche energy handling for inductive load transients |
| RthJC | 4.1 °C/W - enables efficient heatsink coupling; allows 30 W dissipation at ΔT = 123 °C above case |
| trr | 300–600 ns - defines body diode recovery window affecting EMI and voltage overshoot in DCM operation |
| VGS(th) | 2.0–4.0 V - ensures reliable turn-on with standard 10 V gate drivers while avoiding false triggering |
Pinout & Package
IRFI720GPBF uses the TO-220 FULLPAK package: isolated plastic body with metal tab (drain-connected), 3-pin through-hole configuration, 15.87 mm length, 10.10 mm width, and 4.70 mm height. The molded compound provides 2.5 kVRMS isolation between drain tab and leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level signal to modulate channel conductivity; requires 20 nC charge for full enhancement |
| D (Drain) | Main current output / high-side switch node | Connected internally to isolated metal tab; rated for 400 V blocking and 10 A pulsed current |
| S (Source) | Current return path / reference node | Serves as common reference for gate drive and current sensing; tied to power ground in low-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK | Eliminates need for mica insulator and shoulder washer in heatsink mounting - reduces assembly cost and thermal interface resistance |
| 2.5 kVRMS isolation | Enables direct mounting to grounded heatsinks in Class I AC/DC systems without creepage/clearance violations |
| Low RthJC = 4.1 °C/W | Supports higher power density by transferring heat efficiently from die to heatsink under continuous 30 W operation |
| Dynamic dV/dt rating = 4.0 V/ns | Prevents spurious turn-on during high-slew-rate voltage transients in high-frequency switching applications |
| Unclamped inductive switching ruggedness | Withstands 150 mJ single-pulse avalanche energy - critical for reliability in transformer-coupled topologies with leakage inductance |
Applications
| AC/DC Power Supply | Flyback Converter |
|---|---|
Use Scenario: Primary-side switch in universal-input (85–265 VAC) offline power supply delivering 15–30 W. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET controlling energy transfer via transformer primary winding. Use Value: 400 V VDS rating and 150 mJ EAS ensure safe operation during line surges and transformer reset spikes. | Use Scenario: Main switching element in isolated DCM flyback converter for LED drivers and auxiliary supplies. IC Role / Device Role / Timing Role: Synchronous rectification not used; relies on intrinsic body diode for secondary-side freewheeling during off-time. Use Value: 300–600 ns trr and 1.5–3.0 μC Qrr minimize voltage overshoot and EMI generation during diode recovery. |
| Forward Converter | Industrial Control Input Stage |
Use Scenario: Primary-side switch in 100–200 W forward converter with active clamp or RCD snubber. IC Role / Device Role / Timing Role: Hard-switched main transistor operating at 50–200 kHz with fixed duty cycle. Use Value: 20 nC Qg and 1.8 Ω RDS(on) balance switching loss and conduction loss for optimal efficiency at mid-load conditions. | Use Scenario: High-side switch in industrial PLC input module isolating 24 VDC sensor signals from microcontroller. IC Role / Device Role / Timing Role: Discrete power switch interfacing field-side 24 V inputs to logic-level control circuitry. Use Value: Isolated TO-220 FULLPAK allows direct heatsink mounting without additional insulation - simplifying PCB layout and improving long-term thermal stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK50ZFP | 500 V VDS, 1.9 Ω RDS(on), TO-220FP (non-isolated), no specified isolation rating | Requires external insulator for heatsink mounting; lower dV/dt immunity (2.5 V/ns) | Choose when higher voltage margin is needed and isolation hardware is acceptable |
| IXTP1R2N50D2 | 500 V VDS, 1.2 Ω RDS(on), TO-220AB (non-isolated), 100 mJ EAS | Lacks integrated isolation; higher conduction efficiency but reduced avalanche robustness | Prefer for high-efficiency, non-isolated designs where thermal interface is controlled externally |
Compared with STP4NK50ZFP and IXTP1R2N50D2, the IRFI720GPBF uniquely combines certified 2.5 kVRMS isolation, 4.1 °C/W thermal resistance, and 150 mJ avalanche energy - making it the only option requiring no supplemental insulation in grounded-heatsink, high-reliability AC/DC primary-side applications.
Availability
IRFI720GPBF is available at Aetrix Electronics and suitable for AC/DC power supplies, flyback converters, and industrial control input stages requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.
Supply support for IRFI720GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-voltage, and thermally optimized devices.
The IRFI720GPBF belongs to Vishay's third-generation high-voltage power MOSFET family engineered for ruggedized switching in commercial and industrial offline power conversion - prioritizing isolation integrity, avalanche survivability, and thermal performance over raw speed.
FAQ
What is the maximum continuous drain current for IRFI720GPBF at 100 °C case temperature?
The IRFI720GPBF supports 1.7 A continuous drain current at TC = 100 °C, derated linearly from 2.6 A at 25 °C using the 0.24 W/°C derating factor. This reflects thermal limitation of the TO-220 FULLPAK package rather than semiconductor capability, and must be verified against actual heatsink performance in the target application.
Does IRFI720GPBF require an insulating pad when mounted to a grounded heatsink?
No - the IRFI720GPBF does not require an insulating pad because its TO-220 FULLPAK package incorporates high-dielectric molding compound providing 2.5 kVRMS isolation between the drain-connected metal tab and all leads. This eliminates mica or silicone pads in Class I AC/DC designs per IEC 60950-1 creepage requirements.
What is the typical body diode reverse recovery charge (Qrr) of IRFI720GPBF?
The IRFI720GPBF has a typical body diode reverse recovery charge (Qrr) of 1.5–3.0 μC, measured at TJ = 25 °C, IF = 3.3 A, and dI/dt = 100 A/μs. This value directly impacts switching loss and voltage overshoot in flyback and forward converters operating in discontinuous conduction mode.
Can IRFI720GPBF be used in place of a standard TO-220 MOSFET without layout changes?
Yes - the IRFI720GPBF uses standard TO-220 FULLPAK mechanical dimensions and 3-pin through-hole footprint compatible with standard TO-220 sockets and PCB land patterns. However, its isolated tab enables direct heatsink mounting, which may simplify thermal design but does not alter PCB layout requirements.
What is the gate threshold voltage range for IRFI720GPBF?
The IRFI720GPBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA and TJ = 25 °C. This ensures compatibility with standard 10 V gate drivers while preventing unintended turn-on from noise or leakage currents below 2 V.
IRFI720GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.8Ohm @ 1.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 410 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFI720GPBF FAQ
1.How can I place an order for IRFI720GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI720GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI720GPBF reliable?
The price and inventory of IRFI720GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI720GPBF is usually 5 days.
3.What payment methods are accepted for IRFI720GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI720GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI720GPBF?
IRFI720GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI720GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI720GPBF?
For technical support, including IRFI720GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI720GPBF requirements.
6.How does Aetrix verify that IRFI720GPBF is sourced from the original manufacturer or authorized distributors?
All IRFI720GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI720GPBF meets industry standards.
7.What is the process for return or replacement of IRFI720GPBF?
All IRFI720GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI720GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI720GPBF part is unused and in its original packaging.
Return procedure for IRFI720GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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