Vishay Siliconix IRFI730GPBF

Overview

IRFI730GPBF from Vishay Siliconix is a 400 V, 3.7 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 1.0 Ω R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and 2.5 kV_RMS isolation rating-designed for high-voltage DC-DC converters, AC-DC front-end switches, and industrial motor control circuits requiring reinforced insulation.

For engineers reviewing the IRFI730GPBF datasheet, IRFI730GPBF pinout, IRFI730GPBF application, or IRFI730GPBF equivalent, this device's verified 2.5 kV_RMS isolation, 3.6 Ω⁻¹ transconductance, 4.0 V/ns peak diode recovery dV/dt, and TO-220 FULLPAK mechanical compatibility are critical for safety-critical switching designs where creepage (4.8 mm) and thermal resistance (R_thJC = 3.6 °C/W) directly impact system reliability.

Technical Context

This third-generation power MOSFET uses planar V-groove silicon technology optimized for rugged unclamped inductive switching, with specified repetitive avalanche current (I_AR = 3.7 A) and single-pulse avalanche energy (E_AS = 200 mJ). Its body diode exhibits t_rr = 260–530 ns and Q_rr = 1.2–2.2 μC under standardized 100 A/μs dI/dt conditions.

The TO-220 FULLPAK package integrates molded isolation equivalent to a 100 μm mica barrier, enabling direct heatsink mounting without additional insulators. Gate drive characteristics include Q_gd/Q_g = 57.9%, supporting predictable turn-off timing (t_d(off) = 38 ns, R_g = 12 Ω), while internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) are characterized for layout-sensitive high-dI/dt applications.

Key Specifications

Pinout & Package

IRFI730GPBF uses the TO-220 FULLPAK package: isolated plastic body with metal tab (drain-connected), 3-pin through-hole configuration, 4.8 mm sink-to-lead creepage, and 2.5 kV_RMS isolation rated for 60 s at 60 Hz.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP4NK50ZFP and IXTP1R4N50P, IRFI730GPBF uniquely combines certified 2.5 kV_RMS isolation, 200 mJ avalanche energy, and TO-220 FULLPAK mechanical integration-making it the only option among the three qualified for direct-mount, safety-isolated, high-reliability industrial switching without design compromises.

Availability

IRFI730GPBF is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, high-voltage DC-DC converters, and motor drive inverter stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for IRFI730GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFI730GPBF belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for safety-critical AC-input power conversion and motor control systems where reinforced insulation, avalanche ruggedness, and thermal performance are non-negotiable.

FAQ

What is the maximum continuous drain current for IRFI730GPBF at 100 °C case temperature?

The IRFI730GPBF has a continuous drain current rating of 2.3 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be applied in thermal design calculations for sustained operation. The IRFI730GPBF datasheet confirms this value under "Continuous drain current" with footnote indicating TC = 100 °C condition.

Does IRFI730GPBF have a fully isolated package, and what is its isolation rating?

Yes, the IRFI730GPBF features a fully isolated TO-220 FULLPAK package rated for 2.5 kV_RMS isolation at 60 Hz for 60 seconds, with 4.8 mm sink-to-lead creepage distance. This isolation is achieved via proprietary molding compound and eliminates the need for external insulating hardware-verified in Vishay document S21-0974-Rev. C.

What is the gate threshold voltage range for IRFI730GPBF, and is it logic-level compatible?

The IRFI730GPBF has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, per its Specifications table. It is not logic-level compatible-it requires ≥10 V gate drive for full enhancement and low R_DS(on); operation below 5 V results in partial turn-on and excessive conduction loss.

Can IRFI730GPBF be used in avalanche mode, and what are its rated avalanche parameters?

Yes, the IRFI730GPBF is rated for repetitive avalanche operation with I_AR = 3.7 A and E_AR = 3.5 mJ, and single-pulse avalanche energy of E_AS = 200 mJ. These values are validated per test conditions in the datasheet (note b: V_DD = 50 V, L = 25 mH, R_g = 25 Ω) and support robustness in inductive switching applications without external protection.

What are the key thermal resistance values for IRFI730GPBF, and how do they impact heatsink selection?

The IRFI730GPBF has R_thJC = 3.6 °C/W (junction-to-case) and R_thJA = 65 °C/W (junction-to-ambient, max). For a 35 W power dissipation, the case-to-ambient thermal path must handle 65 °C/W – 3.6 °C/W = 61.4 °C/W, meaning heatsink + interface resistance must be ≤61.4 °C/W to maintain T_J ≤ 150 °C. The IRFI730GPBF's low R_thJC enables efficient heat transfer to the heatsink.