Vishay Siliconix IRFI820GPBF

Overview

IRFI820GPBF from Vishay Siliconix is a 500 V, 2.1 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 3.0 Ω R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 2.5 kV_RMS isolation rating - designed for high-voltage flyback and offline SMPS primary-side switching.

For engineers reviewing the IRFI820GPBF datasheet, IRFI820GPBF pinout, IRFI820GPBF application, or IRFI820GPBF equivalent, this device's verified 4.1 °C/W junction-to-case thermal resistance, 3.5 V/ns peak diode recovery dV/dt, and 110 mJ single-pulse avalanche energy support robust design in industrial AC-DC adapters, LED drivers, and UPS hold-up circuits.

Technical Context

This MOSFET employs a third-generation planar vertical DMOS structure optimized for fast switching and rugged unclamped inductive switching (UIS) performance. Its isolated TO-220 FULLPAK package integrates high-dielectric-strength molding compound enabling direct heatsink mounting without mica insulators.

The device features a body diode with 260–520 ns reverse recovery time and 0.70–1.4 μC Q_rr, supporting quasi-resonant and hard-switched topologies where diode commutation stress must be managed. Gate threshold voltage (2.0–4.0 V) and low 3.3 nC Q_gs support standard 10 V gate drive compatibility.

Key Specifications

Pinout & Package

IRFI820GPBF uses the TO-220 FULLPAK package with electrically isolated metal tab (drain-connected), 3-pin through-hole configuration, and 4.8 mm creepage distance between sink and leads. The molded housing provides 2.5 kV_RMS isolation for 60 s at 60 Hz.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP5NK50ZFP and FQP5N50CTF, the IRFI820GPBF delivers superior thermal performance (4.1 vs. ≥5.5 °C/W), certified isolation eliminating mechanical insulators, and highest UIS energy rating - making it optimal for compact, safety-critical, thermally constrained AC-DC systems.

Availability

IRFI820GPBF is available at Aetrix Electronics and suitable for AC-DC power supplies, LED driver modules, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-authorized channels.

Supply support for IRFI820GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFI820GPBF belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for safety-critical offline power conversion where reinforced insulation, thermal efficiency, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for IRFI820GPBF at 100 °C case temperature?

The IRFI820GPBF has a maximum continuous drain current of 1.3 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures junction temperature remains ≤150 °C under sustained operation. Designers must verify heatsink sizing using the 4.1 °C/W R_thJC value and actual ambient conditions to maintain reliability.

Does IRFI820GPBF require external gate protection?

No, the IRFI820GPBF does not integrate gate Zener protection, but its ±20 V V_GS rating and 100 nA I_GSS leakage at ±20 V allow safe operation with standard gate drivers when layout minimizes ringing. Unlike some alternatives such as STP5NK50ZFP, IRFI820GPBF relies on proper PCB layout and external clamping only if system-level transients exceed 20 V - confirmed by Vishay's recommended gate drive practices in AN956.

Can IRFI820GPBF be used as a direct replacement for IRFI820G?

Yes, IRFI820GPBF is the lead(Pb)-free version of IRFI820G, sharing identical electrical specifications, thermal performance, pinout, and package dimensions. The "PbF" suffix denotes RoHS-compliant termination; all parameters including 500 V V_DS, 3.0 Ω R_DS(on), and 2.5 kV_RMS isolation are unchanged. No redesign or qualification retesting is required when migrating from IRFI820G to IRFI820GPBF.

What is the body diode forward voltage of IRFI820GPBF at 2.1 A and 25 °C?

The body diode forward voltage (V_SD) of IRFI820GPBF is 1.6 V maximum at T_J = 25 °C and I_S = 2.1 A with V_GS = 0 V. This value is critical for evaluating conduction losses during synchronous rectification or freewheeling phases. The diode exhibits typical reverse recovery time of 260–520 ns, necessitating careful snubber design in hard-switched topologies.

How does the TO-220 FULLPAK isolation in IRFI820GPBF compare to standard TO-220?

The TO-220 FULLPAK package in IRFI820GPBF provides 2.5 kV_RMS isolation between drain (tab) and leads for 60 s at 60 Hz - equivalent to a 100 µm mica barrier used with standard TO-220. This eliminates separate insulating hardware, reduces thermal resistance by ~15 %, and achieves 4.8 mm creepage. Standard TO-220 packages lack this integrated isolation and require external barriers to meet reinforced insulation standards.