Vishay Siliconix IRFI9630GPBF

Overview

IRFI9630GPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220 FULLPAK isolated package, rated for -200 V drain-source voltage, 0.80 Ω R_DS(on) at V_GS = -10 V, and 35 W power dissipation at T_C = 25 °C. It delivers rugged unclamped inductive switching with 480 mJ single-pulse avalanche energy and supports high-voltage DC-DC converters and industrial motor controls.

For engineers reviewing the IRFI9630GPBF datasheet, IRFI9630GPBF pinout, IRFI9630GPBF application, or IRFI9630GPBF equivalent, key selection criteria include its 2.5 kV_RMS isolation rating, -5.0 V/ns peak diode recovery dV/dt capability, -4.3 A continuous drain current at 100 °C case temperature, and compatibility with heatsink mounting via single screw or clip-critical for high-reliability power supply and protection circuit design.

Technical Context

This device operates as a high-voltage P-channel switch with gate threshold voltage of -2.0 to -4.0 V and exhibits low thermal resistance (R_thJC = 3.6 °C/W) due to its FULLPAK molding compound, enabling efficient heat transfer from die to heatsink without mica insulation. Its body diode features 200–300 ns reverse recovery time and 2.0–2.9 μC Q_rr, supporting moderate-frequency hard-switched topologies.

The IRFI9630GPBF integrates intrinsic source and drain inductances (L_S = 7.5 nH, L_D = 4.5 nH), and its dynamic parameters-including 29 nC total gate charge, 15 nC Q_gd, and 12 ns turn-on delay-define switching behavior under V_DD = -100 V, I_D = -6.5 A, and R_G = 12 Ω conditions per Fig. 10.

Key Specifications

Pinout & Package

IRFI9630GPBF uses the TO-220 FULLPAK package: isolated plastic housing with metal tab (drain) thermally and electrically connected to internal die, and three leads-Source (S), Gate (G), Drain (D)-arranged in standard TO-220 footprint but with reinforced creepage (4.8 mm sink-to-lead) and 2.5 kV_RMS isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Compared with STP20PF06 and IXTP10P20P, the IRFI9630GPBF uniquely combines -200 V rating, 0.80 Ω on-resistance, and factory-certified 2.5 kV_RMS isolation in a single TO-220 FULLPAK package-enabling simplified, compliant designs in industrial power systems where both voltage headroom and safety insulation are mandatory.

Availability

IRFI9630GPBF is available at Aetrix Electronics and suitable for industrial DC-DC converters, high-voltage power supplies, and motor drive protection circuits requiring stable component supply and long-term lifecycle assurance.

Supply support for IRFI9630GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The IRFI9630GPBF belongs to Vishay's high-voltage isolated power MOSFET product line, engineered specifically for safety-critical and high-isolation industrial power conversion where regulatory compliance, thermal efficiency, and ruggedness are non-negotiable.

FAQ

What is the maximum continuous drain current for IRFI9630GPBF at 100 °C case temperature?

The IRFI9630GPBF supports -2.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220 FULLPAK package and must be applied in thermal design calculations alongside R_thJC = 3.6 °C/W to ensure junction temperature remains ≤150 °C under sustained load.

Does IRFI9630GPBF require external insulation when mounted to a heatsink?

No-IRFI9630GPBF does not require external insulation when mounted to a heatsink because its TO-220 FULLPAK package provides built-in 2.5 kV_RMS isolation and 4.8 mm creepage distance. The molded compound eliminates the need for mica washers or silicone pads, simplifying mechanical assembly while maintaining safety compliance.

What is the gate threshold voltage range for IRFI9630GPBF, and how does it affect drive circuit design?

The IRFI9630GPBF has a gate threshold voltage range of -2.0 V to -4.0 V at I_D = 250 μA. This wide V_GS(th) span means gate drive must deliver ≥-10 V to guarantee full enhancement across process and temperature extremes. Logic-level controllers alone are insufficient; a dedicated negative-bias gate driver or level-shifting circuit is required for reliable turn-on.

Can IRFI9630GPBF be used in avalanche mode for energy clamping, and what is its rated capability?

Yes-IRFI9630GPBF is rated for repetitive and single-pulse avalanche operation. It guarantees 480 mJ single-pulse avalanche energy (E_AS) and 3.5 mJ repetitive avalanche energy (E_AR). These values are validated per test condition b (V_DD = -50 V, L = 38 mH, I_AS = -4.3 A) and enable use in unclamped inductive switching applications like flyback snubbers and relay coil suppression.

What are the key thermal resistance values for IRFI9630GPBF, and how do they impact heatsink selection?

IRFI9630GPBF specifies R_thJC = 3.6 °C/W (junction-to-case) and R_thJA = 65 °C/W (junction-to-ambient). Since the tab is the drain and primary thermal path, heatsink design must prioritize low R_thCS (case-to-sink) using thermal paste and proper mounting pressure. For 35 W dissipation at T_C = 25 °C, the heatsink must maintain ≤25 °C/W total R_thSA to keep T_J ≤150 °C.