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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIB8N50K

Name: IRFIB8N50K
Brand: Vishay Siliconix
SKU: IRFIB8N50K
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIB8N50K

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIB8N50K.pdf

Description:: MOSFET N-CH 500V 6.7A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFIB8N50K from Infineon Technologies (formerly International Rectifier) is a 500V, 6.7A N-channel enhancement-mode power MOSFET in TO-220 Full-Pak package, designed for high-speed switching in offline SMPS and UPS systems. It features 290 mΩ R_DS(on) at V_GS = 10 V, 89 nC total gate charge, and 290 mJ single-pulse avalanche energy.

For engineers reviewing the IRFIB8N50K datasheet, IRFIB8N50K pinout, IRFIB8N50K application, or IRFIB8N50K equivalent, key selection criteria include its 500V V_DSS, low Q_g/Q_gd ratio for reduced drive complexity, rugged dv/dt capability (17 V/ns), and validated unclamped inductive switching performance up to 6.7A.

Technical Context

The IRFIB8N50K employs planar HEXFET technology optimized for hard-switched flyback and forward converters operating at 50–100 kHz. Its 2.76 °C/W R_θJC enables 27 W continuous dissipation at T_C = 25°C, while characterized C_oss (120 pF effective) and C_rss (27 pF) support predictable snubber design and EMI control.

It integrates a robust body diode with 430–640 ns reverse recovery time and 2840–4270 nC Q_rr, enabling reliable operation in synchronous rectification and freewheeling roles where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands full mains-referenced DC bus voltages in universal-input offline SMPS.
R_DS(on) typ.	290 mΩ @ V_GS = 10 V - Enables <2.7 W conduction loss at 6.7 A DC, reducing heatsink requirements.
Q_g	89 nC - Low gate drive energy allows use with standard PWM ICs without external buffer stages.
E_AS	290 mJ - Supports robust unclamped inductive switching in transformer-coupled topologies.
t_r/t_f	16 ns / 8.4 ns - Fast edge rates minimize switching transition losses in high-frequency designs.
R_θJC	2.76 °C/W - Allows direct mounting to heatsinks for thermally constrained industrial enclosures.
I_D @ T_C = 100°C	4.2 A - Specifies usable current derating in compact, sealed power supplies.

Pinout & Package

TO-220 Full-Pak package with isolated tab (Drain-connected), non-insulated mounting surface, and 3-pin vertical lead frame. Not suitable for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control terminal requiring <89 nC charge for full enhancement; sensitive to ESD.
2 (Tab/Case)	Drain	Internally connected to metal tab; electrically active and thermally conductive-requires isolation from heatsink unless referenced to high-side potential.
3 (Lead)	Source	Power return path and reference for gate drive; carries full load current and body diode reverse recovery charge.

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	89 nC total / 44 nC Miller charge - Reduces gate drive loop sensitivity to parasitic oscillation during turn-off.
Characterized C_{oss eff.}	120 pF from 0–400 V - Enables accurate calculation of capacitive turn-on loss and snubber sizing.
Avalanche-rated	290 mJ single-pulse E_AS - Eliminates need for external clamping in cost-sensitive flyback transformer reset circuits.
Body diode Q_rr	2840–4270 nC - Predictable reverse recovery behavior supports stable operation in discontinuous conduction mode (DCM) PFC stages.
dv/dt ruggedness	17 V/ns - Maintains channel integrity during fast voltage transients common in high-frequency LLC resonant converters.

Applications

Offline AC-DC Adapters	Uninterruptible Power Supplies (UPS)
Use Scenario: 65–150 W universal-input flyback converter powering consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer across isolation barrier. Use Value: 290 mΩ R_DS(on) and 89 nC Q_g enable >85% efficiency at 115 VAC input without active cooling.	Use Scenario: Line-interactive UPS with boost/buck inverter stage handling 500–1000 VA loads. IC Role / Device Role / Timing Role: High-side switching element in half-bridge inverter driving transformer-coupled output stage. Use Value: 500 V V_DSS and 290 mJ E_AS tolerate grid surges and battery overvoltage events without failure.
Industrial SMPS	DC-DC Isolated Converters
Use Scenario: 24 V/48 V input industrial power supply delivering 12 V/5 V outputs via forward topology. IC Role / Device Role / Timing Role: Main power switch synchronizing with transformer reset winding and output rectifier timing. Use Value: 2.76 °C/W R_θJC allows 27 W dissipation on standard extruded heatsink, supporting fanless operation.	Use Scenario: Isolated 48 V–12 V DC-DC module for telecom equipment using active clamp forward architecture. IC Role / Device Role / Timing Role: Clamp switch managing transformer leakage energy and enabling zero-voltage switching (ZVS). Use Value: Low C_rss (27 pF) and fast t_f (8.4 ns) reduce clamp loss and improve ZVS window stability.

Offline AC-DC Adapters

Uninterruptible Power Supplies (UPS)

Use Scenario: 65–150 W universal-input flyback converter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer across isolation barrier.

Use Value: 290 mΩ R_DS(on) and 89 nC Q_g enable >85% efficiency at 115 VAC input without active cooling.

Use Scenario: Line-interactive UPS with boost/buck inverter stage handling 500–1000 VA loads.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge inverter driving transformer-coupled output stage.

Use Value: 500 V V_DSS and 290 mJ E_AS tolerate grid surges and battery overvoltage events without failure.

Industrial SMPS

DC-DC Isolated Converters

Use Scenario: 24 V/48 V input industrial power supply delivering 12 V/5 V outputs via forward topology.

IC Role / Device Role / Timing Role: Main power switch synchronizing with transformer reset winding and output rectifier timing.

Use Value: 2.76 °C/W R_θJC allows 27 W dissipation on standard extruded heatsink, supporting fanless operation.

Use Scenario: Isolated 48 V–12 V DC-DC module for telecom equipment using active clamp forward architecture.

IC Role / Device Role / Timing Role: Clamp switch managing transformer leakage energy and enabling zero-voltage switching (ZVS).

Use Value: Low C_rss (27 pF) and fast t_f (8.4 ns) reduce clamp loss and improve ZVS window stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, 1.2 Ω R_DS(on), 30 nC Q_g, TO-220FP package with insulated tab	Lower current rating and higher R_DS(on); better suited for lower-power (<30 W) adapters with tighter gate drive constraints	Select when gate drive capability is limited and thermal interface requires electrical isolation from heatsink.
FQP5N50C	500 V, 5.0 A, 1.2 Ω R_DS(on), 32 nC Q_g, TO-220 package (non-Full-Pak)	Higher R_DS(on) and lower I_D; lacks Full-Pak's enhanced thermal path and avalanche characterization	Choose for cost-sensitive designs where 290 mΩ performance and 290 mJ E_AS are not required.

Compared with STP5NK50ZFP and FQP5N50C, the IRFIB8N50K delivers superior conduction efficiency (290 mΩ vs ≥1.2 Ω) and proven avalanche robustness (290 mJ), making it preferred for 6.7 A, 500 V hard-switched industrial and UPS applications where reliability under transient stress is critical.

Availability

IRFIB8N50K is available at Aetrix Electronics and suitable for offline AC-DC adapters, uninterruptible power supplies (UPS), and industrial switch-mode power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRFIB8N50K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, headquartered in Munich, Germany.

The IRFIB8N50K belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered for high-reliability, high-voltage switching in industrial-grade offline power conversion systems.

FAQ

What is the maximum continuous drain current for IRFIB8N50K at 100°C case temperature?

The IRFIB8N50K supports 4.2 A continuous drain current at T_C = 100°C with V_GS = 10 V. This derated value reflects thermal limitations of the TO-220 Full-Pak package and ensures safe operation within its 150°C maximum junction temperature specification. Designers must verify heatsink sizing using the 2.76 °C/W R_θJC value to maintain this current rating in real-world conditions.

Does IRFIB8N50K have an electrically isolated tab?

No, the IRFIB8N50K TO-220 Full-Pak package has a non-isolated metal tab directly connected to the Drain terminal. Mounting to a heatsink requires electrical isolation (e.g., mica washer + thermal grease) unless the heatsink is referenced to the high-voltage DC bus. This differs from insulated-tab variants like STP5NK50ZFP.

What is the typical reverse recovery charge (Q_rr) of the body diode in IRFIB8N50K?

The IRFIB8N50K body diode exhibits a typical reverse recovery charge (Q_rr) of 2840 nC, with a maximum of 4270 nC under test conditions of T_J = 25°C, I_F = 6.7 A, and di/dt = 100 A/µs. This value is critical for estimating commutation losses in quasi-resonant and DCM topologies where the body diode conducts during dead time.

Can IRFIB8N50K be used in synchronous rectification applications?

The IRFIB8N50K is not optimized for synchronous rectification due to its relatively high R_DS(on) (290 mΩ) and slow body diode (t_rr = 430–640 ns). For synchronous rectification, devices with lower R_DS(on), faster Q_rr, and dedicated logic-level gate thresholds are preferred. The IRFIB8N50K is best applied as a primary-side switch, not a secondary-side rectifier.

What is the gate threshold voltage range for IRFIB8N50K?

The IRFIB8N50K has a gate threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V, specified at V_DS = V_GS and I_D = 250 µA. This range confirms enhancement-mode operation and indicates that reliable turn-on requires V_GS ≥ 10 V to achieve the rated 6.7 A current and 290 mΩ R_DS(on).

IRFIB8N50K Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIB8N50K FAQ

1.How can I place an order for IRFIB8N50K through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIB8N50K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIB8N50K reliable?

The price and inventory of IRFIB8N50K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIB8N50K is usually 5 days.

3.What payment methods are accepted for IRFIB8N50K?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIB8N50K transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIB8N50K?

IRFIB8N50K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIB8N50K order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIB8N50K?

For technical support, including IRFIB8N50K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIB8N50K requirements.

6.How does Aetrix verify that IRFIB8N50K is sourced from the original manufacturer or authorized distributors?

All IRFIB8N50K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIB8N50K meets industry standards.

7.What is the process for return or replacement of IRFIB8N50K?

All IRFIB8N50K units undergo pre-shipment inspection (PSI). If there is an issue with IRFIB8N50K, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIB8N50K part is unused and in its original packaging.

Return procedure for IRFIB8N50K:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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