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Vishay Siliconix IRFIBC40GPBF

Part No.:
IRFIBC40GPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
AetrixIRFIBC40GPBF.pdf
Description:
MOSFET N-CH 600V 3.5A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,362

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Product details

Overview

IRFIBC40GPbF from Vishay Siliconix is a 600 V, 3.5 A N-channel power MOSFET in TO-220 FULLPAK package with 1.2 Ω RDS(on) at VGS = 10 V, 60 nC total gate charge, and 2.5 kVRMS isolation rating-designed for high-voltage DC-DC converters and industrial motor control where creepage distance and thermal performance are critical.

For engineers reviewing the IRFIBC40GPbF datasheet, IRFIBC40GPbF pinout, IRFIBC40GPbF application, or IRFIBC40GPbF equivalent, this device's isolated package, avalanche energy rating (500 mJ), dV/dt immunity (3.0 V/ns), and sink-to-lead creepage (4.8 mm) are key selection criteria for safety-critical switching designs.

Technical Context

This third-generation high-voltage MOSFET features an integrated body diode with 470–940 ns reverse recovery time and 4.0–7.9 μC Qrr, enabling robust unclamped inductive switching. Its isolated TO-220 FULLPAK construction eliminates external insulation hardware while delivering 3.1 °C/W junction-to-case thermal resistance.

The device supports repetitive avalanche operation up to 3.5 A and 4.0 mJ, with dynamic dV/dt capability rated at 3.0 V/ns under specified test conditions. Gate threshold voltage ranges from 2.0 V to 4.0 V, ensuring stable turn-on across temperature and process variation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Withstands DC bus voltages up to 480 V at 125 °C, suitable for 400 V nominal input systems
RDS(on) 1.2 Ω max at VGS = 10 V, ID = 2.1 A - Enables low conduction loss in medium-current switch-mode topologies
Qg 60 nC max - Determines gate drive power requirement and switching speed in hard-switched applications
EAS 500 mJ single-pulse - Supports reliable operation under unclamped inductive load transients without snubbers
RthJC 3.1 °C/W max - Allows direct mounting to heatsink with minimal thermal interface resistance for 40 W dissipation
dV/dt 3.0 V/ns peak diode recovery - Resists false triggering during fast voltage transitions in bridge configurations
VGS(th) 2.0–4.0 V - Ensures clean turn-on with standard 10 V gate drivers and margin against noise-induced conduction

Pinout & Package

IRFIBC40GPbF uses the TO-220 FULLPAK package: isolated plastic housing with metal tab (drain) electrically insulated from leads, 4.8 mm sink-to-lead creepage, and 2.5 kVRMS isolation per 60 s at 60 Hz. Dimensions conform to Vishay Document 91359 (Option 1 or 2).

Pin/Terminal Circuit Role Design Meaning
Lead 1 (left) Source (S) Low-side reference node; connects to PCB ground plane or source return path
Lead 2 (center) Gate (G) Control input; requires <100 nA leakage current handling and 60 nC drive capacity
Lead 3 (right) Drain (D) High-voltage power node; internally connected to insulated metal tab for heatsinking

Key Features

Feature Design Value
Isolated TO-220 FULLPAK Eliminates need for mica washers or insulating pads-reduces assembly cost and thermal interface resistance
2.5 kVRMS isolation Meets reinforced insulation requirements for industrial AC/DC and DC/DC power supplies per IEC 62368-1
4.8 mm sink-to-lead creepage Supports ≥400 V working voltage in pollution degree 2 environments without slotting or coating
Low RthJC (3.1 °C/W) Enables 40 W continuous power dissipation with modest heatsink surface area and natural convection cooling
Avalanche-rated (500 mJ) Permits safe operation in flyback, resonant, and motor drive circuits without external clamping components

Applications

Industrial Motor Drives AC-DC Power Supplies

Use Scenario: Half-bridge switching in 3-phase BLDC motor controllers operating from 300–400 V DC bus.

IC Role / Device Role / Timing Role: High-side or low-side power switch managing phase current commutation with 3.5 A RMS load current.

Use Value: Avalanche energy rating absorbs inductive kickback during PWM dead-time; isolated package simplifies heatsink grounding.

Use Scenario: Primary-side switch in offline flyback converters delivering ≤60 W output with universal AC input.

IC Role / Device Role / Timing Role: Main power switch turning on/off at 65–130 kHz with 600 V blocking capability.

Use Value: 1.2 Ω RDS(on) minimizes conduction loss at partial load; 3.0 V/ns dV/dt rating prevents spurious turn-on.

DC-DC Converters Lighting Ballasts

Use Scenario: High-voltage buck or forward converter in telecom rectifier modules with 380–400 V input.

IC Role / Device Role / Timing Role: Primary switch handling 3.5 A continuous drain current and 14 A pulsed current.

Use Value: TO-220 FULLPAK isolation enables direct heatsink mounting without insulation hardware, reducing thermal impedance by ~20% vs. standard TO-220.

Use Scenario: Electronic ballast for HID lamps requiring high-voltage ignition pulses and sustained arc regulation.

IC Role / Device Role / Timing Role: Switch controlling resonant tank current during lamp warm-up and steady-state operation.

Use Value: 470–940 ns body diode trr and 7.9 μC Qrr ensure clean zero-voltage switching transitions in series-resonant topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP6NK60ZFP 600 V, 5.5 A, RDS(on) = 1.2 Ω, Zener-protected gate, but no isolation rating or creepage specification Requires external insulation hardware for heatsink mounting; not certified for reinforced insulation Prefer when higher continuous current is needed and isolation is handled at board level
FQP6N60C 600 V, 5.4 A, RDS(on) = 1.3 Ω, standard TO-220 (non-isolated), lower Qg (42 nC) Lacks 2.5 kVRMS isolation and 4.8 mm creepage; unsuitable for safety-critical mains-connected designs Select when cost sensitivity outweighs isolation requirements and thermal design allows non-isolated mounting

Compared with STP6NK60ZFP and FQP6N60C, the IRFIBC40GPbF uniquely delivers certified high-voltage isolation in a drop-in TO-220 footprint-enabling simplified compliance with IEC 62368-1 while maintaining competitive RDS(on) and avalanche ruggedness.

Availability

IRFIBC40GPbF is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, and DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-certified designs.

Supply support for IRFIBC40GPbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The IRFIBC40GPbF belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for safety-critical switching in mains-connected equipment where creepage, isolation, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current for IRFIBC40GPbF at 100 °C case temperature?

The IRFIBC40GPbF supports 2.2 A continuous drain current at TC = 100 °C, derated linearly from 3.5 A at 25 °C using a 0.32 W/°C factor. This rating assumes proper heatsinking and accounts for junction temperature limits of 150 °C. The IRFIBC40GPbF datasheet specifies these values in the Absolute Maximum Ratings table under "Continuous drain current".

Does IRFIBC40GPbF have a built-in body diode, and what are its key parameters?

Yes, the IRFIBC40GPbF integrates a body diode with typical forward voltage of 1.5 V at 3.5 A and 25 °C, reverse recovery time of 470–940 ns, and reverse recovery charge of 4.0–7.9 μC. These values are measured under standardized conditions (TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs) and directly impact performance in freewheeling and resonant applications. The IRFIBC40GPbF body diode characteristics are detailed in the "Drain-Source Body Diode Characteristics" section of the datasheet.

Can IRFIBC40GPbF be used as a direct replacement for standard TO-220 MOSFETs without layout changes?

No-while the IRFIBC40GPbF shares the same outline dimensions as standard TO-220, its TO-220 FULLPAK variant features an electrically isolated metal tab. This allows direct heatsink mounting without insulating hardware, but requires verification that the PCB pad layout accommodates the internal isolation structure and creepage requirements. The IRFIBC40GPbF must not be substituted for non-isolated TO-220 devices in safety-critical designs without re-evaluation of insulation coordination.

What is the gate-source voltage limit for IRFIBC40GPbF, and why is it important?

The IRFIBC40GPbF has a gate-source voltage limit of ±20 V, beyond which permanent gate oxide damage may occur. Operating within this range ensures reliable threshold stability and avoids gate leakage increase or catastrophic failure. Drive circuits must clamp transients and avoid overshoot-especially during paralleling or high-dI/dt switching. This specification is explicitly defined in the Absolute Maximum Ratings table of the IRFIBC40GPbF datasheet.

How does the 2.5 kVRMS isolation rating of IRFIBC40GPbF impact system-level safety certification?

The 2.5 kVRMS isolation rating (60 s, 60 Hz) of the IRFIBC40GPbF satisfies reinforced insulation requirements for basic functional isolation in many industrial power systems per IEC 62368-1 and IEC 61800-5-1. It reduces reliance on external barriers and simplifies creepage/clearance validation-but full system certification still requires evaluation of PCB layout, heatsink grounding, and enclosure design. The IRFIBC40GPbF isolation performance is verified per Vishay's internal test protocol documented in S21-0976.

IRFIBC40GPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

IRFIBC40GPBF FAQ

1.How can I place an order for IRFIBC40GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIBC40GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIBC40GPBF reliable?

The price and inventory of IRFIBC40GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIBC40GPBF is usually 5 days.

3.What payment methods are accepted for IRFIBC40GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIBC40GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIBC40GPBF?

IRFIBC40GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIBC40GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIBC40GPBF?

For technical support, including IRFIBC40GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIBC40GPBF requirements.

6.How does Aetrix verify that IRFIBC40GPBF is sourced from the original manufacturer or authorized distributors?

All IRFIBC40GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIBC40GPBF meets industry standards.

7.What is the process for return or replacement of IRFIBC40GPBF?

All IRFIBC40GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIBC40GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIBC40GPBF part is unused and in its original packaging.

Return procedure for IRFIBC40GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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