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Vishay Siliconix IRFIBF30GPBF
- Part No.:
- IRFIBF30GPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFIBF30GPBF.pdf
- Description:
- MOSFET N-CH 900V 1.9A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:888
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Product details
Overview
IRFIBF30GPBF from Vishay Siliconix is a 900 V, 1.9 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, RDS(on) = 3.7 Ω at VGS = 10 V, Qg = 78 nC, and 2.5 kVRMS isolation rating - designed for high-voltage flyback, AC-DC adapters, and offline SMPS primary-side switching.
For engineers reviewing the IRFIBF30GPBF datasheet, IRFIBF30GPBF pinout, IRFIBF30GPBF application, or IRFIBF30GPBF equivalent, this device requires attention to its isolated thermal path, avalanche ruggedness (EAS = 220 mJ), dV/dt immunity (1.5 V/ns), and gate charge profile for hard-switched high-voltage topologies.
Technical Context
This third-generation high-voltage MOSFET uses planar stripe cell structure and optimized gate oxide for stable threshold voltage (VGS(th) = 2.0–4.0 V) and low temperature coefficient of breakdown voltage (ΔVDS/TJ = 1.1 V/°C). Its isolated TO-220 FULLPAK package integrates a molded insulating barrier equivalent to a 100 µm mica sheet.
The device supports unclamped inductive switching with repetitive avalanche current IAR = 1.9 A and features low internal source/drain inductance (LS = 7.5 nH, LD = 4.5 nH), enabling clean turn-on/turn-off waveforms under high dI/dt conditions (≤70 A/µs).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 900 V - supports 650 V AC mains designs with ≥30 % safety margin and withstands transient surges up to 720 V at 125 °C. |
| RDS(on) | 3.7 Ω @ VGS = 10 V - sets conduction loss floor in 1–2 W output flyback converters operating below 100 kHz. |
| Qg | 78 nC - determines gate drive power requirement and switching speed trade-off in hard-switched topologies. |
| EAS | 220 mJ - enables robust single-pulse energy handling during output short-circuit or startup fault events. |
| dV/dt Rating | 1.5 V/ns - suppresses false turn-on in high-noise, high-dV/dt environments like PFC boost stages or half-bridge legs. |
| RthJC | 3.6 °C/W - allows direct mounting to heatsink without insulator, delivering 35 W dissipation at TC = 25 °C. |
| VSD | 1.8 V @ IS = 1.9 A - defines forward drop and power loss in body diode conduction during ZVS transitions or synchronous rectification fallback. |
Pinout & Package
IRFIBF30GPBF uses the TO-220 FULLPAK package: isolated metal tab (drain-connected), 3-pin through-hole outline with 2.54 mm lead pitch, 15.87 mm length, and 10.1 mm width. The molded compound provides 4.8 mm creepage between sink and leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; input capacitance Ciss = 1200 pF shapes Miller plateau timing and gate resistor selection. |
| D (Drain) | High-side power terminal | Connected to isolated tab; carries full HV DC bus current and must be thermally coupled to heatsink without electrical isolation hardware. |
| S (Source) | Reference node / return path | Serves as local ground reference for gate drive; internal source inductance LS = 7.5 nH impacts switching waveform ringing and layout sensitivity. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated package construction | 2.5 kVRMS isolation (60 s, 60 Hz) eliminates need for mica washers or silicone pads in commercial-industrial heatsink mounting. |
| High-voltage avalanche ruggedness | Repetitive EAR = 3.5 mJ and IAR = 1.9 A enable reliable operation in unclamped inductive loads without external snubbers. |
| Low thermal resistance | RthJC = 3.6 °C/W allows >30 W continuous dissipation with modest heatsinking - critical for compact offline adapters. |
| Controlled body diode recovery | trr = 430–650 ns and Qrr = 1.4–2.1 µC reduce switching loss and EMI in quasi-resonant flyback and LLC secondary-side rectification. |
| Dynamic dV/dt immunity | Rated 1.5 V/ns ensures gate remains off during fast drain transients - essential for primary-side switching in noisy high-frequency SMPS. |
Applications
| AC-DC Adapter Primary Switch | Industrial Flyback Power Supply |
|---|---|
Use Scenario: 12–24 W universal-input (85–265 VAC) adapter for industrial sensors and IoT gateways. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback topology. Use Value: 900 V rating accommodates line surges and derating margins; isolated tab simplifies mechanical assembly and reduces BOM count by eliminating insulation hardware. |
Use Scenario: 36 W open-frame flyback supply for PLC I/O modules with extended temperature range (-40 to +85 °C ambient). IC Role / Device Role / Timing Role: Main power switch handling 400 V DC bus with tight thermal constraints on PCB-mounted heatsink. Use Value: RthJC = 3.6 °C/W enables stable operation at full load without forced air; avalanche rating protects against transformer leakage inductance spikes. |
| Offline LED Driver | Capacitor-Input Rectifier Stage |
Use Scenario: Non-isolated buck-derived LED driver for streetlight retrofit with 90–305 VAC input. IC Role / Device Role / Timing Role: High-side switch controlling constant-current regulation via primary-side sensing. Use Value: Low Qgd/Qg ratio (42/78 nC) improves controllability during PWM dimming; VGS(th) tolerance ensures consistent turn-on across temperature. |
Use Scenario: Inrush current limiting and hold-up capacitor charging in high-reliability UPS front-end stage. IC Role / Device Role / Timing Role: Soft-start controlled switch placed between bridge rectifier and bulk capacitor bank. Use Value: Body diode VSD = 1.8 V limits conduction loss during pre-charge; dV/dt immunity prevents spurious turn-on during capacitor voltage ramp. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK90ZFP | 900 V, RDS(on) = 3.3 Ω, Qg = 65 nC, non-isolated TO-220FP package | Requires external isolation hardware; lower gate charge improves efficiency but increases layout complexity for isolation. | Preferred where board space permits added insulator and thermal performance outweighs assembly cost. |
| FQP9N90C | 900 V, RDS(on) = 3.5 Ω, Qg = 85 nC, standard TO-220 (non-isolated) | No integrated isolation; higher Qg increases gate drive loss; same avalanche rating (EAS = 220 mJ). | Selected when legacy footprint compatibility is required and isolation can be implemented externally. |
Compared with STP9NK90ZFP and FQP9N90C, the IRFIBF30GPBF uniquely delivers factory-integrated 2.5 kVRMS isolation in TO-220 form factor - reducing bill-of-materials, assembly steps, and long-term reliability risk from insulator aging or misalignment.
Availability
IRFIBF30GPBF is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback supplies, and offline LED drivers requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.
Supply support for IRFIBF30GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFIBF30GPBF belongs to Vishay's high-voltage power MOSFET family engineered for ruggedized offline switching - emphasizing isolation integrity, avalanche survivability, and thermal performance in space-constrained power supplies.
FAQ
What is the maximum continuous drain current for IRFIBF30GPBF at 100 °C case temperature?
The IRFIBF30GPBF supports 1.2 A continuous drain current at TC = 100 °C, derated linearly from 1.9 A at 25 °C using a 0.28 W/°C factor. This rating assumes proper heatsinking and accounts for RDS(on) increase with junction temperature - critical for thermal design validation in enclosed adapters.
Does IRFIBF30GPBF require an external gate resistor, and what value is recommended?
Yes, IRFIBF30GPBF requires an external gate resistor to control dI/dt and suppress oscillation. Based on Qg = 78 nC and typical 12 V gate drive, a 12–25 Ω resistor balances switching speed and EMI - confirmed in the datasheet's fig. 10 and 12 test circuits using Rg = 25 Ω for unclamped inductive testing.
Can IRFIBF30GPBF be used in place of a standard TO-220 MOSFET without layout changes?
No - IRFIBF30GPBF uses the TO-220 FULLPAK package with an isolated drain tab, requiring mechanical redesign to accommodate direct heatsink mounting without insulators. Pinout matches standard TO-220 (G-D-S), but thermal pad orientation and creepage clearance differ; PCB footprint must verify G-D-S alignment and tab isolation zone.
What is the body diode reverse recovery charge (Qrr) specification for IRFIBF30GPBF?
The IRFIBF30GPBF has Qrr = 1.4–2.1 µC under test conditions of TJ = 25 °C, IF = 3.6 A, and dI/dt = 100 A/µs. This parameter directly impacts turn-off loss and EMI in quasi-resonant topologies - designers should include it in total switching loss calculations alongside Qg and VDS.
Is IRFIBF30GPBF RoHS-compliant and halogen-free?
Yes, IRFIBF30GPBF is RoHS-compliant and halogen-free per Vishay's material categorization standard (document 99912). The "PbF" suffix confirms lead-free termination, and the molding compound meets IEC 61249-2-21 requirements - verified in the product summary and compliance notes of datasheet 91186.
IRFIBF30GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 78 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFIBF30GPBF FAQ
1.How can I place an order for IRFIBF30GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFIBF30GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFIBF30GPBF reliable?
The price and inventory of IRFIBF30GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIBF30GPBF is usually 5 days.
3.What payment methods are accepted for IRFIBF30GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIBF30GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFIBF30GPBF?
IRFIBF30GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFIBF30GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFIBF30GPBF?
For technical support, including IRFIBF30GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIBF30GPBF requirements.
6.How does Aetrix verify that IRFIBF30GPBF is sourced from the original manufacturer or authorized distributors?
All IRFIBF30GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIBF30GPBF meets industry standards.
7.What is the process for return or replacement of IRFIBF30GPBF?
All IRFIBF30GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIBF30GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFIBF30GPBF part is unused and in its original packaging.
Return procedure for IRFIBF30GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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