Vishay Siliconix IRFIZ14G

Overview

IRFIZ14G from Vishay Siliconix is a 60 V, 8.0 A N-channel power MOSFET in TO-220 FULLPAK package, featuring 0.20 Ω R_DS(on) at V_GS = 10 V, 2.5 kV_RMS isolation rating, and 175 °C maximum junction temperature - designed for isolated high-voltage switching in industrial power supplies and motor control circuits.

For engineers reviewing the IRFIZ14G datasheet, IRFIZ14G pinout, IRFIZ14G application, or IRFIZ14G equivalent, this device is selected for its integrated high-voltage isolation, low thermal resistance (R_thJC = 5.5 °C/W), and robust avalanche energy rating (E_AS = 47 mJ), enabling simplified heatsink mounting without external insulation in commercial-industrial systems.

Technical Context

The IRFIZ14G employs a third-generation silicon process optimized for fast switching and ruggedized operation under repetitive avalanche stress. Its TO-220 FULLPAK construction integrates molded isolation equivalent to a 100 µm mica barrier, eliminating need for insulating hardware while maintaining 4.8 mm sink-to-lead creepage distance.

It delivers dynamic performance with 11 nC total gate charge, 5.8 nC gate-drain charge, and 4.5 V/ns peak diode recovery dV/dt capability. The body diode exhibits 70–140 ns reverse recovery time (trr) and 0.20–0.40 µC Qrr at TJ = 25 °C, supporting moderate-frequency hard-switched topologies.

Key Specifications

Pinout & Package

IRFIZ14G is housed in a TO-220 FULLPAK package with isolated tab (drain-connected), offering 2.5 kV_RMS isolation and 4.8 mm creepage distance. The molded compound provides low thermal resistance and eliminates need for insulating washers or pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IXTP10N60P, the IRFIZ14G uniquely balances 60 V rating, 8 A current, certified 2.5 kV_RMS isolation, and low 11 nC gate charge - making it optimal for space- and safety-critical 24–48 V industrial switching where isolation and thermal simplicity are prioritized over raw current or voltage headroom.

Availability

IRFIZ14G is available at Aetrix Electronics and suitable for industrial power supplies, motor control drivers, relay replacement circuits, and solenoid load switches requiring stable component supply and certified high-voltage isolation.

Supply support for IRFIZ14G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRFIZ14G belongs to Vishay's third-generation high-voltage isolated MOSFET family, engineered specifically for commercial-industrial applications demanding simplified thermal mounting and certified isolation without added hardware.

FAQ

What is the maximum continuous drain current for IRFIZ14G at 100 °C case temperature?

The IRFIZ14G supports 5.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be verified against actual heatsink performance and ambient conditions in the final design. The IRFIZ14G maintains safe operation up to 175 °C junction temperature under these conditions.

Does IRFIZ14G require external insulation when mounted to a heatsink?

No, the IRFIZ14G does not require external insulation when mounted to a heatsink because its TO-220 FULLPAK package provides certified 2.5 kV_RMS isolation between drain (tab) and leads, with 4.8 mm creepage distance. This eliminates the need for mica washers or insulating pads typically required with standard TO-220 devices - a key feature confirmed in the product description and ordering information for IRFIZ14G.

What is the gate threshold voltage range for IRFIZ14G, and how does it affect drive requirements?

The IRFIZ14G has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at ID = 250 µA, ensuring reliable turn-on with standard 10 V gate drivers while providing noise immunity against false triggering. This V_GS(th) specification means the IRFIZ14G is not a logic-level device and requires ≥5 V gate drive for partial conduction, with full enhancement achieved at V_GS = 10 V per the R_DS(on) test condition.

Can IRFIZ14G be used in avalanche-mode switching applications?

Yes, the IRFIZ14G is rated for single-pulse avalanche energy (E_AS) of 47 mJ under defined test conditions (V_DD = 25 V, L = 1.47 mH, I_AS = 8.0 A), making it suitable for controlled unclamped inductive switching in relay replacement and solenoid drive circuits. However, repetitive avalanche operation is not guaranteed and must be validated per application constraints - a key limitation explicitly noted in the IRFIZ14G datasheet.

What is the thermal resistance from junction to case (R_thJC) for IRFIZ14G, and why is it important?

The IRFIZ14G has a maximum junction-to-case thermal resistance (R_thJC) of 5.5 °C/W, measured from die to drain tab. This low value enables efficient heat transfer to external heatsinks using simple mechanical mounting (single M3 screw or clip), reducing thermal interface complexity and improving long-term reliability. For thermal design, this R_thJC value must be combined with heatsink R_thCA to calculate total junction-to-ambient resistance - a critical parameter in the IRFIZ14G thermal performance analysis.