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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIZ44G

Name: IRFIZ44G
Brand: Vishay Siliconix
SKU: IRFIZ44G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIZ44G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIZ44G.pdf

Description:: MOSFET N-CH 60V 30A TO220-3

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Product details

Overview

IRFIZ44G from Vishay Siliconix is a 60 V, 30 A N-channel power MOSFET in TO-220 FULLPAK package with 0.028 Ω R_DS(on) at V_GS = 10 V, 95 nC total gate charge, and 2.5 kV_RMS isolation rating - designed for high-reliability DC-DC converters, motor drivers, and industrial power switches operating up to 175 °C junction temperature.

For engineers reviewing the IRFIZ44G datasheet, IRFIZ44G pinout, IRFIZ44G application, or IRFIZ44G equivalent, this device is selected for isolated high-current switching where thermal robustness, avalanche energy handling (100 mJ), and creepage distance (4.8 mm) are critical in commercial-industrial power stages.

Technical Context

The IRFIZ44G integrates an intrinsic body diode with 140–300 ns reverse recovery time and 1.2–2.8 μC Q_rr, enabling hard-switched inductive load control without external freewheeling diodes. Its isolated TO-220 FULLPAK construction eliminates need for mica insulators while maintaining 3.1 °C/W junction-to-case thermal resistance.

Dynamic dV/dt rating of 4.5 V/ns and ruggedized third-generation silicon ensure stable operation under fast transient conditions. Gate threshold voltage (2.0–4.0 V) and low input capacitance (2500 pF) support direct drive from standard logic-level controllers without gate buffers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and unregulated industrial rails.
R_DS(on) @ V_GS = 10 V	0.028 Ω - Enables ≤ 15.9 W conduction loss at 30 A continuous drain current (T_C = 25 °C).
Q_g max	95 nC - Determines gate driver power requirement and switching speed in hard-switched topologies.
E_AS	100 mJ - Supports single-pulse unclamped inductive switching up to 30 A without failure.
T_J max	+175 °C - Allows operation in sealed enclosures or high-ambient environments without derating.
Isolation Voltage	2.5 kV_RMS/60 s - Replaces external insulation hardware in AC/DC front-end and isolated DC-DC designs.
R_thJC	3.1 °C/W - Enables efficient heatsink coupling via single-screw mounting, reducing thermal interface complexity.

Pinout & Package

TO-220 FULLPAK package with isolated tab (drain-connected), 3-pin through-hole configuration. Molding compound provides 2.5 kV_RMS isolation between drain and leads; sink-to-lead creepage = 4.8 mm.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; threshold range 2.0–4.0 V ensures compatibility with microcontroller GPIOs.
D (Drain)	High-side power terminal	Internally connected to isolated metal tab; must be mounted to heatsink with electrically insulating interface (no additional mica required).
S (Source)	Power return / reference node	Serves as common return path for load current and gate drive reference; low-inductance layout critical due to LS = 7.5 nH.

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates need for separate insulating hardware - reduces BOM count and assembly steps in industrial power modules.
175 °C maximum junction temperature	Supports operation in sealed, fanless enclosures and high-ambient environments without thermal shutdown.
2.5 kV_RMS isolation rating	Meets reinforced insulation requirements for secondary-side switching in isolated DC-DC converters.
Low R_DS(on) + low Q_g	Enables high-efficiency, high-frequency switching (e.g., >100 kHz) with minimal gate drive loss and conduction loss trade-off.
Body diode with controlled Q_rr	1.2–2.8 μC reverse recovery charge enables predictable snubber design in flyback and half-bridge topologies.

Applications

Motor Drive Stage	DC-DC Secondary Switch
Use Scenario: High-current H-bridge for 24–48 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: N-channel power switch controlling motor phase current; operated in PWM mode at 10–20 kHz. Use Value: 0.028 Ω R_DS(on) minimizes I²R losses during 30 A stall current; 100 mJ E_AS withstands inductive kickback during rapid direction reversal.	Use Scenario: Synchronous rectifier in isolated 48 V → 12 V DC-DC converter for telecom power shelves. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal. Use Value: 2.5 kV_RMS isolation allows direct mounting to primary-referenced heatsink; 3.1 °C/W R_thJC maintains <125 °C T_J at full load.
Industrial Power Supply	Uninterruptible Power System
Use Scenario: Main output switch in 600 W industrial AC/DC power supply with active PFC front-end. IC Role / Device Role / Timing Role: Primary-side switching transistor in LLC resonant half-bridge configuration. Use Value: 4.5 V/ns dV/dt rating prevents false turn-on during high dv/dt transitions; 175 °C T_J rating supports compact heatsink design.	Use Scenario: Battery disconnect and inverter bridge switch in 1 kVA UPS with 24 V lead-acid battery bank. IC Role / Device Role / Timing Role: High-current solid-state relay replacement for battery isolation and inverter output stage. Use Value: Isolated tab enables safe mounting to shared chassis ground; 120 A pulsed current rating handles surge loads during transfer switching.

Motor Drive Stage

DC-DC Secondary Switch

Use Scenario: High-current H-bridge for 24–48 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: N-channel power switch controlling motor phase current; operated in PWM mode at 10–20 kHz.

Use Value: 0.028 Ω R_DS(on) minimizes I²R losses during 30 A stall current; 100 mJ E_AS withstands inductive kickback during rapid direction reversal.

Use Scenario: Synchronous rectifier in isolated 48 V → 12 V DC-DC converter for telecom power shelves.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: 2.5 kV_RMS isolation allows direct mounting to primary-referenced heatsink; 3.1 °C/W R_thJC maintains <125 °C T_J at full load.

Industrial Power Supply

Uninterruptible Power System

Use Scenario: Main output switch in 600 W industrial AC/DC power supply with active PFC front-end.

IC Role / Device Role / Timing Role: Primary-side switching transistor in LLC resonant half-bridge configuration.

Use Value: 4.5 V/ns dV/dt rating prevents false turn-on during high dv/dt transitions; 175 °C T_J rating supports compact heatsink design.

Use Scenario: Battery disconnect and inverter bridge switch in 1 kVA UPS with 24 V lead-acid battery bank.

IC Role / Device Role / Timing Role: High-current solid-state relay replacement for battery isolation and inverter output stage.

Use Value: Isolated tab enables safe mounting to shared chassis ground; 120 A pulsed current rating handles surge loads during transfer switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	60 V, 60 A, R_DS(on) = 0.018 Ω, non-isolated TO-220, no isolation rating	Requires external insulation hardware; higher current but lower thermal margin (T_J max = 150 °C)	Select when higher current and lower R_DS(on) outweigh isolation needs and thermal headroom.
IXTP50N065	65 V, 50 A, R_DS(on) = 0.015 Ω, TO-220 non-isolated, 175 °C rated	Lacks 2.5 kV_RMS isolation and creepage compliance; higher cost per unit	Choose for higher voltage margin and lower on-resistance where board-level isolation is already implemented.

Compared with STP60NF06 and IXTP50N065, the IRFIZ44G trades modest R_DS(on) and current rating for integrated isolation, reduced assembly cost, and extended thermal capability - making it optimal for space-constrained, safety-critical industrial power stages where insulation integrity is non-negotiable.

Availability

IRFIZ44G is available at Aetrix Electronics and suitable for industrial motor drives, isolated DC-DC converters, and uninterruptible power systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRFIZ44G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFIZ44G belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedized switching in commercial-industrial power conversion where isolation, thermal endurance, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current for the IRFIZ44G at 100 °C case temperature?

The IRFIZ44G supports 21 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures reliable operation without exceeding 175 °C maximum junction temperature. The IRFIZ44G maintains stable R_DS(on) performance across this range due to its positive V_DS temperature coefficient.

Does the IRFIZ44G require external insulation when mounted to a heatsink?

No - the IRFIZ44G uses a TO-220 FULLPAK package with integrated 2.5 kV_RMS isolation between the drain-connected tab and leads, eliminating the need for mica washers or silicone pads. Its 4.8 mm sink-to-lead creepage distance meets reinforced insulation requirements, allowing direct screw-mounting to grounded heatsinks in safety-critical applications.

What is the typical body diode reverse recovery time (t_rr) for the IRFIZ44G?

The IRFIZ44G exhibits a typical body diode reverse recovery time of 140 ns at T_J = 25 °C, I_F = 52 A, and dI/dt = 100 A/μs. The datasheet specifies a maximum t_rr of 300 ns under those conditions. This parameter directly impacts switching loss and EMI in hard-commutated topologies, and the IRFIZ44G's controlled Q_rr (1.2–2.8 μC) supports predictable snubber design.

Can the IRFIZ44G be driven directly by a 3.3 V microcontroller GPIO?

No - the IRFIZ44G has a gate threshold voltage range of 2.0–4.0 V and requires 10 V gate drive for full enhancement and minimal R_DS(on). At 3.3 V, the device remains partially enhanced, resulting in excessive conduction loss and thermal instability. A dedicated gate driver (e.g., TC4420) or level-shifting circuit is required to deliver 10 V to the IRFIZ44G gate.

What is the peak diode recovery dV/dt rating for the IRFIZ44G?

The IRFIZ44G is rated for 4.5 V/ns peak diode recovery dV/dt, measured under specified test conditions (ISD ≤ 52 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C). This rating ensures immunity to false turn-on during fast voltage transients across the body diode, a critical parameter in inductive switching applications such as motor control and DC-DC converters.

IRFIZ44G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIZ44G FAQ

1.How can I place an order for IRFIZ44G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIZ44G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIZ44G reliable?

The price and inventory of IRFIZ44G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ44G is usually 5 days.

3.What payment methods are accepted for IRFIZ44G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ44G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIZ44G?

IRFIZ44G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIZ44G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIZ44G?

For technical support, including IRFIZ44G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ44G requirements.

6.How does Aetrix verify that IRFIZ44G is sourced from the original manufacturer or authorized distributors?

All IRFIZ44G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ44G meets industry standards.

7.What is the process for return or replacement of IRFIZ44G?

All IRFIZ44G units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ44G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIZ44G part is unused and in its original packaging.

Return procedure for IRFIZ44G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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