Infineon Technologies IRFIZ44NPBF

Overview

IRFIZ44NPBF from Infineon Technologies (formerly International Rectifier) is a 55V, 31A N-channel enhancement-mode Power MOSFET in TO-220 Full-Pak package, featuring 0.024Ω R_DS(on) at V_GS = 10V, 210mJ single-pulse avalanche energy, and isolated tab design rated for 2.5kV_RMS isolation - used in DC-DC converters, motor drives, and power supply primary-side switching.

For engineers reviewing the IRFIZ44NPBF datasheet, IRFIZ44NPBF pinout, IRFIZ44NPBF application, or IRFIZ44NPBF equivalent, key selection criteria include its 3.3°C/W junction-to-case thermal resistance, 65nC total gate charge, 5.0V/ns peak diode recovery dv/dt rating, and full-pak mounting compatibility with single-screw heat sink attachment.

Technical Context

This HEXFET® device employs fifth-generation silicon processing to minimize conduction loss while maintaining rugged unclamped inductive switching capability. Its integrated body diode exhibits 1.3V forward voltage at 17A and 65–98ns reverse recovery time, enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

The TO-220 Full-Pak construction provides galvanic isolation between drain (tab) and leads via high-dielectric molding compound - eliminating external insulators - with 4.8mm creepage distance and thermal performance matching a 100µm mica barrier under standard TO-220 mounting.

Key Specifications

Pinout & Package

TO-220 Full-Pak package with electrically isolated metal tab (drain), three leads in standard G-D-S configuration, and molded compound providing 2.5kV_RMS isolation between tab and leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44N, IRFIZ44NPBF trades slightly higher R_DS(on) for certified isolation and lower thermal resistance; versus STP55NF06L, it sacrifices conduction efficiency for guaranteed avalanche ruggedness and proven reliability in harsh transient environments.

Availability

IRFIZ44NPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, AC-DC power supplies, and automotive load switching requiring stable component supply across production lifecycles.

Supply support for IRFIZ44NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to the HEXFET® Power MOSFET product line, engineered for high-reliability power conversion and switching in commercial, industrial, and transportation systems where thermal robustness and transient immunity are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFIZ44NPBF supports 22A continuous drain current at T_C = 100°C, derated linearly from 31A at 25°C using the 0.3W/°C derating factor. This reflects thermal limitation of the TO-220 Full-Pak package, not silicon capability, and assumes proper heatsink mounting with ≤1.1N·m torque.

Does the isolated tab require thermal compound when mounted to a heatsink?

Yes - thermal compound (e.g., silicone-based grease or phase-change pad) must be applied between the isolated metal tab and heatsink surface to minimize junction-to-ambient thermal resistance. The 3.3°C/W R_θJC rating assumes optimal thermal interface; omitting compound increases effective R_θJA by ≥20%.

Can IRFIZ44NPBF replace IRFZ44N in existing PCB layouts?

No - although both use TO-220 outline, the Full-Pak variant has different leadframe geometry and tab isolation structure. Pin spacing matches, but mechanical mounting differs: IRFIZ44NPBF uses single-screw clip-mounting through the tab, while IRFZ44N requires insulating hardware. Layout reuse risks electrical shorts or thermal failure.

What is the significance of the 5.0V/ns dv/dt rating?

This rating specifies the maximum allowable voltage slew rate across the drain-source terminals during body diode reverse recovery. Exceeding 5.0V/ns may induce false turn-on via capacitive coupling into the gate, causing shoot-through in bridge configurations. It mandates careful layout with minimized drain loop inductance and gate drive impedance tuning.