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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFL014

Name: IRFL014
Brand: Vishay Siliconix
SKU: IRFL014
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL014

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL014.pdf

Description:: MOSFET N-CH 60V 2.7A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFL014 from Vishay Siliconix is a 60 V, 2.7 A N-channel enhancement-mode power MOSFET in SOT-223 package, featuring 0.20 Ω R_DS(on) at V_GS = 10 V, 11 nC total gate charge, and 100 mJ single-pulse avalanche energy-designed for low-power DC-DC converters, LED drivers, and load-switching applications where surface-mount thermal efficiency and fast switching are critical.

For engineers reviewing the IRFL014 datasheet, IRFL014 pinout, IRFL014 application, or IRFL014 equivalent, this page delivers verified electrical parameters, validated SOT-223 terminal mapping, real-world thermal derating data (0.017 W/°C on PCB mount), and two confirmed alternative MOSFETs with documented parameter trade-offs for board-level redesign or supply continuity planning.

Technical Context

This third-generation Vishay power MOSFET uses planar silicon technology optimized for ruggedness and dynamic dV/dt immunity (4.5 V/ns), with intrinsic body diode recovery time of 70–140 ns and reverse recovery charge of 0.20–0.40 μC. Its gate threshold voltage range (2.0–4.0 V) supports standard 5 V and 10 V logic-level drive without level-shifting circuitry.

The device operates across –55 °C to +150 °C junction temperature, with maximum power dissipation of 2.0 W when mounted on a 1" square FR-4 PCB and thermal resistance R_thJA of 60 °C/W under those conditions-enabling reliable operation in space-constrained industrial controls and automotive auxiliary modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Withstands up to 60 V drain-source blocking voltage, suitable for 48 V rail systems and unregulated input stages.
R_DS(on)	0.20 Ω @ V_GS = 10 V - Delivers ≤0.87 W conduction loss at 2.7 A continuous current, minimizing self-heating in compact layouts.
Q_g	11 nC - Enables fast turn-on/turn-off with low gate-drive power; compatible with microcontroller GPIO or low-current drivers.
I_D (T_C = 100 °C)	1.7 A - Specifies usable continuous current at elevated case temperatures, critical for sealed enclosures without forced airflow.
E_AS	100 mJ - Supports unclamped inductive switching events (e.g., relay coils, solenoids) without failure under defined test conditions.
V_SD	1.6 V @ I_S = 2.7 A - Defines forward voltage drop of integrated body diode, directly impacting freewheeling losses in synchronous rectifier or H-bridge configurations.

Pinout & Package

SOT-223 package with exposed drain tab for enhanced thermal conduction; footprint compatible with automated pick-and-place; requires minimum 1" × 1" FR-4 copper area for rated 2.0 W PCB-mount power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; threshold 2.0–4.0 V; ±20 V absolute max rating.
D (Drain)	High-side current path	Connected to exposed metal tab; serves as primary heat sink interface and high-voltage output node.
S (Source)	Reference node / return path	Common reference for gate drive and load current return; ties to system ground or low-side switch node.

Key Features

Feature	Design Value
Surface-mount SOT-223 package	Enables automated assembly and achieves >1.25 W power dissipation without heatsink-exceeding standard SOIC thermal limits.
Dynamic dV/dt rating (4.5 V/ns)	Prevents false turn-on during high-slew-rate transients in motor drives or SMPS secondary-side switching.
Low Q_gd/Q_g ratio (5.8/11 nC)	Reduces Miller effect-induced switching delay, improving controllability in hard-switched topologies.
Body diode t_rr = 70–140 ns	Minimizes reverse recovery losses in non-synchronous buck or flyback converters operating below 500 kHz.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements.

Applications

LED Constant-Current Driver	Low-Voltage Load Switch
Use Scenario: Regulating current through high-brightness LEDs in automotive interior lighting or signage using PWM dimming. IC Role / Device Role / Timing Role: Low-side switching element controlling LED string current path with fast turn-off to preserve PWM fidelity. Use Value: 0.20 Ω R_DS(on) limits conduction loss to <0.9 W at 2.7 A, while 19 ns fall time ensures clean PWM edges at 1–5 kHz.	Use Scenario: Enabling/disabling power to peripheral modules (e.g., sensors, radios) in battery-powered IoT nodes. IC Role / Device Role / Timing Role: High-efficiency, logic-level controlled power gate with minimal quiescent current draw. Use Value: Gate leakage <±100 nA and V_GS(th) ≤4.0 V allow direct MCU GPIO control; 2.7 A rating supports typical 1–2 A module loads.
DC-DC Buck Converter High-Side Switch	Clamp Protection Circuit
Use Scenario: Serving as upper switch in non-synchronous buck regulators for point-of-load conversion from 12 V or 24 V inputs. IC Role / Device Role / Timing Role: Fast-switching power transistor handling pulsed drain currents up to 22 A with controlled dv/dt. Use Value: 10 ns turn-on delay and 50 ns rise time support 300–500 kHz switching frequencies; 100 mJ E_AS tolerates inductive kickback during fault events.	Use Scenario: Absorbing transient energy from inductive loads (e.g., relays, solenoids) in PLC output modules. IC Role / Device Role / Timing Role: Avalanche-rated clamp device conducting surge current until snubber network dissipates energy. Use Value: Rated for repetitive unclamped inductive switching with 100 mJ single-pulse avalanche capability and 4.5 V/ns dV/dt immunity.

LED Constant-Current Driver

Low-Voltage Load Switch

Use Scenario: Regulating current through high-brightness LEDs in automotive interior lighting or signage using PWM dimming.

IC Role / Device Role / Timing Role: Low-side switching element controlling LED string current path with fast turn-off to preserve PWM fidelity.

Use Value: 0.20 Ω R_DS(on) limits conduction loss to <0.9 W at 2.7 A, while 19 ns fall time ensures clean PWM edges at 1–5 kHz.

Use Scenario: Enabling/disabling power to peripheral modules (e.g., sensors, radios) in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: High-efficiency, logic-level controlled power gate with minimal quiescent current draw.

Use Value: Gate leakage <±100 nA and V_GS(th) ≤4.0 V allow direct MCU GPIO control; 2.7 A rating supports typical 1–2 A module loads.

DC-DC Buck Converter High-Side Switch

Clamp Protection Circuit

Use Scenario: Serving as upper switch in non-synchronous buck regulators for point-of-load conversion from 12 V or 24 V inputs.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling pulsed drain currents up to 22 A with controlled dv/dt.

Use Value: 10 ns turn-on delay and 50 ns rise time support 300–500 kHz switching frequencies; 100 mJ E_AS tolerates inductive kickback during fault events.

Use Scenario: Absorbing transient energy from inductive loads (e.g., relays, solenoids) in PLC output modules.

IC Role / Device Role / Timing Role: Avalanche-rated clamp device conducting surge current until snubber network dissipates energy.

Use Value: Rated for repetitive unclamped inductive switching with 100 mJ single-pulse avalanche capability and 4.5 V/ns dV/dt immunity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFL014TR-GE3	Same die, identical R_DS(on), Q_g, and avalanche rating; differs only in tape-and-reel packaging (GE3 vs BE3) and Pb-free compliance marking.	No functional difference; fully interchangeable in design and layout; selected for alternate manufacturing location sourcing.	Preferred for new designs requiring Vishay's standard GE3 tape format and guaranteed dual-sourcing path.
IRFL9014	P-channel counterpart with –60 V V_DS, –1.8 A I_D, and 0.35 Ω R_DS(on); complementary topology, not pin-compatible.	Used in high-side switch configurations where load connects to V_IN and source connects to output-requires inverted gate drive logic.	Select only when high-side switching topology is required; not a drop-in replacement due to polarity, pinout, and drive inversion.

Compared with IRFL014, SiHFL014TR-GE3 offers identical electrical performance and mechanical fit with standardized packaging, while IRFL9014 provides complementary P-channel functionality for high-side use cases-but demands revised gate drive architecture and layout changes.

Availability

IRFL014 is available at Aetrix Electronics and suitable for LED drivers, load-switching circuits, and DC-DC converter designs requiring stable component supply, RoHS-compliant packaging, and proven avalanche ruggedness in industrial and automotive auxiliary systems.

Supply support for IRFL014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific ruggedization.

The IRFL014 belongs to Vishay's third-generation surface-mount power MOSFET family engineered for cost-effective, thermally efficient switching in space-constrained 24–48 V industrial and automotive subsystems.

FAQ

What is the maximum continuous drain current for IRFL014 at 100 °C case temperature?

The IRFL014 supports 1.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the SOT-223 package under sustained high-temperature operation and must be used for thermal design validation-not the 2.7 A rating at 25 °C.

Does IRFL014 have avalanche capability, and how is it rated?

Yes, the IRFL014 is rated for single-pulse avalanche energy of 100 mJ under defined test conditions (V_DD = 25 V, L = 16 mH, I_AS = 2.7 A). This capability enables robust operation during inductive switching transients without external clamping components in many low-energy applications.

What is the gate threshold voltage range for IRFL014, and why does it matter?

The IRFL014 has a gate threshold voltage range of 2.0 V to 4.0 V at I_D = 250 μA. This wide range ensures reliable turn-on with standard 3.3 V or 5 V logic outputs while maintaining noise immunity-critical for stable operation in electrically noisy environments like motor control or automotive cabins.

Can IRFL014 be used in parallel with other MOSFETs, and what design considerations apply?

Yes, the IRFL014 is designed for ease of paralleling due to its positive R_DS(on) temperature coefficient and low gate charge. To ensure current sharing, use matched gate resistors, symmetrical PCB layout, and common-source routing-avoiding significant thermal gradients between devices.

What is the thermal resistance from junction to ambient for IRFL014 when mounted on a PCB?

When mounted on a 1" square FR-4 PCB, the IRFL014 has a maximum junction-to-ambient thermal resistance (R_thJA) of 60 °C/W. This value assumes standard JEDEC test conditions and guides heatsinking decisions-e.g., a 20 °C rise above ambient allows ~0.33 W of safe power dissipation without additional copper.

IRFL014 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL014 FAQ

1.How can I place an order for IRFL014 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL014 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL014 reliable?

The price and inventory of IRFL014 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL014 is usually 5 days.

3.What payment methods are accepted for IRFL014?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL014 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL014?

IRFL014 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL014 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL014?

For technical support, including IRFL014 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL014 requirements.

6.How does Aetrix verify that IRFL014 is sourced from the original manufacturer or authorized distributors?

All IRFL014 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL014 meets industry standards.

7.What is the process for return or replacement of IRFL014?

All IRFL014 units undergo pre-shipment inspection (PSI). If there is an issue with IRFL014, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL014 part is unused and in its original packaging.

Return procedure for IRFL014:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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