Vishay Siliconix IRFL110

Overview

IRFL110 from Vishay Siliconix is a 100 V, 1.5 A N-channel surface-mount power MOSFET in SOT-223 package, with R_DS(on) = 0.54 Ω at V_GS = 10 V, Q_g = 8.3 nC, and repetitive avalanche rating. It serves as a low-side switching element in DC-DC converters, LED drivers, and load-switching circuits requiring ruggedness and fast turn-on/turn-off.

For engineers reviewing the IRFL110 datasheet, IRFL110 pinout, IRFL110 application, or IRFL110 equivalent, key selection considerations include its 100 V V_DS, 0.54 Ω on-resistance at 10 V gate drive, 8.3 nC total gate charge, SOT-223 thermal performance (2.0 W PCB mount), and dV/dt robustness (5.5 V/ns).

Technical Context

This third-generation power MOSFET uses planar V-groove silicon technology optimized for surface-mount reliability and thermal efficiency. Its design integrates a low-inductance source-drain path (L_S = 6.0 nH, L_D = 4.0 nH) and supports unclamped inductive switching with E_AS = 150 mJ.

The device operates across –55 °C to +150 °C junction temperature, features V_GS(th) = 2.0–4.0 V, and delivers stable R_DS(on) up to 125 °C with 0.63 V/°C V_DS temperature coefficient - enabling predictable conduction loss in thermally constrained layouts.

Key Specifications

Pinout & Package

SOT-223 package with exposed drain tab for enhanced thermal conduction; footprint matches JEDEC TO-261AA; 6.5 mm × 3.5 mm × 1.7 mm body; 1" square FR-4 PCB mount enables 2.0 W power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFL110, SiHFL110TR-GE3 offers identical electrical performance with enhanced environmental compliance, while IRFL9110 provides complementary P-channel functionality for high-side use - neither is pin-compatible, and both require layout adaptation for polarity or drive topology changes.

Availability

IRFL110 is available at Aetrix Electronics and suitable for industrial power supplies, LED lighting systems, and automotive auxiliary switching applications requiring stable component supply and long-term manufacturability.

Supply support for IRFL110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on power efficiency, ruggedness, and surface-mount reliability.

The IRFL110 belongs to Vishay's third-generation SOT-223 power MOSFET family, engineered for cost-sensitive, thermally constrained applications where fast switching, avalanche tolerance, and PCB-mount thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRFL110 at 100 °C case temperature?

The IRFL110 supports 0.96 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-223 package under sustained power dissipation; designers must verify PCB copper area and airflow to maintain safe junction temperature below 150 °C. The IRFL110 datasheet confirms this value with linear derating factor of 0.025 W/°C above 25 °C.

Does IRFL110 have a built-in body diode, and what are its key parameters?

Yes, the IRFL110 includes an integral body diode with V_SD = 2.5 V at I_S = 1.5 A and T_J = 25 °C, reverse recovery time t_rr = 100–200 ns, and Q_rr = 0.44–0.88 μC. These values are measured under standardized conditions (I_F = 5.6 A, dI/dt = 100 A/μs) and directly impact performance in synchronous rectification and freewheeling applications. The IRFL110 body diode is not optimized for ultrafast recovery but provides robust operation in medium-frequency switching.

Can IRFL110 be driven directly from a 3.3 V microcontroller GPIO?

No, the IRFL110 is not a logic-level MOSFET: its V_GS(th) range is 2.0–4.0 V, and R_DS(on) is specified at V_GS = 10 V. At 3.3 V gate drive, the device remains in weak inversion with high R_DS(on) (>5 Ω), causing excessive heating. A gate driver (e.g., TC4427) or level-shifter is required to deliver ≥10 V to achieve the rated 0.54 Ω on-resistance. The IRFL110 datasheet explicitly states gate drive requirements in the "Features" and "Specifications" sections.

What is the thermal resistance from junction to ambient for IRFL110 mounted on a 1" square PCB?

When mounted on a 1" square FR-4 or G-10 PCB, the IRFL110 has a maximum junction-to-ambient thermal resistance (R_thJA) of 60 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes standard soldering and no additional heatsinking; actual performance improves with increased copper area or thermal vias. The IRFL110's exposed drain tab is the primary thermal path, making PCB layout critical to achieving the rated 2.0 W power dissipation at T_A = 25 °C.

Is IRFL110 suitable for avalanche energy handling in unclamped inductive switching?

Yes, the IRFL110 is repetitively avalanche rated with single-pulse E_AS = 150 mJ and repetitive E_AR = 0.31 mJ. These values are validated per test conditions in Figure 12 (L = 25 mH, I_AS = 3.0 A, V_DD = 25 V). Designers must limit pulse width and duty cycle per Figure 11 to avoid exceeding T_J(max) = 150 °C. The IRFL110's avalanche capability eliminates need for external clamping in many relay or solenoid drive circuits.