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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP22N50APBFXKMA1

Name: IRFP22N50APBFXKMA1
Brand: Infineon Technologies
SKU: IRFP22N50APBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP22N50APBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP22N50APBFXKMA1.pdf

Description:: MOSFET N-CH 500V 22A TO247AC

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Product details

Overview

IRFP22N50APBFXKMA1 from Infineon is a 500 V, 22 A, 0.23 Ω R_DS(on) N-channel enhancement-mode Power MOSFET in TO-247AC package, designed for high-voltage switching in primary-side SMPS and UPS inverters. It delivers 277 W power dissipation at T_C = 25°C and supports 88 A pulsed drain current.

For engineers reviewing the IRFP22N50APBFXKMA1 datasheet, IRFP22N50APBFXKMA1 pinout, IRFP22N50APBFXKMA1 application, or IRFP22N50APBFXKMA1 equivalent, key selection criteria include avalanche ruggedness (E_AS = 1180 mJ), low gate charge (Q_g = 120 nC), diode recovery performance (t_rr = 570–850 ns), and thermal resistance (R_θJC = 0.45 °C/W).

Technical Context

This HEXFET® device uses planar stripe DMOS technology with fully characterized avalanche capability and optimized gate charge profile. Its 0.23 Ω R_DS(on) at V_GS = 10 V and 13 A enables efficient conduction in high-frequency hard-switched topologies.

The integrated body diode exhibits 1.5 V forward voltage at 22 A and 25°C, with controlled reverse recovery (Q_rr = 6.1–9.2 µC) and dv/dt immunity up to 4.8 V/ns at 150°C - critical for full-bridge and PFC boost stages where commutation stress is high.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands 500 V DC blocking voltage in off-state, suitable for 400 V rectified bus applications.
R_DS(on) max	0.23 Ω - Conduction loss of ≤11.6 W at 22 A continuous, enabling compact heatsink design.
I_D (continuous)	22 A - Rated silicon-limited current at T_C = 25°C; derates to 14 A at T_C = 100°C.
Q_g	120 nC - Low total gate charge reduces driver power and simplifies gate drive circuitry.
E_AS	1180 mJ - Single-pulse avalanche energy rating ensures robustness during transient overvoltage events.
R_θJC	0.45 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks with predictable thermal modeling.
t_rr	570–850 ns - Reverse recovery time defines safe commutation window in bridge-leg switching.

Pinout & Package

TO-247AC package with isolated tab (drain-connected). Three-terminal configuration: Gate (G), Drain (D), Source (S). Mounting torque: 1.1 N·m (10 lbf·in); soldering temperature limit: 300°C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10 V logic-level signal to fully enhance channel; threshold range 2.0–4.0 V.
D	Drain (high-side switch node)	Connected to high-voltage DC bus or transformer primary; electrically tied to metal tab.
S	Source (return path)	Reference node for gate drive and current sensing; carries full load current and body diode conduction.

Key Features

Feature	Design Value
Low Q_g (120 nC)	Reduces gate driver power loss and enables use of low-cost, low-current drivers in high-frequency SMPS.
Fully characterized C_iss/C_oss/C_rss	Enables accurate snubber design and predictive EMI modeling across operating voltage range (1–400 V).
Avalanche-rated (E_AS = 1180 mJ)	Eliminates need for external clamping in inductive turn-off transients common in PFC and LLC converters.
Body diode t_rr & Q_rr specified	Allows reliable synchronous rectification or freewheeling operation without uncharacterized reverse recovery spikes.
Lead-free (PbF) construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1.

Applications

Full-Bridge DC-DC Converters

Active PFC Boost Stages

Use Scenario: Primary-side switching in telecom and server PSUs converting 400 V DC to 12 V/48 V with >100 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side and low-side switching element in symmetrical full-bridge topology; handles bidirectional voltage reversal during dead-time.

Use Value: 0.45 °C/W R_θJC and 1180 mJ E_AS ensure thermal stability and fault tolerance under asymmetric load or short-circuit conditions.

Use Scenario: Boost switch in universal-input (90–264 V AC) PFC front-end delivering 400 V DC bus for downstream converters.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch operating in continuous conduction mode (CCM) with 50–200 kHz PWM.

Use Value: 0.23 Ω R_DS(on) minimizes conduction loss at high RMS current; 120 nC Q_g enables efficient gate driving at high duty cycles.

Uninterruptible Power Supplies

Industrial Motor Drives (Inverter Stage)

Use Scenario: Inverter stage converting battery-backed 400 V DC to 230 V AC output during mains failure in line-interactive UPS systems.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling 50 Hz fundamental plus harmonic content up to 3 kHz; subjected to repetitive avalanche during overload.

Use Value: Specified 88 A pulsed current and 1180 mJ single-pulse avalanche energy support short-term overload without failure.

Use Scenario: Output inverter stage in 3 kW HVAC drives powering three-phase induction motors with regenerative braking.

IC Role / Device Role / Timing Role: Switching element in six-pack IGBT/MOSFET inverter module; conducts body-diode current during regeneration.

Use Value: Body diode V_SD = 1.5 V and t_rr = 570–850 ns enable controlled freewheeling with minimal voltage overshoot and EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22NM50FD	R_DS(on) = 0.22 Ω, Q_g = 115 nC, E_AS = 1050 mJ, TO-247 long leads	Lower gate charge but reduced avalanche margin; requires tighter layout for dv/dt control	Preferred when gate drive efficiency is prioritized over worst-case surge robustness
IXFH22N50P	R_DS(on) = 0.24 Ω, Q_g = 125 nC, E_AS = 1250 mJ, TO-247 non-isolated tab	Higher avalanche rating but slightly higher conduction loss; tab not electrically isolated	Chosen for ultra-rugged industrial inverters where isolation is handled externally

Compared with STW22NM50FD and IXFH22N50P, IRFP22N50APBFXKMA1 offers balanced trade-offs: best-in-class R_DS(on)/Q_g ratio among 500 V 22 A MOSFETs, verified avalanche performance, and isolated TO-247AC mechanical interface for simplified thermal and electrical integration.

Availability

IRFP22N50APBFXKMA1 is available at Aetrix Electronics and suitable for Switch Mode Power Supply (SMPS), Uninterruptable Power Supply (UPS), and high-speed power switching applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFP22N50APBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFP22N50APBFXKMA1 has an operating junction temperature range of –55°C to +150°C. Continuous operation at T_J = 150°C is permitted only if thermal design ensures that the device remains within its Safe Operating Area (SOA) limits, including derated current and voltage boundaries per Figure 8 of the datasheet.

Is the TO-247AC package electrically isolated?

Yes - the TO-247AC package used for IRFP22N50APBFXKMA1 features an electrically isolated metal tab connected exclusively to the Drain terminal. This allows direct mounting to grounded heatsinks without requiring insulating pads or bushings, simplifying thermal management and reducing parasitic inductance.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the device specifies ±30 V gate-to-source voltage rating, but reliable turn-off is achieved with V_GS = 0 V. A negative gate bias (e.g., –5 V) is optional and used only in high-noise environments to improve noise immunity; it is not required for functional operation per datasheet test conditions.

Can the body diode be used for synchronous rectification?

No - the body diode is not optimized for synchronous rectification due to relatively high V_SD (1.5 V) and moderate Q_rr (6.1–9.2 µC). It is intended for freewheeling and clamping. For synchronous rectification, discrete Schottky or dedicated SR controllers with low-V_F MOSFETs are recommended.

IRFP22N50APBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 277W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP22N50APBFXKMA1 FAQ

1.How can I place an order for IRFP22N50APBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP22N50APBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP22N50APBFXKMA1 reliable?

The price and inventory of IRFP22N50APBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP22N50APBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRFP22N50APBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP22N50APBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP22N50APBFXKMA1?

IRFP22N50APBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP22N50APBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP22N50APBFXKMA1?

For technical support, including IRFP22N50APBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP22N50APBFXKMA1 requirements.

6.How does Aetrix verify that IRFP22N50APBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRFP22N50APBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP22N50APBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRFP22N50APBFXKMA1?

All IRFP22N50APBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP22N50APBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP22N50APBFXKMA1 part is unused and in its original packaging.

Return procedure for IRFP22N50APBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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