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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics IRFP250

Name: IRFP250
Brand: STMicroelectronics
SKU: IRFP250
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP250

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP250.pdf

Description:: MOSFET N-CH 200V 33A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP250 from STMicroelectronics is an N-channel enhancement-mode PowerMESH™II MOSFET designed for high-current, high-voltage switching in power conversion stages. It delivers 33 A continuous drain current at 25°C, 200 V V_DSS, 0.073 Ω R_DS(on) at V_GS = 10 V, and 100% avalanche tested to 33 A repetitive current - used in UPS inverters and telecom DC-AC converters.

For engineers reviewing the IRFP250 datasheet, IRFP250 pinout, IRFP250 application, or IRFP250 equivalent, key selection criteria include its 200 V breakdown rating, low gate charge (117–158 nC), rugged unclamped inductive switching capability, and TO-247 thermal resistance of 0.66 °C/W junction-to-case.

Technical Context

This MOSFET employs ST's second-generation PowerMESH™II layout, optimizing R_DS(on) × area while preserving fast switching performance. Its gate threshold voltage (2–4 V) enables standard 10 V gate drive compatibility, and its minimized Q_g/Q_gd ratio supports efficient hard-switching topologies.

The device integrates a robust intrinsic body diode with 1.6 V forward voltage at 33 A and 370 ns reverse recovery time under harsh conditions (T_j = 150°C, di/dt = 100 A/µs), enabling reliable synchronous rectification and freewheeling in high-frequency converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - supports 170 V AC line-derived bus rails with margin for transients
R_DS(on)	0.073 Ω (typ.) at V_GS = 10 V - limits conduction loss to ≤8 W at 33 A
I_D (cont.)	33 A at T_C = 25°C - requires heatsinking above ~20 A in continuous operation
Q_g	117–158 nC - determines gate driver power and switching speed in 50–100 kHz designs
E_AS	600 mJ - enables safe single-pulse energy absorption during inductive turn-off
dv/dt Rating	5 V/ns - withstands rapid voltage transients without spurious turn-on
R_thj-case	0.66 °C/W - allows ~130 W dissipation before reaching 150°C junction limit at 25°C case

Pinout & Package

IRFP250 uses the industry-standard TO-247 package: three leads in linear configuration, with Drain connected to the metal tab (pin 2), Source on pin 1, and Gate on pin 3. The tab is electrically connected to Drain and must be isolated from heatsink unless circuit topology permits common-Drain mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; carries full load current return path
Pin 2 (Drain)	Drain terminal / Metal tab	Main high-side switching node; electrically tied to heatsink mounting surface
Pin 3 (Gate)	Control input	High-impedance MOS control node requiring <158 nC charge for full enhancement

Key Features

Feature	Design Value
100% avalanche tested	Guarantees repetitive 33 A unclamped inductive switching without degradation
PowerMESH™II cell layout	Reduces R_DS(on) × area by >25% vs first-gen MESH OVERLAY™ while maintaining speed
Low Q_gd/Q_g ratio	~43% - improves Miller immunity and reduces switching losses in hard-switched converters
Extremely high dv/dt capability	5 V/ns - prevents false triggering during fast voltage transitions in bridge legs
TO-247 thermal performance	0.66 °C/W R_thj-case - enables higher power density than TO-220 equivalents

Applications

Uninterruptible Power Supplies (UPS)

Telecom DC-AC Inverters

Use Scenario: Bidirectional DC bus switching in online double-conversion UPS systems handling 1–3 kVA loads.

IC Role / Device Role / Timing Role: High-side N-channel switch in half-bridge output stage, operating at 20–50 kHz with synchronous rectification.

Use Value: 0.073 Ω R_DS(on) and 600 mJ E_AS ensure low conduction loss and reliable fault energy handling during battery backup transitions.

Use Scenario: Isolated 48 V DC to 230 V AC inversion in telecom base station power supplies.

IC Role / Device Role / Timing Role: Main switching element in full-bridge inverter primary side, driven by transformer-isolated gate drivers.

Use Value: 200 V V_DSS provides margin over 400 V DC bus; 5 V/ns dv/dt rating prevents shoot-through during bus transient events.

Industrial Motor Drives

Lighting Ballast Converters

Use Scenario: 3-phase IGBT/MOSFET inverter stage for 0.5–2 kW variable-frequency drives controlling induction motors.

IC Role / Device Role / Timing Role: Low-side switching device in 3-phase bridge, commutated at ≤16 kHz with active freewheeling.

Use Value: 33 A continuous rating and 132 A pulsed current support peak torque demands; body diode t_rr = 370 ns minimizes switching loss during freewheeling.

Use Scenario: High-frequency resonant half-bridge in electronic HID lamp ballasts driving 70–150 W lamps.

IC Role / Device Role / Timing Role: Switching transistor in LLC or LCC resonant converter operating at 100–300 kHz.

Use Value: Low C_oss (420 pF) and Crss (120 pF) reduce capacitive switching loss; ruggedness ensures reliability across lamp ignition surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50	500 V V_DSS, 0.22 Ω R_DS(on), TO-220 package	Higher voltage rating but higher on-resistance and inferior thermal resistance (R_thj-case = 1.25 °C/W)	Preferable only where 500 V rating is mandatory and power level ≤15 A
IXTH30N20P	200 V V_DSS, 0.065 Ω R_DS(on), TO-247, 190 W P_TOT	Lower R_DS(on) and higher power rating, but not avalanche rated per datasheet	Preferred for efficiency-critical 30+ A designs where avalanche stress is mitigated externally

Compared with STP20NM50 and IXTH30N20P, IRFP250 uniquely balances 200 V rating, 0.073 Ω on-resistance, TO-247 thermal performance, and guaranteed avalanche ruggedness - making it optimal for cost-sensitive, medium-power industrial inverters where fault energy management is critical.

Availability

IRFP250 is available at Aetrix Electronics and suitable for uninterruptible power supplies (UPS), telecom DC-AC inverters, and industrial motor drives requiring stable component supply and long-term obsolescence mitigation.

Supply support for IRFP250 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

The PowerMESH™II MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, telecom, and renewable energy systems - emphasizing ruggedness, low gate charge, and optimized R_DS(on) × area trade-offs.

FAQ

What is the maximum safe operating temperature for IRFP250?

The absolute maximum junction temperature is 150°C. Operation must remain within the Safe Operating Area (SOA) curve, especially under pulse conditions. With R_thj-case = 0.66 °C/W and 25°C case temperature, sustained 180 W dissipation would reach this limit - practical derating to ≤130 W is recommended for reliability.

Can IRFP250 be used in synchronous rectification topologies?

Yes - its body diode has characterized reverse recovery (t_rr = 370 ns, Q_rr = 5.4 µC) and low forward voltage (V_SD = 1.6 V at 33 A). However, external Schottky or MOSFET synchronous rectifiers are preferred for >100 kHz operation due to diode recovery limitations.

Is IRFP250 pin-compatible with other TO-247 N-channel MOSFETs?

Yes - all standard TO-247 packages share identical mechanical footprint and pinout (Source-Gate-Drain, left-to-right). Electrical compatibility depends on V_DSS, R_DS(on), Q_g, and SOA; direct substitution requires verification of gate drive voltage, thermal design, and avalanche requirements.

Does IRFP250 require a negative gate voltage for reliable turn-off?

No - its gate threshold voltage is 2–4 V, and V_GS = 0 V fully turns off the device. However, applying –5 V to –10 V improves noise immunity in high-dv/dt environments and accelerates turn-off by removing minority carriers faster, especially in bridge configurations.

IRFP250 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 85mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 158 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2850 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

IRFP250 FAQ

1.How can I place an order for IRFP250 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP250 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP250 reliable?

The price and inventory of IRFP250 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP250 is usually 5 days.

3.What payment methods are accepted for IRFP250?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP250 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP250?

IRFP250 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP250 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP250?

For technical support, including IRFP250 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP250 requirements.

6.How does Aetrix verify that IRFP250 is sourced from the original manufacturer or authorized distributors?

All IRFP250 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP250 meets industry standards.

7.What is the process for return or replacement of IRFP250?

All IRFP250 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP250, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP250 part is unused and in its original packaging.

Return procedure for IRFP250:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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