Vishay Siliconix IRFP448

Overview

IRFP448 from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in TO-247AC package, featuring 0.60 Ω R_DS(on) at V_GS = 10 V, 84 nC total gate charge, and repetitive avalanche rating up to 11 A - designed for high-voltage DC-DC converters, motor drives, and industrial switch-mode power supplies.

For engineers reviewing the IRFP448 datasheet, IRFP448 pinout, IRFP448 application, or IRFP448 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 0.70 °C/W), body diode recovery characteristics (t_rr = 480–1100 ns), and real-world switching performance metrics under defined test conditions (V_DD = 250 V, I_D = 9.6 A, R_G = 7.8 Ω).

Technical Context

The IRFP448 employs third-generation planar vertical DMOS technology optimized for ruggedness and fast switching in hard-switched topologies. Its isolated central mounting hole and enhanced creepage distance meet commercial-industrial safety requirements, while dynamic dV/dt rating (3.5 V/ns) supports reliable operation in noisy high-di/dt environments.

Designed for unclamped inductive switching, it sustains single-pulse avalanche energy of 550 mJ and repetitive avalanche energy of 18 mJ. The integral body diode exhibits V_SD = 1.7 V at I_S = 11 A and t_rr = 480–1100 ns with Q_rr = 5.2–12 μC - critical for synchronous rectification and freewheeling path design.

Key Specifications

Pinout & Package

IRFP448 uses the TO-247AC package - a high-voltage variant of JEDEC TO-247 with isolated central mounting hole, 20.55 mm × 15.70 mm footprint, and 15.15 mm height. Thermal pad contour is optional; lead finish is uncontrolled per L1 specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP10NK50ZFP and IXFH12N50P, the IRFP448 uniquely combines certified creepage-enhanced TO-247AC packaging, 550 mJ avalanche energy, and 3.5 V/ns dV/dt immunity - making it the only option among the three qualified for safety-critical industrial motor drives requiring reinforced isolation.

Availability

IRFP448 is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, uninterruptible power systems, and DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRFP448 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFP448 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness, fast switching, and cost-effective performance in commercial-industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IRFP448 at 100 °C case temperature?

The IRFP448 supports 6.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 11 A rating at 25 °C and must be used with R_thJC = 0.70 °C/W to calculate junction temperature under actual heatsink conditions. Exceeding this current risks thermal runaway even with adequate heatsinking.

Does IRFP448 have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFP448 integrates a fast-recovery body diode with V_SD = 1.7 V at I_S = 11 A and T_J = 25 °C. Its reverse recovery time t_rr ranges from 480 ns to 1100 ns depending on test conditions (I_F = 9.6 A, dI/dt = 100 A/μs), and Q_rr is 5.2–12 μC - critical parameters for designing snubber networks and predicting commutation losses in bridge circuits.

What is the significance of the "AC" suffix in the TO-247AC package of IRFP448?

The "AC" in TO-247AC denotes an isolated central mounting hole - a structural enhancement over standard TO-247 that electrically separates the metal tab (drain-connected) from the screw hole. This design increases creepage distance between drain and mounting hardware, enabling compliance with IEC/UL safety standards for high-voltage industrial equipment without additional insulating hardware.

Can IRFP448 be paralleled with identical units, and what design considerations apply?

Yes, the IRFP448 is explicitly designed for easy paralleling, supported by positive temperature coefficient of R_DS(on), low internal source inductance (L_S = 13 nH), and matched threshold voltage (2.0–4.0 V). To ensure current sharing, use symmetrical PCB layout, individual gate resistors (≤10 Ω), and Kelvin-source connections - avoiding shared source traces that exacerbate imbalance due to L_S coupling.

What is the gate threshold voltage range for IRFP448, and how does it affect drive circuit design?

The IRFP448 has a gate threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA, meaning it begins conducting weakly within this range but requires ≥10 V for full enhancement (R_DS(on) = 0.60 Ω). Drive circuits must deliver ≥12 V to ensure margin against noise-induced turn-on and maintain low on-resistance across temperature and manufacturing variation - logic-level drivers are insufficient.