STMicroelectronics IRFP450

Overview

IRFP450 from STMicroelectronics is an N-channel enhancement-mode PowerMESH™II MOSFET rated for 500 V drain-source voltage, 0.31 Ω typical R_DS(on) at V_GS = 10 V and 7 A, and 14 A continuous drain current at T_C = 25 °C. It delivers high-speed switching in high-voltage DC-AC converters for welding equipment, UPS systems, and motor drives.

For engineers reviewing the IRFP450 datasheet, IRFP450 pinout, IRFP450 application, or IRFP450 equivalent, key selection factors include its 3.5 V/ns dv/dt capability, 800 mJ single-pulse avalanche energy, 75–90 nC total gate charge, 1.6 V source-drain diode forward voltage, and TO-247 package thermal resistance of 0.66 °C/W.

Technical Context

This MOSFET employs ST's second-generation PowerMESH™II layout, optimizing R_DS(on) × area while maintaining low gate charge (75–90 nC) and fast switching (t_r = 23 ns, t_f = 30 ns). Its ruggedness is validated by 100% unclamped inductive avalanche testing at I_AR = 14 A.

The device features a 500 V V_(BR)DSS, ±30 V gate-source rating, and integrated body diode with t_rr = 670 ns and Q_rr = 6.7 µC under specified conditions (I_SD = 14 A, di/dt = 100 A/µs, T_j = 150 °C), enabling reliable operation in hard-switched SMPS and inductive load circuits.

Key Specifications

Pinout & Package

IRFP450 is housed in a through-hole TO-247 package with 3 leads: Drain (pin 1), Gate (pin 2), Source (pin 3), mounted on a copper tab for direct heatsink attachment. The package provides low thermal resistance and mechanical robustness for high-power industrial use.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP14NK50Z and IXTH12N50L, IRFP450 offers the lowest R_DS(on) (0.31 Ω) and highest continuous current (14 A), making it optimal for thermally constrained, high-efficiency 500 V SMPS and motor drive designs where gate drive strength is available.

Availability

IRFP450 is available at Aetrix Electronics and suitable for switch mode power supplies, welding equipment inverters, and uninterruptible power supplies requiring stable component supply and long-term industrial availability.

Supply support for IRFP450 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

The PowerMESH™II MOSFET product line targets high-efficiency, high-reliability power conversion in industrial motor drives, welding systems, and telecom/UPS power supplies.

FAQ

What is the maximum safe operating junction temperature for IRFP450?

The absolute maximum operating junction temperature (T_j) is 150 °C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent degradation of the silicon die and packaging integrity. Derating is required above 25 °C case temperature at 1.5 W/°C to maintain safe thermal margins.

Does IRFP450 have an integrated body diode, and what are its key parameters?

Yes, IRFP450 includes a monolithic source-drain body diode. Key parameters include 14 A forward current (I_SD), 1.6 V forward voltage (V_SD) at I_SD = 14 A and V_GS = 0 V, 670 ns reverse recovery time (t_rr), and 6.7 µC reverse recovery charge (Q_rr) under standardized test conditions (T_j = 150 °C, di/dt = 100 A/µs).

Can IRFP450 replace IRFP460 in existing designs?

No-IRFP460 has higher voltage rating (500 V vs 500 V same), but lower R_DS(on) (0.27 Ω vs 0.31 Ω) and higher current (20 A vs 14 A). While both share TO-247 package and pinout, IRFP450's lower current and higher on-resistance may cause thermal overload or reduced efficiency in IRFP460-designed circuits without layout or drive adjustments.

Is IRFP450 suitable for synchronous rectification applications?

No-IRFP450 is not optimized for synchronous rectification. Its body diode has relatively high V_SD (1.6 V) and slow t_rr (670 ns), resulting in excessive conduction and switching losses compared to dedicated SR MOSFETs with low Q_rr and logic-level gate thresholds. Use devices like STP16NF06L or SiR626DP instead.