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STMicroelectronics IRFP460

Part No.:
IRFP460
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIRFP460.pdf
Description:
MOSFET N-CH 500V 18.4A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,120

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Product details

Overview

IRFP460 from STMicroelectronics is an N-channel enhancement-mode PowerMESH™II MOSFET rated for 500 V drain-source voltage, 0.22 Ω typical RDS(on) at VGS = 10 V, and 18.4 A continuous drain current at TC = 25 °C; used as a high-voltage switching element in DC-AC inverters for welding equipment and UPS systems.

For engineers reviewing the IRFP460 datasheet, IRFP460 pinout, IRFP460 application, or IRFP460 equivalent, key selection criteria include avalanche ruggedness (960 mJ EAS), dv/dt capability (3.5 V/ns), gate charge (95–128 nC), thermal resistance (0.57 °C/W Rthj-case), and TO-247 package compatibility with high-power heatsinking.

Technical Context

This MOSFET employs ST's second-generation PowerMESH™II layout, optimizing RDS(on) × area while maintaining fast switching (td(on) = 29 ns, tr = 21 ns) and low gate charge. Its 150 °C max junction temperature and 100% avalanche testing support robust operation under unclamped inductive switching.

The integrated body diode features 1.6 V forward voltage at 18.4 A and 480 ns reverse recovery time at Tj = 150 °C, enabling use in synchronous rectification and freewheeling paths where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS500 V - supports primary-side switching in offline SMPS and 400 V DC bus inverters without derating
RDS(on) (typ)0.22 Ω at VGS = 10 V - enables <1.5 W conduction loss at 18.4 A, reducing heatsink requirements
Qg95–128 nC - determines gate driver power demand and switching loss trade-off in hard-switched topologies
EAS960 mJ - ensures reliable energy absorption during single-pulse inductive turn-off events
dv/dt rating3.5 V/ns - prevents spurious turn-on in high-noise bridge configurations with fast voltage transients
Rthj-case0.57 °C/W - allows direct mounting to heatsinks for sustained 11.6 A operation at TC = 100 °C

Pinout & Package

IRFP460 uses the TO-247 package: three-terminal, through-hole, isolated tab (drain-connected), with standard lead spacing and 3.55–3.65 mm mounting hole diameter. Thermal resistance case-to-sink is 0.1 °C/W typical with proper grease and torque.

Pin/TerminalCircuit RoleDesign Meaning
1 (Tab)DrainElectrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits
2GateHigh-impedance control terminal; requires low-inductance gate drive path to minimize ringing and overshoot
3SourceReference node for gate drive and current sensing; carries full load current and must be routed with low inductance

Key Features

FeatureDesign Value
PowerMESH™II cell structureReduces RDS(on) × area by >25% vs first-gen MESH OVERLAY™, improving power density without sacrificing speed
100% unclamped inductive avalanche testedGuarantees minimum 20 A repetitive avalanche current and 960 mJ single-pulse energy handling
Minimized gate chargeQgd/Qgs ratio of ~2.8 enables faster voltage transition across Miller plateau with reduced driver stress
High dv/dt immunity3.5 V/ns rating validated under ISD ≤18.4 A, di/dt ≤100 A/µs, ensuring noise immunity in half-bridge motor drives

Applications

Welding Inverter Primary SwitchUPS DC-AC Inverter Stage

Use Scenario: High-frequency (20–50 kHz) hard-switched H-bridge converting 400 V DC bus to 50/60 Hz AC output in 5–10 kVA uninterruptible power supplies.

IC Role / Device Role / Timing Role: Main switching device in full-bridge topology; handles bidirectional current flow and withstands reverse recovery stress from body diode commutation.

Use Value: 0.22 Ω RDS(on) limits conduction loss to <7.5 W at 18.4 A, while 960 mJ EAS absorbs turn-off energy during short-circuit events.

Use Scenario: Primary-side switch in resonant or phase-shifted ZVS inverter for industrial arc welding machines operating from 3-phase rectified input.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element in series-resonant tank circuit; subjected to repetitive unclamped inductive switching.

Use Value: 3.5 V/ns dv/dt capability prevents false triggering during rapid bus voltage transitions; 150 °C Tjmax supports compact thermal design in enclosed cabinets.

Motor Drive Output StageSMPS Primary Switch (Offline)

Use Scenario: Three-phase inverter output stage driving induction motors up to 7.5 kW in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: Low-side or high-side switch in IGBT/MOSFET hybrid or all-MOSFET bridge; conducts pulsed currents up to 73.6 A (IDM).

Use Value: 480 ns trr and 5 µC Qrr reduce switching losses and EMI during freewheeling, critical for PWM frequencies above 10 kHz.

Use Scenario: Primary switch in 300–500 W flyback or forward converter operating directly from 85–265 V AC mains after rectification.

IC Role / Device Role / Timing Role: High-voltage switching transistor handling peak drain voltages near 500 V during startup and overload conditions.

Use Value: 500 V VDSS provides 20% margin over worst-case reflected flyback spikes, eliminating need for snubber networks in many designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP4NK50Z500 V, 4 A, 1.5 Ω RDS(on), TO-220 - lower current, higher on-resistance, lower gate charge (12 nC)Suitable only for sub-100 W SMPS; cannot replace IRFP460 in 10+ A loadsSelect when space-constrained TO-220 mounting is required and power level is ≤100 W.
FQP4N50500 V, 4 A, 1.4 Ω RDS(on), TO-220 - similar rating but no avalanche rating specified, no EAS dataLacks guaranteed avalanche ruggedness; unsuitable for unclamped inductive switching like welding invertersAcceptable only in resistive or lightly inductive loads with external clamping.

Compared with STP4NK50Z and FQP4N50, IRFP460 delivers 4.6× higher continuous current and verified 960 mJ avalanche energy-making it uniquely suitable for high-reliability, high-stress industrial inverters where failure modes include repetitive inductive turn-off stress.

Availability

IRFP460 is available at Aetrix Electronics and suitable for welding inverters, UPS DC-AC stages, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFP460 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The PowerMESH™II MOSFET product line targets high-efficiency, high-reliability power conversion systems-including industrial motor drives, renewable energy inverters, and telecom power supplies-where ruggedness and thermal performance are critical.

FAQ

What is the maximum safe operating temperature for IRFP460?

The IRFP460 has a maximum junction temperature (Tj) of 150 °C. Continuous operation at this limit requires thermal design ensuring case temperature does not exceed 100 °C (derated ID = 11.6 A). The storage temperature range is –65 to +150 °C, and lead temperature during soldering must not exceed 300 °C for 10 seconds.

Does IRFP460 require a gate resistor, and what value is recommended?

Yes-a gate resistor is essential to dampen ringing and control switching speed. For hard-switched applications at 10–20 kHz, a 4.7 Ω resistor is specified in the datasheet for switching time measurements. Lower values (2.2–4.7 Ω) optimize speed but increase EMI; higher values (10–22 Ω) reduce EMI and dV/dt stress at the cost of increased switching loss.

Can IRFP460 be used in parallel configurations?

Yes, but with strict layout and thermal symmetry requirements. Parallel operation demands matched RDS(on) (within ±10%), identical gate drive loop inductance, and shared heatsinking to ensure current sharing. The positive temperature coefficient of RDS(on) aids thermal stability, but gate threshold variation (2–4 V) necessitates individual gate resistors and Kelvin source connections.

Is the body diode suitable for freewheeling in continuous conduction mode?

The integrated body diode has a 1.6 V forward voltage at 18.4 A and 480 ns reverse recovery time at 150 °C. It is usable for freewheeling in low-frequency (<5 kHz) or low-duty-cycle applications, but its Qrr (5 µC) and IRRM (21 A) make it less efficient than discrete Schottky or SiC diodes in high-frequency CCM operation where reverse recovery losses dominate.

IRFP460 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
PowerMESH™ II
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
270mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
128 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
2980 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
220W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

IRFP460 FAQ

1.How can I place an order for IRFP460 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP460 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP460 reliable?

The price and inventory of IRFP460 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP460 is usually 5 days.

3.What payment methods are accepted for IRFP460?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP460 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP460?

IRFP460 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP460 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP460?

For technical support, including IRFP460 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP460 requirements.

6.How does Aetrix verify that IRFP460 is sourced from the original manufacturer or authorized distributors?

All IRFP460 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP460 meets industry standards.

7.What is the process for return or replacement of IRFP460?

All IRFP460 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP460, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP460 part is unused and in its original packaging.

Return procedure for IRFP460:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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