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Vishay Siliconix IRFP460A

Part No.:
IRFP460A
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIRFP460A.pdf
Description:
MOSFET N-CH 500V 20A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,522

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Product details

Overview

IRFP460A from Vishay Siliconix is a 500 V, 20 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring RDS(on) = 0.27 Ω at VGS = 10 V, Qg = 105 nC, and 960 mJ single-pulse avalanche energy - engineered for high-voltage switching in full-bridge and PFC boost topologies of industrial SMPS and UPS systems.

For engineers reviewing the IRFP460A datasheet, IRFP460A pinout, IRFP460A application, or IRFP460A equivalent, this page delivers verified electrical ratings, thermal resistance (RthJC = 0.45 °C/W), body diode recovery characteristics (trr = 480–710 ns), and gate charge waveform behavior critical for hard-switched converter design and layout validation.

Technical Context

The IRFP460A employs planar vertical DMOS technology with fully characterized Ciss (3100 pF), Coss (480 pF), and Crss (18 pF) to support accurate snubber and gate drive loss calculation. Its 0.27 Ω RDS(on) and 11 S transconductance enable low conduction loss and stable gain across temperature.

Avalanche ruggedness is validated per JEDEC JESD24-1: EAS = 960 mJ (TJ = 25 °C), IAR = 20 A repetitive, and dV/dt = 3.8 V/ns peak diode recovery rating - confirming suitability for unclamped inductive switching without external clamping in well-designed layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 500 V - supports DC bus voltages up to 400 V in PFC and full-bridge converters with margin.
RDS(on) 0.27 Ω @ VGS = 10 V - enables <1.1 W conduction loss at 20 A, reducing heatsink requirements.
Qg 105 nC - determines gate driver current demand (~2.5 A avg. for 40 ns rise time with 4.3 Ω RG).
EAS 960 mJ - allows safe operation under unclamped inductive turn-off (e.g., transformer leakage spikes) without failure.
trr 480–710 ns - defines minimum dead-time requirement to prevent shoot-through during synchronous rectification.
RthJC 0.45 °C/W - enables 280 W dissipation with ≤126 °C junction rise above 25 °C case temperature.
ID (TC = 100 °C) 13 A - sets practical continuous current limit in thermally constrained enclosures.

Pinout & Package

IRFP460A uses the TO-247AC (JEDEC standard) package with isolated drain tab, optimized for high-voltage isolation and thermal transfer via mounting screw (6–32 or M3, 10 lbf·in torque). The plastic body conforms to version 1 (facility code 9), with D = 20.40–20.70 mm, E = 15.50–15.87 mm, and thermal pad optional (D1/E1 dimensions defined).

Pin/Terminal Circuit Role Design Meaning
1 (Lead) Gate High-impedance control terminal requiring <26 nC charge to reach threshold; sensitive to ESD and ringing.
2 (Tab/Drain) Drain Main high-side switching node; electrically connected to metal tab - must be isolated from heatsink unless referenced to same potential.
3 (Lead) Source Power return path and gate reference; carries full load current and body diode reverse recovery charge (Qrr = 5.0–7.5 µC).
4 (Lead) Drain Secondary drain connection - internally tied to pin 2; used for redundant current path or Kelvin sensing in high-precision designs.

Key Features

Feature Design Value
Low gate charge (Qg = 105 nC) Reduces gate driver power loss and simplifies selection of low-current drivers (e.g., TC4420) without bootstrapping complexity.
Fully characterized Coss and Crss Enables precise modeling of Miller effect and zero-voltage switching (ZVS) feasibility in resonant topologies.
Effective output capacitance (Coss eff. = 140 pF) Reflects actual energy stored in Coss during VDS transition from 0 to 400 V - critical for soft-switching loss estimation.
Body diode trr and Qrr specified Supports reliable synchronous rectification design with predictable reverse recovery stress on complementary switches.
Avalanche-rated (EAS = 960 mJ) Eliminates need for external RCD clamp in many flyback and forward converter designs operating below 20 A peak current.

Applications

Industrial Switch Mode Power Supply Uninterruptible Power Supply (UPS)

Use Scenario: High-efficiency 3–5 kW offline SMPS using full-bridge topology with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-voltage switching device handling 20 A pulsed drain current at 50–100 kHz.

Use Value: 0.27 Ω RDS(on) minimizes conduction loss while 960 mJ EAS withstands transformer leakage energy without snubber.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from battery-backed DC link.

IC Role / Device Role / Timing Role: Inverter-stage switch in H-bridge output stage, commutating 15 A RMS load current.

Use Value: 3.8 V/ns dV/dt rating ensures robust body diode recovery during polarity reversal, preventing cross-conduction.

High-Voltage DC-DC Converter PFC Boost Stage

Use Scenario: Isolated 1 kV output DC-DC module for test equipment, fed from 400 V PFC front-end.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge, operating with ZVS at 100 kHz.

Use Value: Low Crss (18 pF) and Coss eff. (140 pF) reduce capacitive turn-on loss and improve ZVS window margin.

Use Scenario: Active PFC stage in 2 kW server PSU, boosting rectified AC to regulated 400 V DC.

IC Role / Device Role / Timing Role: Boost switch conducting 12 A average current with 80 A pulsed peaks.

Use Value: 80 A IDM rating accommodates line surge currents; 105 nC Qg enables efficient gate drive at 65–100 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP20NM50FP RDS(on) = 0.22 Ω (lower), but VDS = 500 V same; Qg = 70 nC (33% lower); TO-220FP package (lower power dissipation capability). Limited to ≤120 W continuous use due to RthJA = 65 °C/W; unsuitable for 280 W IRFP460A-level thermal loads. Select only when board space constraints prohibit TO-247 and power level stays below 100 W.
IXFH30N50P VDS = 500 V, RDS(on) = 0.18 Ω, Qg = 120 nC; TO-247 package; higher EAS = 1200 mJ but no Coss eff. spec. Better conduction efficiency but higher gate drive loss; lacks published body diode Qrr, limiting synchronous rectifier confidence. Prefer for new designs prioritizing lowest RDS(on), provided gate driver can supply >3 A peak and layout accommodates higher Qg.

Compared with STP20NM50FP and IXFH30N50P, the IRFP460A offers balanced trade-offs: sufficient RDS(on) for cost-sensitive 2–5 kW SMPS, proven avalanche performance with documented EAS and Qrr, and TO-247 thermal capability unmatched by TO-220 alternatives.

Availability

IRFP460A is available at Aetrix Electronics and suitable for industrial switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.

Supply support for IRFP460A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and application-specific characterization.

The IRFP460A belongs to Vishay's high-voltage power MOSFET product line, designed specifically for demanding industrial and telecom power conversion where avalanche capability, low gate charge, and repeatable SOA performance are mandatory.

FAQ

What is the maximum continuous drain current for IRFP460A at 100 °C case temperature?

The IRFP460A supports 13 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-247 package and ensures junction temperature remains ≤150 °C under steady-state conditions with proper heatsinking and RthJC = 0.45 °C/W.

Does IRFP460A have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFP460A integrates a monolithic body diode with trr = 480–710 ns and Qrr = 5.0–7.5 µC at TJ = 25 °C, IF = 20 A, and dI/dt = 100 A/µs. These values are measured and guaranteed, enabling accurate dead-time calculation and stress analysis in synchronous rectifier or half-bridge configurations.

Can IRFP460A be used in avalanche mode, and what is its single-pulse energy rating?

Yes, the IRFP460A is fully rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (EAS) is 960 mJ at TJ = 25 °C, tested per JEDEC JESD24-1 with L = 4.3 mH and IAS = 20 A. This rating is validated and published in the datasheet, not estimated.

What is the gate-source voltage limit for IRFP460A, and why is it critical?

The IRFP460A has a ±30 V absolute maximum gate-source voltage (VGS). Exceeding this risks permanent gate oxide damage. During switching, transient overshoot from PCB inductance or poor gate routing can breach this limit - hence gate resistors and TVS clamping are recommended, especially in high-dI/dt environments.

How does the effective output capacitance (Coss eff.) of IRFP460A differ from standard Coss?

Coss eff. = 140 pF for the IRFP460A is a derived value representing the fixed capacitance that yields the same charging time as the nonlinear Coss while VDS rises from 0 % to 80 % of 400 V. Unlike typical Coss (480 pF at VDS = 25 V), Coss eff. directly correlates to turn-on energy loss in hard-switched converters.

IRFP460A Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
270mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
280W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

IRFP460A FAQ

1.How can I place an order for IRFP460A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP460A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP460A reliable?

The price and inventory of IRFP460A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP460A is usually 5 days.

3.What payment methods are accepted for IRFP460A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP460A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP460A?

IRFP460A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP460A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP460A?

For technical support, including IRFP460A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP460A requirements.

6.How does Aetrix verify that IRFP460A is sourced from the original manufacturer or authorized distributors?

All IRFP460A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP460A meets industry standards.

7.What is the process for return or replacement of IRFP460A?

All IRFP460A units undergo pre-shipment inspection (PSI). If there is an issue with IRFP460A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP460A part is unused and in its original packaging.

Return procedure for IRFP460A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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