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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFP460BPBF

Name: IRFP460BPBF
Brand: Vishay Siliconix
SKU: IRFP460BPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP460BPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP460BPBF.pdf

Description:: MOSFET N-CH 500V 20A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP460BPBF from Vishay Siliconix is a 500 V, 20 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.25 Ω at V_GS = 10 V, Q_g = 170 nC, and avalanche-rated (E_AS = 281 mJ). It serves as a high-voltage switching element in SMPS primary-side circuits, PFC stages, and motor drive half-bridges.

For engineers reviewing the IRFP460BPBF datasheet, IRFP460BPBF pinout, IRFP460BPBF application, or IRFP460BPBF equivalent, key selection criteria include its 500 V V_DS, 0.25 Ω on-resistance at 10 V gate drive, 170 nC total gate charge, TO-247AC thermal performance (R_thJC = 0.45 °C/W), and unclamped inductive switching ruggedness.

Technical Context

This device uses planar vertical DMOS technology optimized for high-voltage power conversion. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V logic-level drivers, while low C_iss (3094 pF) and C_oss (152 pF) reduce capacitive switching losses in hard-switched topologies.

The integrated body diode supports freewheeling in inductive loads, with t_rr = 437 ns and Q_rr = 5.9 μC at 10 A/100 A/μs - critical for ZVS-assisted converters and synchronous rectification evaluation. Thermal design leverages the TO-247AC package's low junction-to-case resistance (0.45 °C/W) for high-power dissipation up to 278 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % safety margin for voltage transients
R_DS(on) max	0.25 Ω at V_GS = 10 V, I_D = 10 A - enables <1.25 W conduction loss at 5 A continuous current
Q_g max	170 nC - determines gate driver power requirement and switching speed in 100 kHz+ SMPS
E_AS	281 mJ - rated single-pulse avalanche energy allows robust operation during overvoltage events without snubbers
t_r/t_f	31/56 ns typical - supports fast switching with minimal overlap loss in hard-switched converters
R_thJC	0.45 °C/W - enables high power density mounting on heatsinks with predictable thermal rise
I_D cont	20 A at T_C = 25 °C - defines maximum continuous current under ideal heatsinking conditions

Pinout & Package

IRFP460BPBF is housed in a TO-247AC package with isolated drain tab and three leads: Gate (Lead 1), Drain (Leads 2 & 4), Source (Lead 3). The package features a thermally enhanced plastic body with optional thermal pad contour (D1/E1), 0.45 °C/W junction-to-case thermal resistance, and JEDEC-compliant mechanical dimensions per Document 91360.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V gate drive signal; requires ≤170 nC charge to fully enhance; high-impedance input (IGSS ≤ ±100 nA)
2 & 4 (Drain)	High-voltage power terminal	Connected to drain region and metal tab; carries full load current and withstands 500 V; electrically isolated from case
3 (Source)	Reference and return path	Serves as circuit ground reference for gate drive; connects to source region and internal body diode cathode

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	42.5 Ω·nC - minimizes combined conduction and switching losses in high-frequency power stages
Avalanche energy rating	281 mJ single-pulse - eliminates need for external clamping in inductive load switching applications
Body diode ruggedness	t_rr = 437 ns, Q_rr = 5.9 μC - enables reliable freewheeling in motor drives and PFC boost diodes
Low input capacitance	C_iss = 3094 pF - reduces gate driver loading and improves EMI behavior in high-dV/dt environments
High dV/dt immunity	24 V/ns at T_J = 125 °C - prevents false turn-on in noisy high-side configurations

Applications

Server SMPS Primary Switch	Industrial Induction Heater
Use Scenario: High-efficiency 1–3 kW server power supply operating at 100–300 kHz with active clamp or LLC topology. IC Role / Device Role / Timing Role: Main high-side switching transistor in primary bridge leg; handles 400 V DC bus and peak currents up to 62 A pulsed. Use Value: 500 V V_DS rating and 281 mJ E_AS ensure safe operation during transient overvoltage and short-circuit events without derating.	Use Scenario: Resonant inverter stage in 5–15 kW industrial induction heating systems with variable frequency control. IC Role / Device Role / Timing Role: Half-bridge switch driving series-resonant tank; subjected to repetitive hard switching and high di/dt stress. Use Value: Low Q_g (170 nC) and fast t_r/t_f (31/56 ns) enable efficient 20–100 kHz operation with minimal switching loss.
Welding Inverter Output Stage	PFC Boost Switch
Use Scenario: IGBT-replacement output stage in 3–8 kW arc welding inverters requiring high peak current capability. IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter delivering pulsed 80 A output with 100 μs–1 ms duty cycles. Use Value: 62 A pulsed drain current (I_DM) and rugged body diode support high-current freewheeling without secondary recovery failure.	Use Scenario: Active boost switch in universal-input (90–264 V AC) PFC front-end for telecom rectifiers and UPS systems. IC Role / Device Role / Timing Role: High-voltage switching element conducting 10–20 A average current at 65–100 kHz with 400 V DC output. Use Value: 0.25 Ω R_DS(on) limits conduction loss to <5 W at 20 A, enabling >98 % efficiency in 3 kW PFC designs.

Server SMPS Primary Switch

Industrial Induction Heater

Use Scenario: High-efficiency 1–3 kW server power supply operating at 100–300 kHz with active clamp or LLC topology.

IC Role / Device Role / Timing Role: Main high-side switching transistor in primary bridge leg; handles 400 V DC bus and peak currents up to 62 A pulsed.

Use Value: 500 V V_DS rating and 281 mJ E_AS ensure safe operation during transient overvoltage and short-circuit events without derating.

Use Scenario: Resonant inverter stage in 5–15 kW industrial induction heating systems with variable frequency control.

IC Role / Device Role / Timing Role: Half-bridge switch driving series-resonant tank; subjected to repetitive hard switching and high di/dt stress.

Use Value: Low Q_g (170 nC) and fast t_r/t_f (31/56 ns) enable efficient 20–100 kHz operation with minimal switching loss.

Welding Inverter Output Stage

PFC Boost Switch

Use Scenario: IGBT-replacement output stage in 3–8 kW arc welding inverters requiring high peak current capability.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter delivering pulsed 80 A output with 100 μs–1 ms duty cycles.

Use Value: 62 A pulsed drain current (I_DM) and rugged body diode support high-current freewheeling without secondary recovery failure.

Use Scenario: Active boost switch in universal-input (90–264 V AC) PFC front-end for telecom rectifiers and UPS systems.

IC Role / Device Role / Timing Role: High-voltage switching element conducting 10–20 A average current at 65–100 kHz with 400 V DC output.

Use Value: 0.25 Ω R_DS(on) limits conduction loss to <5 W at 20 A, enabling >98 % efficiency in 3 kW PFC designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF50	500 V, 16 A, R_DS(on) = 0.32 Ω, Q_g = 55 nC, TO-220 package	Lower current rating and higher on-resistance; smaller package limits thermal headroom	Preferred where board space is constrained and peak current ≤16 A; not suitable for 20 A continuous designs
IXFH40N50P	500 V, 40 A, R_DS(on) = 0.12 Ω, Q_g = 220 nC, TO-247 package	Higher current and lower R_DS(on), but 30 % higher gate charge increases driver complexity	Selected when >20 A continuous current or <0.2 Ω on-resistance is required; demands stronger gate driver

Compared with STP16NF50 and IXFH40N50P, the IRFP460BPBF delivers balanced trade-offs: sufficient 20 A current handling, proven 500 V ruggedness, and moderate 170 nC Q_g compatible with standard gate drivers - making it optimal for cost-sensitive 1–3 kW industrial and telecom power supplies.

Availability

IRFP460BPBF is available at Aetrix Electronics and suitable for server SMPS, industrial induction heating, and welding inverter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFP460BPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFP460BPBF belongs to Vishay's D Series Power MOSFET family, engineered for high-voltage switching in hard-switched and resonant power conversion systems where avalanche ruggedness and thermal stability are critical.

FAQ

What is the maximum continuous drain current of the IRFP460BPBF at 100 °C case temperature?

The IRFP460BPBF supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be verified against actual heatsink performance and ambient conditions in the final design. The IRFP460BPBF datasheet confirms this value under V_GS = 10 V bias.

Does the IRFP460BPBF have a RoHS-compliant termination?

Yes, the "PbF" suffix in IRFP460BPBF indicates lead (Pb)-free terminations compliant with RoHS Directive 2011/65/EU. However, the device is not halogen-free; for halogen-free compliance, Vishay offers SiHG460B-GE3 as an alternative part number per the Ordering Information table.

What is the gate threshold voltage range for the IRFP460BPBF?

The IRFP460BPBF has a gate-source threshold voltage (V_GS(th)) range of 2 V to 4 V at T_J = 25 °C and I_D = 250 μA, per the Static Specifications table. This ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious gate excitation.

Can the IRFP460BPBF replace older IRFP460 devices in existing designs?

Yes, the IRFP460BPBF is a direct drop-in replacement for the legacy IRFP460, sharing identical TO-247AC package, pinout, and electrical specifications including V_DS = 500 V, R_DS(on) = 0.25 Ω, and Q_g = 170 nC. The "PbF" suffix denotes updated lead-free terminations without functional change.

What is the typical reverse recovery time of the body diode in the IRFP460BPBF?

The typical reverse recovery time (t_rr) of the integral body diode in the IRFP460BPBF is 437 ns, measured at T_J = 25 °C, I_F = 10 A, dI/dt = 100 A/μs, and V_R = 20 V. This parameter is critical for evaluating freewheeling behavior in hard-switched converters and must be validated under actual operating conditions using the IRFP460BPBF's full datasheet test setup.

IRFP460BPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3094 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP460BPBF FAQ

1.How can I place an order for IRFP460BPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP460BPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP460BPBF reliable?

The price and inventory of IRFP460BPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP460BPBF is usually 5 days.

3.What payment methods are accepted for IRFP460BPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP460BPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP460BPBF?

IRFP460BPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP460BPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP460BPBF?

For technical support, including IRFP460BPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP460BPBF requirements.

6.How does Aetrix verify that IRFP460BPBF is sourced from the original manufacturer or authorized distributors?

All IRFP460BPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP460BPBF meets industry standards.

7.What is the process for return or replacement of IRFP460BPBF?

All IRFP460BPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP460BPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP460BPBF part is unused and in its original packaging.

Return procedure for IRFP460BPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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