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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPF30

Name: IRFPF30
Brand: Vishay Siliconix
SKU: IRFPF30
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPF30

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFPF30.pdf

Description:: MOSFET N-CH 900V 3.6A TO247-3

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Product details

Overview

IRFPF30 from Vishay Siliconix is a 900 V, 3.6 A N-channel power MOSFET in TO-247AC package, featuring 3.7 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating. It serves as a high-voltage switching element in offline SMPS, AC motor drives, and industrial inverters requiring ruggedized operation above 600 V.

For engineers reviewing the IRFPF30 datasheet, IRFPF30 pinout, IRFPF30 application, or IRFPF30 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 1.0 °C/W), body diode recovery characteristics (t_rr = 430–650 ns), and TO-247AC mechanical dimensions - all confirmed from Vishay's official S22-0057-Rev. C and 91360 package documents.

Technical Context

The IRFPF30 employs a third-generation planar vertical DMOS structure optimized for high-voltage blocking and fast switching with low gate charge. Its isolated central mounting hole and enhanced creepage distances meet commercial-industrial safety requirements, while dynamic dV/dt rating supports reliable operation in noisy high-side configurations.

It integrates a robust intrinsic body diode rated for 3.6 A continuous source-drain current and 1.8 V forward voltage at 25 °C, with reverse recovery charge Q_rr of 1.4–2.1 μC - enabling use in freewheeling and synchronous rectification roles without external diode supplementation in moderate-frequency topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports primary-side switching in universal-input offline converters up to 800 V DC bus.
R_DS(on)	3.7 Ω @ V_GS = 10 V - determines conduction loss in high-voltage, low-current applications (e.g., <4 A peak).
Q_g	78 nC - defines gate drive energy requirement; impacts switching loss and driver selection (e.g., 12 Ω gate resistor yields t_d(on) = 14 ns).
E_AS	170 mJ - enables unclamped inductive switching without external snubbers in flyback or resonant converters.
t_rr	430–650 ns - limits usable switching frequency in hard-switched topologies due to body diode recovery delay.
R_thJC	1.0 °C/W - allows 125 W dissipation at 100 °C case temperature; requires heatsink with ≤0.76 °C/W system thermal resistance for full-power operation.
I_D (T_C = 100 °C)	2.3 A - derated current capability under sustained high-temperature conditions typical in enclosed industrial enclosures.

Pinout & Package

IRFPF30 uses the TO-247AC package with isolated central mounting hole, 20.55 mm × 15.70 mm footprint, and 15.15 mm height. Thermal pad contour is optional; lead finish is uncontrolled per specification.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level drive; ±20 V absolute max rating protects against transient overvoltage during layout coupling.
2 (Drain)	High-voltage power terminal	Connected to drain metallization of die; electrically tied to metal tab - must be insulated from heatsink unless referenced to same potential.
3 (Source)	Power return reference	Serves as common node for gate drive return and load current return; low-inductance connection critical for EMI control.
4 (Drain)	Secondary drain connection	Redundant drain terminal for improved current sharing and reduced package inductance; paralleled internally with Pin 2.

Key Features

Feature	Design Value
Dynamic dV/dt rated	1.5 V/ns - prevents false turn-on during high dv/dt transients in bridge-leg configurations without added gate clamping.
Repetitive avalanche rated	13 mJ per pulse - supports reliable operation under short-circuit or overload conditions in motor drive protection circuits.
Isolated central mounting hole	3.61 mm diameter, 1.5° draft angle - enables mechanical grounding or insulation independent of electrical drain potential per JEDEC TO-247AC spec.
Fast switching	t_d(on) = 14 ns, t_f = 30 ns - reduces transition losses in 50–100 kHz SMPS designs when paired with appropriate gate driver.
Ease of paralleling	Positive R_DS(on) temperature coefficient - ensures current sharing stability across multiple IRFPF30 units without external ballast resistors.

Applications

Industrial Motor Drives	Offline Switch-Mode Power Supplies
Use Scenario: Three-phase inverter stage for 0.5–2 kW AC induction motors in HVAC and pump controls. IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT-like half-bridge configuration, operating at 4–16 kHz PWM frequency. Use Value: Repetitive avalanche rating (I_AR = 3.6 A) absorbs regenerative energy during rapid deceleration without external clamping.	Use Scenario: Primary switch in 100–300 W universal-input flyback converter for industrial instrumentation power rails. IC Role / Device Role / Timing Role: Main power switch handling 700 V DC link with 3.6 A peak current, switching at 65 kHz. Use Value: 170 mJ single-pulse avalanche energy eliminates need for RC snubber in cost-sensitive designs.
DC-DC Converters for Telecom	Lighting Ballasts & HID Drivers
Use Scenario: Isolated forward converter primary switch in 48 V telecom rectifier modules. IC Role / Device Role / Timing Role: Hard-switched main FET with 900 V V_DS margin for 400 V nominal bus under line surges. Use Value: R_thJC = 1.0 °C/W enables compact heatsinking in space-constrained 1U chassis.	Use Scenario: Resonant half-bridge switch in electronic ballast for 250–400 W high-intensity discharge lamps. IC Role / Device Role / Timing Role: High-voltage switching device sustaining >600 V DC bus and conducting lamp ignition pulses. Use Value: Body diode t_rr = 430–650 ns and Q_rr = 1.4–2.1 μC minimize dead-time losses and ringing during zero-voltage switching transitions.

Industrial Motor Drives

Offline Switch-Mode Power Supplies

Use Scenario: Three-phase inverter stage for 0.5–2 kW AC induction motors in HVAC and pump controls.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT-like half-bridge configuration, operating at 4–16 kHz PWM frequency.

Use Value: Repetitive avalanche rating (I_AR = 3.6 A) absorbs regenerative energy during rapid deceleration without external clamping.

Use Scenario: Primary switch in 100–300 W universal-input flyback converter for industrial instrumentation power rails.

IC Role / Device Role / Timing Role: Main power switch handling 700 V DC link with 3.6 A peak current, switching at 65 kHz.

Use Value: 170 mJ single-pulse avalanche energy eliminates need for RC snubber in cost-sensitive designs.

DC-DC Converters for Telecom

Lighting Ballasts & HID Drivers

Use Scenario: Isolated forward converter primary switch in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Hard-switched main FET with 900 V V_DS margin for 400 V nominal bus under line surges.

Use Value: R_thJC = 1.0 °C/W enables compact heatsinking in space-constrained 1U chassis.

Use Scenario: Resonant half-bridge switch in electronic ballast for 250–400 W high-intensity discharge lamps.

IC Role / Device Role / Timing Role: High-voltage switching device sustaining >600 V DC bus and conducting lamp ignition pulses.

Use Value: Body diode t_rr = 430–650 ns and Q_rr = 1.4–2.1 μC minimize dead-time losses and ringing during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW9NK90Z	900 V, 7.5 A, R_DS(on) = 1.4 Ω, Q_g = 65 nC, TO-247 package	Higher current rating and lower on-resistance but higher gate charge density; less rugged avalanche performance (E_AS = 120 mJ)	Prefer when higher continuous current (>4 A) and lower conduction loss dominate over avalanche robustness.
IXTH8N90L2	900 V, 8 A, R_DS(on) = 1.2 Ω, Q_g = 95 nC, TO-247 package	Enhanced mode L2 series with faster switching but no specified repetitive avalanche rating; higher gate charge increases driver demand	Select when fastest possible switching is required and avalanche stress is mitigated by circuit design.

Compared with STW9NK90Z and IXTH8N90L2, the IRFPF30 trades higher R_DS(on) and lower current rating for superior repetitive avalanche capability (13 mJ) and proven field reliability in unclamped inductive loads - making it preferred where fault tolerance outweighs raw efficiency.

Availability

IRFPF30 is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, and lighting ballasts requiring stable component supply and long-term lifecycle support.

Supply support for IRFPF30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFPF30 belongs to Vishay's third-generation high-voltage Power MOSFET product line, engineered for commercial-industrial applications demanding stable operation under repetitive avalanche stress and elevated temperature conditions.

FAQ

What is the maximum continuous drain current for IRFPF30 at 100 °C case temperature?

The IRFPF30 supports 2.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be validated against actual heatsink performance and ambient conditions in the target application. The IRFPF30 datasheet confirms this value under Note "a" for repetitive ratings limited by junction temperature.

Does IRFPF30 have a specified repetitive avalanche energy rating?

Yes, the IRFPF30 has a repetitive avalanche energy rating of 13 mJ, documented in the Absolute Maximum Ratings table. This value applies under conditions of repetitive rating with pulse width limited by maximum junction temperature, and is distinct from the single-pulse E_AS of 170 mJ. The IRFPF30's repetitive avalanche capability is explicitly validated per test condition "a" in the Vishay datasheet.

What is the gate-source threshold voltage range for IRFPF30?

The gate-source threshold voltage (V_GS(th)) for IRFPF30 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range indicates the minimum gate voltage required to initiate conduction, and confirms compatibility with standard 10 V gate drivers. The IRFPF30 does not qualify as a logic-level MOSFET, as its upper threshold exceeds typical 2.5 V logic thresholds.

How is the TO-247AC package of IRFPF30 different from TO-218?

The TO-247AC package used by IRFPF30 features an isolated central mounting hole - a key improvement over the earlier TO-218 - enabling mechanical attachment without electrical connection to the drain. It also provides greater creepage distances between pins to meet safety standards. The IRFPF30 package drawing (Document 91360) confirms this distinction and specifies dimensional tolerances per JEDEC outline variation AC.

What is the typical body diode reverse recovery time for IRFPF30?

The typical body diode reverse recovery time (t_rr) for IRFPF30 is 430 ns, with a maximum of 650 ns, measured at T_J = 25 °C, I_F = 3.6 A, and dI/dt = 100 A/μs. This parameter directly affects switching losses and EMI in hard-switched topologies. The IRFPF30 datasheet lists t_rr in the Drain-Source Body Diode Characteristics table and correlates it with Q_rr = 1.4–2.1 μC.

IRFPF30 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFPF30 FAQ

1.How can I place an order for IRFPF30 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPF30 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPF30 reliable?

The price and inventory of IRFPF30 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPF30 is usually 5 days.

3.What payment methods are accepted for IRFPF30?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPF30 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPF30?

IRFPF30 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPF30 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPF30?

For technical support, including IRFPF30 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPF30 requirements.

6.How does Aetrix verify that IRFPF30 is sourced from the original manufacturer or authorized distributors?

All IRFPF30 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPF30 meets industry standards.

7.What is the process for return or replacement of IRFPF30?

All IRFPF30 units undergo pre-shipment inspection (PSI). If there is an issue with IRFPF30, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPF30 part is unused and in its original packaging.

Return procedure for IRFPF30:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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