Vishay Siliconix IRFPF50PBF

Overview

IRFPF50PBF from Vishay Siliconix is a 900 V, 6.7 A N-channel power MOSFET in TO-247AC package, featuring 1.6 Ω R_DS(on) at V_GS = 10 V, 200 nC total gate charge, and repetitive avalanche rating-designed for high-voltage switching in offline SMPS, motor drives, and industrial inverters.

For engineers reviewing the IRFPF50PBF datasheet, IRFPF50PBF pinout, IRFPF50PBF application, or IRFPF50PBF equivalent, key selection criteria include its 900 V blocking capability, isolated mounting hole for thermal management, dV/dt ruggedness up to 1.5 V/ns, and compatibility with standard gate drivers due to simple drive requirements.

Technical Context

This third-generation planar vertical power MOSFET uses ruggedized silicon design optimized for unclamped inductive switching (UIS), supporting repetitive avalanche energy of 19 mJ and single-pulse avalanche energy up to 880 mJ. Its body diode exhibits 610–920 ns reverse recovery time and 3.2–4.8 μC Q_rr, enabling moderate-frequency hard-switched operation.

The device integrates low-inductance internal construction (L_D = 5.0 nH, L_S = 13 nH) and features fast switching (t_d(on) = 20 ns, t_r = 34 ns, t_d(off) = 130 ns) with dynamic dV/dt rating-critical for reliable operation in high-noise, high-dV/dt environments such as flyback and resonant converters.

Key Specifications

Pinout & Package

IRFPF50PBF is housed in a TO-247AC package with isolated central mounting hole, 3-pin configuration (Gate, Drain, Source), and creepage distances compliant with industrial safety standards. The package provides mechanical stability and enhanced thermal dissipation versus TO-220AB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW9NK90Z and IXTH12N90L2, IRFPF50PBF offers superior avalanche ruggedness and mechanical isolation for safety-critical industrial systems, trading off some conduction and switching efficiency for proven reliability in high-stress transient conditions.

Availability

IRFPF50PBF is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, DC-DC boost converters, and uninterruptible power systems requiring stable component supply and long-term manufacturability.

Supply support for IRFPF50PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFPF50PBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for demanding industrial and commercial power conversion applications where avalanche capability, thermal stability, and safety-compliant packaging are essential.

FAQ

What is the maximum continuous drain current for IRFPF50PBF at 100 °C case temperature?

The maximum continuous drain current for IRFPF50PBF is 4.2 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be applied in thermal design calculations alongside R_thJC = 0.65 °C/W to ensure safe junction temperature operation below 150 °C. IRFPF50PBF maintains this rating under steady-state conduction with proper heatsinking.

Does IRFPF50PBF have an integrated body diode, and what are its key parameters?

Yes, IRFPF50PBF includes an integral reverse p–n junction body diode. Key parameters include continuous source-drain current of 6.7 A, pulsed forward current of 27 A, forward voltage of 1.8 V at 6.7 A and 25 °C, reverse recovery time of 610–920 ns, and reverse recovery charge of 3.2–4.8 μC. These values are measured under defined test conditions and directly impact performance in freewheeling and synchronous rectification roles. IRFPF50PBF body diode characteristics are fully specified in the datasheet.

Can IRFPF50PBF be used in parallel configurations, and what design considerations apply?

Yes, IRFPF50PBF is designed for ease of paralleling, as noted in its features list. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout to minimize loop inductance, and individual gate resistors to damp oscillations. Thermal coupling between devices must also be managed to avoid current imbalance due to R_DS(on) positive temperature coefficient. IRFPF50PBF's consistent threshold voltage (2.0–4.0 V) and low gate charge variation support stable current sharing when implemented correctly.

What is the gate-source voltage limit for IRFPF50PBF, and why is it critical?

The gate-source voltage limit for IRFPF50PBF is ±20 V, as stated in the Absolute Maximum Ratings. Exceeding +20 V risks permanent gate oxide damage, while exceeding −20 V may cause gate leakage or threshold shift. This rating governs driver selection and transient protection design-especially important in high-noise environments where ringing or coupling could induce gate overvoltage. IRFPF50PBF gate drive circuits must include clamping (e.g., Zener diodes) to stay within this limit under all operating conditions.

How does the isolated mounting hole in the TO-247AC package benefit IRFPF50PBF applications?

The isolated mounting hole in the TO-247AC package electrically isolates the drain-connected metal tab from the heatsink, eliminating the need for insulating hardware and reducing thermal resistance compared to insulated-mount alternatives. This feature simplifies mechanical assembly, improves thermal performance, and enhances safety compliance in high-voltage systems. For IRFPF50PBF, it directly supports reliable operation in grounded-heatsink configurations common in industrial inverters and SMPS where drain potentials exceed 400 V.