Vishay Siliconix IRFR010TR

Overview

IRFR010TR from Vishay Siliconix is a 50 V, 8.2 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, featuring 0.20 Ω R_DS(on) at V_GS = 10 V, 10 nC total gate charge, and 2.0 V/ns peak diode recovery dV/dt - optimized for DC-DC converters, computer power supplies, and peripheral switching where low drive current and fast switching are critical.

For engineers reviewing the IRFR010TR datasheet, IRFR010TR pinout, IRFR010TR application, or IRFR010TR equivalent, this part supports high-volume PCB assembly with verified thermal performance (R_thJC = 5.0 °C/W), stable on-resistance over temperature, and ease of paralleling in compact power stages.

Technical Context

The IRFR010TR uses planar V-groove MOSFET technology to achieve low R_DS(on) while maintaining robust avalanche capability (I_AS = 1.5 A) and superior body diode recovery (t_rr = 41–190 ns). Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

Designed for surface-mount operation, it leverages DPAK's low-inductance layout to minimize switching losses - internal drain and source inductances are specified at 4.5 nH and 7.5 nH respectively, enabling clean voltage transitions under dI/dt ≤ 130 A/μs conditions.

Key Specifications

Pinout & Package

DPAK (TO-252) thermally enhanced surface-mount package with exposed drain pad for low thermal resistance; 3-terminal configuration (G, D, S) with G–D–S pin order when viewed from top with marking side up and leads pointing downward.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFR010TR, SiHFR010TR-GE3 offers identical electrical and thermal performance with updated environmental compliance, while IRLR010TRPbF trades voltage rating and on-resistance for lower cost in sub-32 V designs - neither is pin-compatible without verifying layout clearance for different marking or tape/reel orientation.

Availability

IRFR010TR is available at Aetrix Electronics and suitable for computer power supplies, telecom DC-DC converters, and industrial motor drivers requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for IRFR010TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, computing, and automotive markets.

The IRFR010TR belongs to Vishay's legacy "FR" series of surface-mount power MOSFETs engineered for high-volume, cost-sensitive power conversion applications demanding low R_DS(on), fast switching, and proven manufacturability in DPAK.

FAQ

What is the maximum continuous drain current for IRFR010TR at 100 °C case temperature?

The IRFR010TR supports 5.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation - designers must ensure adequate PCB copper area or heatsinking to maintain junction temperature below 150 °C when operating near this limit. The IRFR010TR's R_thJC of 5.0 °C/W enables predictable thermal modeling in thermal-aware layouts.

Does IRFR010TR have a built-in body diode, and what are its key parameters?

Yes, the IRFR010TR integrates a monolithic body diode with typical forward voltage V_SD = 1.6 V at I_S = 8.2 A and T_J = 25 °C. Its reverse recovery time t_rr ranges from 41 ns (typical) to 190 ns (max), and peak diode recovery dV/dt is rated at 2.0 V/ns. These values are critical for synchronous rectification and freewheeling paths - the IRFR010TR's body diode performance is explicitly characterized in the datasheet under defined test conditions (I_F = 7.3 A, dI/dt = 100 A/μs).

Is IRFR010TR suitable for logic-level gate drive applications?

The IRFR010TR is not a logic-level MOSFET; its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and it is fully enhanced at V_GS = 10 V. While it may partially turn on with 5 V drive, R_DS(on) is not guaranteed below 10 V - the datasheet specifies 0.20 Ω only at V_GS = 10 V. For reliable low-R_DS(on) operation, the IRFR010TR requires a 10 V gate drive, making it incompatible with 3.3 V logic systems without level-shifting. The IRFR010TR is intended for standard 10 V gate driver circuits.

What is the avalanche rating of IRFR010TR, and how is it tested?

The IRFR010TR has an unclamped inductive avalanche current rating I_AS = 1.5 A, tested per JEDEC JESD24-11 with pulse width ≤ 300 μs and duty cycle ≤ 2 %. This rating applies to single-pulse energy absorption during inductive switching transients - such as relay coil de-energization or motor phase commutation - where the device clamps V_DS to prevent destructive breakdown. The IRFR010TR's avalanche capability is validated across temperature and is not intended for repetitive avalanche operation.

How does the DPAK (TO-252) package of IRFR010TR impact PCB layout and thermal design?

The IRFR010TR's DPAK package features an exposed drain pad that must be soldered to a large copper pour for effective heat dissipation - Vishay recommends minimum pad dimensions of 0.224" × 0.420" (5.69 mm × 10.67 mm) per Application Note 826. Thermal resistance from junction to case is 5.0 °C/W, but junction-to-ambient depends heavily on PCB copper area and layer count; with 1"² FR-4, R_thJA is 110 °C/W. Proper layout of the IRFR010TR's DPAK footprint directly impacts maximum allowable continuous current and reliability in thermal-critical applications.