Vishay Siliconix IRFR010TRLPBF

Overview

IRFR010TRLPBF from Vishay Siliconix is an N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for 50 V V_DS, 8.2 A continuous drain current at T_C = 25 °C, and 0.20 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching (t_r = 33–50 ns), low gate charge (Q_g = 10 nC max), and robust body diode recovery (dV/dt = 2.0 V/ns), making it suitable for DC-DC converters and peripheral power switches.

For engineers reviewing the IRFR010TRLPBF datasheet, IRFR010TRLPBF pinout, IRFR010TRLPBF application, or IRFR010TRLPBF equivalent, key selection criteria include its DPAK thermal performance (R_thJC = 5.0 °C/W), logic-compatible gate threshold (V_GS(th) = 2.0–4.0 V), and avalanche-rated operation (I_AS = 1.5 A) in compact high-volume power stages.

Technical Context

This device uses Vishay's advanced planar trench MOSFET process to achieve low on-resistance with high transconductance (g_fs = 3.1 S typ.) and stable parametric behavior over temperature. Its internal structure integrates a fast-recovery body diode with t_rr = 41–190 ns and Q_rr = 0.78 μC max, enabling reliable unclamped inductive switching.

The DPAK package provides low-inductance source/drain paths (L_S = 7.5 nH, L_D = 4.5 nH) and direct thermal conduction from die to PCB copper, supporting high-current pulse handling (I_DM = 33 A) without heatsink in thermally optimized layouts.

Key Specifications

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S) with G and S on same side, D on opposite side and soldered to large copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with SiHFR010-GE3, IRFR010TRLPBF shares identical electrical specs but differs in tape-and-reel packaging (TRLPbF vs. GE3) and traceability labeling; versus IRLR010TRPbF, IRFR010TRLPBF offers 9% lower R_DS(on) and 9% lower Q_g, directly improving power density in space-constrained converters.

Availability

IRFR010TRLPBF is available at Aetrix Electronics and suitable for computer power delivery, telecom DC-DC modules, and industrial peripheral switching requiring stable component supply across multi-year production cycles.

Supply support for IRFR010TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFR/SiHFR series targets high-volume surface-mount power switching, emphasizing low R_DS(on), fast switching, and thermal robustness in DPAK for cost-sensitive industrial and consumer systems.

FAQ

What is the maximum continuous drain current for IRFR010TRLPBF at 100 °C case temperature?

The maximum continuous drain current for IRFR010TRLPBF is 5.2 A at T_C = 100 °C, derated linearly from 8.2 A at 25 °C using the 0.20 W/°C derating factor. This value reflects safe operation under sustained thermal load with adequate PCB copper area, and is validated per Fig. 8 in the official Vishay datasheet S21-0466-Rev. C.

Does IRFR010TRLPBF have a built-in body diode, and what are its key recovery parameters?

Yes, IRFR010TRLPBF integrates a monolithic body diode with t_rr = 41–190 ns and Q_rr = 0.78 μC max at T_J = 25 °C, IF = 7.3 A, and dI/dt = 100 A/μs. Its peak dV/dt capability is rated at 2.0 V/ns, enabling reliable operation in hard-commutated topologies like synchronous buck where reverse recovery stress is critical. These values are measured and specified in the "Drain-Source Body Diode Characteristics" section of the IRFR010TRLPBF datasheet.

What is the gate threshold voltage range for IRFR010TRLPBF, and is it compatible with 3.3 V logic?

The gate threshold voltage V_GS(th) for IRFR010TRLPBF is specified from 2.0 V to 4.0 V at T_J = 25 °C, confirming logic-level compatibility. While it will turn on with 3.3 V drive, full enhancement (to achieve R_DS(on) ≤ 0.20 Ω) requires V_GS ≥ 10 V. For 3.3 V-only systems, IRFR010TRLPBF should be paired with a gate driver or level shifter - its datasheet does not guarantee R_DS(on) performance below V_GS = 10 V.

What is the thermal resistance from junction to case (R_thJC) for IRFR010TRLPBF, and how is it measured?

The maximum junction-to-case thermal resistance R_thJC for IRFR010TRLPBF is 5.0 °C/W, measured from the silicon die to the drain metal pad (case) under steady-state conditions. This value assumes proper soldering of the exposed drain pad to a minimum 1"² FR-4 PCB copper area, as defined in the Thermal Resistance Ratings table of the IRFR010TRLPBF datasheet S21-0466-Rev. C. It does not include PCB-to-ambient resistance.

Is IRFR010TRLPBF suitable for avalanche energy applications, and what is its rated single-pulse avalanche current?

Yes, IRFR010TRLPBF is rated for repetitive unclamped inductive switching with I_AS = 1.5 A (single-pulse, pulse width ≤ 300 μs, duty cycle ≤ 2 %). This rating is verified per the test circuit in Fig. 12a of the datasheet and confirms capability to absorb inductive energy without failure in flyback or active-clamp topologies where voltage overshoot occurs. The device's SOA curve (Fig. 7) further validates this ruggedness.