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Vishay Siliconix IRFR014PBF
- Part No.:
- IRFR014PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR014PBF.pdf
- Description:
- MOSFET N-CH 60V 7.7A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,978
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Product details
Overview
IRFR014PBF from Vishay Siliconix is a 60 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.20 Ω RDS(on) at VGS = 10 V, 11 nC total gate charge, and 27.4 mJ single-pulse avalanche energy - used in DC-DC converters, motor drivers, and load switches where fast switching and ruggedness are required.
For engineers reviewing the IRFR014PBF datasheet, IRFR014PBF pinout, IRFR014PBF application, or IRFR014PBF equivalent, key selection considerations include its 60 V VDS, 0.20 Ω on-resistance at 10 V drive, DPAK thermal performance (RthJC = 5.0 °C/W), body diode recovery time (70–140 ns), and Pb-free/halogen-free compliance per Vishay S21-0466-Rev. F.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon design for low conduction loss and fast switching with controlled dV/dt (4.5 V/ns peak diode recovery). Its dynamic parameters - Qg = 11 nC, Qgd = 5.8 nC, Ciss = 300 pF - support efficient gate driving in high-frequency SMPS topologies.
The device integrates a robust intrinsic body diode rated for 7.7 A continuous source-drain current and 31 A pulsed current, with reverse recovery charge Qrr of 0.20–0.40 μC - enabling reliable operation in synchronous rectification and freewheeling applications without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage compatible with 48 V bus systems and industrial 24–48 V DC supplies |
| RDS(on) | 0.20 Ω @ VGS = 10 V - enables ≤1.1 W conduction loss at 7.7 A, suitable for compact thermal designs |
| Qg | 11 nC - low gate charge reduces driver power demand and supports >500 kHz switching in buck converters |
| EAS | 27.4 mJ - unclamped inductive avalanche rating allows safe operation under transient overcurrent conditions |
| RthJC | 5.0 °C/W - junction-to-case thermal resistance enables 25 W power dissipation with minimal heatsink requirement |
| trr | 70–140 ns - body diode reverse recovery time supports efficient freewheeling in hard-switched topologies |
| ID (TC = 100 °C) | 4.9 A - derated continuous current confirms stable operation at elevated ambient temperatures |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for PCB heat spreading and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V logic-level drive to fully enhance channel; threshold voltage 2.0–4.0 V ensures compatibility with standard microcontroller GPIO |
| D (Drain) | High-side switch node | Connected to exposed copper pad on bottom of package - serves as primary thermal path and high-current return path |
| S (Source) | Reference and return | Provides ground reference for gate drive and carries full load current; forms Kelvin sense point for accurate current monitoring |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 4.5 V/ns - prevents spurious turn-on during high-speed switching transients in noisy power environments |
| Fast switching | td(on) = 10 ns, tr = 50 ns, td(off) = 13 ns - minimizes transition losses in high-frequency DC-DC converters |
| Ease of paralleling | Positive temperature coefficient of RDS(on) - enables natural current sharing across multiple devices without ballasting resistors |
| Surface-mount (DPAK) | Compatible with vapor phase, infrared, and wave soldering - supports automated assembly and high-reliability PCB mounting |
| Ruggedized device design | 27.4 mJ EAS and 31 A IDM - withstands inductive kickback and short-circuit events in motor control and power supply protection |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12–48 V input to 3.3–12 V output conversion in telecom and industrial power modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with precise dead-time control. Use Value: 0.20 Ω RDS(on) and 11 nC Qg reduce conduction and switching losses, improving efficiency by ≥1.2% vs. higher-RDS(on) alternatives at 5 A load. |
Use Scenario: H-bridge half-bridge leg for 24 V brushed motor control in factory automation actuators. IC Role / Device Role / Timing Role: High-current quadrant switch handling bidirectional motor current up to 7.7 A continuous. Use Value: 27.4 mJ avalanche energy and 70–140 ns trr ensure reliable commutation during rapid direction reversal without external snubbers. |
| Hot-Swap Load Switch | LED Constant-Current Driver |
Use Scenario: Inrush-limited 24–48 V board-level power sequencing in network equipment backplanes. IC Role / Device Role / Timing Role: Main pass element controlled via gate resistor to limit dI/dt during hot-plug insertion. Use Value: 60 V VDS headroom and 4.9 A derated current at 100 °C enable robust operation under sustained 3 A load at 70 °C ambient. |
Use Scenario: Dimmable constant-current LED string driver for architectural lighting with PWM dimming. IC Role / Device Role / Timing Role: Low-side PWM switch modulating LED current at 1–20 kHz with minimal EMI. Use Value: Fast 50 ns rise time and low 5.8 nC Qgd suppress switching noise, reducing conducted EMI by ≥6 dBμV in Class B compliance testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR014PBF | Same 60 V/7.7 A rating but in smaller DPAK variant with lower RDS(on) (0.16 Ω) and reduced Qg (9.5 nC); identical pinout | Better efficiency at light-to-moderate loads; slightly lower thermal margin due to reduced copper area | Select IRFR014PBF when higher avalanche robustness (27.4 mJ vs. 22 mJ) and proven field reliability in industrial motor drives are prioritized |
| SiHFR014-GE3 | Identical electrical specs and DPAK package; Vishay's newer halogen-free version with same RDS(on), Qg, and EAS | No functional difference; qualified for RoHS-compliant and halogen-free manufacturing lines | Choose SiHFR014-GE3 for new designs requiring full halogen-free compliance; IRFR014PBF remains valid for legacy production and mixed-material BOMs |
Compared with IRFR014PBF, IRLR014PBF offers marginally better conduction efficiency but less avalanche margin, while SiHFR014-GE3 delivers identical performance with updated environmental compliance - making IRFR014PBF the optimal choice for cost-sensitive, thermally demanding, or long-lifecycle industrial applications where legacy qualification is required.
Availability
IRFR014PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and hot-swap load switches requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-authorized channels.
Supply support for IRFR014PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability for industrial and automotive markets.
The IRFR014PBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in space-constrained surface-mount power systems.
FAQ
What is the maximum continuous drain current for IRFR014PBF at 100 °C case temperature?
The IRFR014PBF supports 4.9 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and ensures safe operation within the 150 °C maximum junction temperature limit. The IRFR014PBF maintains stable RDS(on) performance across this range due to its positive temperature coefficient.
Does IRFR014PBF require a gate driver IC, or can it be driven directly from a microcontroller?
The IRFR014PBF has a gate threshold voltage of 2.0–4.0 V and is fully enhanced at VGS = 10 V, making it compatible with direct drive from 3.3 V or 5 V microcontroller GPIO pins when paired with appropriate series gate resistance (typically 10–22 Ω) to control slew rate. However, for high-frequency (>200 kHz) or high-current (>5 A) applications, a dedicated gate driver improves switching speed and reduces losses. The IRFR014PBF's 11 nC Qg makes it responsive to both approaches.
What is the avalanche capability of IRFR014PBF, and how is it tested?
The IRFR014PBF is rated for 27.4 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = 25 V, starting TJ = 25 °C, L = 924 μH, and Rg = 25 Ω. This rating is verified per JEDEC-standard unclamped inductive switching (UIS) tests and confirms the device's ability to absorb inductive energy safely during fault conditions such as short circuits or transformer saturation. The IRFR014PBF's ruggedized silicon design ensures repeatable performance across its full temperature range.
Is IRFR014PBF pin-compatible with other DPAK N-channel MOSFETs like IRLR014PBF?
Yes, the IRFR014PBF is pin-compatible with IRLR014PBF and other standard DPAK (TO-252) 3-lead N-channel MOSFETs - all share identical G-D-S terminal arrangement and mechanical footprint per JEDEC outline. Layouts designed for IRLR014PBF can accommodate IRFR014PBF without modification, though thermal and electrical performance differences (e.g., RDS(on), Qg, EAS) must be validated in the final system. The IRFR014PBF's DPAK package dimensions conform to Vishay document 71197.
What is the body diode forward voltage of IRFR014PBF, and how does it affect freewheeling performance?
The IRFR014PBF body diode exhibits a typical forward voltage (VSD) of 1.6 V at TJ = 25 °C and IS = 7.7 A with VGS = 0 V. Its reverse recovery time (trr) is 70–140 ns, and reverse recovery charge (Qrr) is 0.20–0.40 μC. These values enable efficient freewheeling in non-synchronous buck converters and H-bridge motor drives, though synchronous rectification using a second MOSFET is recommended for highest efficiency. The IRFR014PBF's diode characteristics are fully characterized in the Vishay S21-0466 datasheet.
IRFR014PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR014PBF FAQ
1.How can I place an order for IRFR014PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR014PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR014PBF reliable?
The price and inventory of IRFR014PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR014PBF is usually 5 days.
3.What payment methods are accepted for IRFR014PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR014PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR014PBF?
IRFR014PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR014PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR014PBF?
For technical support, including IRFR014PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR014PBF requirements.
6.How does Aetrix verify that IRFR014PBF is sourced from the original manufacturer or authorized distributors?
All IRFR014PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR014PBF meets industry standards.
7.What is the process for return or replacement of IRFR014PBF?
All IRFR014PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR014PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR014PBF part is unused and in its original packaging.
Return procedure for IRFR014PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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