Infineon Technologies IRFR1010ZTRPBF
- Part No.:
- IRFR1010ZTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR1010ZTRPBF.pdf
- Description:
- MOSFET N-CH 55V 42A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:6,063
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Product details
Overview
IRFR1010ZTRPBF from Infineon Technologies is a 55V, 42A N-channel DPAK-packaged Power MOSFET with 7.5mΩ RDS(on) at VGS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and power supplies.
For engineers reviewing the IRFR1010ZTRPBF datasheet, IRFR1010ZTRPBF pinout, IRFR1010ZTRPBF application, or IRFR1010ZTRPBF equivalent, key selection criteria include its low conduction loss (5.8–7.5mΩ), fast switching (td(on) = 17ns, tf = 48ns), body diode recovery (trr = 24–36ns), and thermal robustness (RθJC = 1.11°C/W).
Technical Context
This MOSFET employs advanced HEXFET® silicon processing to minimize on-resistance per die area while maintaining ruggedness. Its gate charge profile (Qg = 63–95nC, Qgd = 23nC) supports efficient hard-switching in buck and half-bridge topologies up to several hundred kHz.
The integrated body diode exhibits low forward voltage (VSD ≤ 1.3V at 42A) and controlled reverse recovery (Qrr = 20–30nC), enabling reliable operation in synchronous rectification and freewheeling roles without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55V - Maximum blocking voltage before avalanche; defines safe operating range in 48V bus systems. |
| RDS(on) | 5.8–7.5mΩ @ VGS = 10V - Directly determines I²R conduction loss; enables <1.3W loss at 42A continuous. |
| ID | 42A @ TC = 25°C - Continuous current rating under ideal heatsinking; derates to ~25A at TC = 100°C. |
| EAS | 91mJ (tested) - Single-pulse avalanche energy capability; allows unclamped inductive turn-off without failure. |
| tr/tf | 76ns/48ns - Rise/fall times at VDD = 28V, ID = 42A, RG = 7.6Ω; sets minimum practical switching period. |
| RθJC | 1.11°C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink with predictable ΔTJ. |
| Qg | 63–95nC - Total gate charge; determines driver current requirement (e.g., 1A peak for 100ns turn-on). |
Pinout & Package
IRFR1010ZTRPBF is housed in a surface-mount DPAK (TO-252AA) package with three terminals: Drain (tab), Source (pin 2), and Gate (pin 1). The exposed drain pad provides low-inductance, high-current path and primary thermal conduction path to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current sink / high-side switch node | Electrically and thermally connected to PCB copper pour; requires solder mask opening and thermal vias. |
| Source (Pin 2) | Reference node for gate drive and current sensing | Low-inductance return path; critical for stable gate control and accurate RDS(on)-based current monitoring. |
| Gate (Pin 1) | Control input for channel modulation | High-impedance input requiring <100nC charge to fully enhance; sensitive to ringing due to LS = 7.5nH. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 5.8mΩ typical enables >96% efficiency in 12V→5V 20A buck converters at full load. |
| 175°C rated junction | Allows sustained operation in sealed enclosures or high-ambient industrial environments without derating. |
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching (e.g., relay coil snubbing, solenoid drivers). |
| Fast body diode recovery | trr = 24ns ensures minimal shoot-through risk in synchronous rectifiers operating above 200kHz. |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020D reflow profile; compatible with standard Pb-free assembly processes. |
Applications
| DC-DC Buck Converter | Brushless DC Motor Driver |
|---|---|
Use Scenario: High-current step-down conversion in telecom power shelves and server VRMs. IC Role / Device Role: Synchronous rectifier switch in low-side position, replacing Schottky diode. Use Value: Reduces conduction loss by 65% vs. 40V Schottky, lowering thermal stress and improving full-load efficiency from 92% to 95.8%. | Use Scenario: Half-bridge leg in 24–48V BLDC drives for HVAC blowers and power tools. IC Role / Device Role: High-side or low-side switching element handling 30A peak phase current. Use Value: Withstands 100A+ pulsed currents during stall conditions and supports 10kHz PWM without thermal runaway. |
| Industrial Power Supply | LED Constant-Current Driver |
Use Scenario: Primary-side switching in 300W open-frame AC-DC supplies with active PFC front-end. IC Role / Device Role: Main switch in LLC resonant half-bridge secondary synchronous rectification stage. Use Value: Low Qgd/Qg ratio (23/63nC) minimizes Miller-induced false turn-on during high dv/dt transitions. | Use Scenario: Dimmable constant-current LED driver for architectural lighting (10–50V, 3–7A strings). IC Role / Device Role: PWM-controlled current shunt switch regulating average LED current. Use Value: Fast tf (48ns) and low Coss (470pF) enable clean 1–10kHz dimming waveforms with <1% current ripple. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL100N5LF6AG | RDS(on) = 4.5mΩ @ 10V, but only rated to 150°C junction; higher Qg (110nC). | Better conduction loss at low TJ, but less suitable for sustained high-temp operation. | Prefer when ambient <85°C and peak efficiency >97% is required; avoid in sealed enclosures. |
| ON Semiconductor NTMFS5C673NL | RDS(on) = 6.7mΩ @ 10V, 175°C rated, but DFN5x6 package limits thermal mass and heatsinking flexibility. | Higher power density but lower transient thermal capacity than DPAK. | Choose for space-constrained designs where PCB area is premium and airflow is guaranteed. |
Compared with STL100N5LF6AG and NTMFS5C673NL, IRFR1010ZTRPBF offers the best balance of ruggedness (175°C + repetitive avalanche), thermal interface simplicity (DPAK tab), and gate drive compatibility (moderate Qg), making it optimal for industrial-grade power stages where reliability trumps marginal efficiency gains.
Availability
IRFR1010ZTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFR1010ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and consumer power conversion systems where thermal resilience and avalanche robustness are mandatory.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFR1010ZTRPBF supports 25A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be verified against actual board layout and heatsinking in the target application.
Does this MOSFET require a gate resistor for stability?
Yes - a series gate resistor (typically 5–15Ω) is recommended to dampen parasitic oscillation caused by gate-source inductance (LS = 7.5nH) and Miller capacitance (Crss = 250pF), especially when driven by high-speed controllers or in high-dv/dt environments.
Can IRFR1010ZTRPBF replace IRFR1010PBF in existing designs?
Yes - IRFR1010ZTRPBF is the lead-free, RoHS-compliant successor to IRFR1010PBF, sharing identical electrical specifications, pinout, and package. No layout or firmware changes are needed, though reflow profile must comply with J-STD-020D for Pb-free soldering.
Is the body diode suitable for reverse recovery in synchronous rectification?
Yes - the integral body diode has trr = 24–36ns and Qrr = 20–30nC, enabling reliable synchronous rectification up to 300kHz in buck converters. However, zero-voltage switching (ZVS) or adaptive dead-time control is advised to minimize commutation loss.
IRFR1010ZTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2840 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR1010ZTRPBF FAQ
1.How can I place an order for IRFR1010ZTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR1010ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR1010ZTRPBF reliable?
The price and inventory of IRFR1010ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1010ZTRPBF is usually 5 days.
3.What payment methods are accepted for IRFR1010ZTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1010ZTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR1010ZTRPBF?
IRFR1010ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR1010ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR1010ZTRPBF?
For technical support, including IRFR1010ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1010ZTRPBF requirements.
6.How does Aetrix verify that IRFR1010ZTRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR1010ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1010ZTRPBF meets industry standards.
7.What is the process for return or replacement of IRFR1010ZTRPBF?
All IRFR1010ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1010ZTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR1010ZTRPBF part is unused and in its original packaging.
Return procedure for IRFR1010ZTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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