Vishay Siliconix IRFR120PBF-BE3
- Part No.:
- IRFR120PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR120PBF-BE3.pdf
- Description:
- MOSFET N-CH 100V 7.7A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:5,925
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Product details
Overview
IRFR120PBF-BE3 from Vishay Siliconix is a 100 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.27 Ω RDS(on) at VGS = 10 V, 16 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR120PBF-BE3 datasheet, IRFR120PBF-BE3 pinout, IRFR120PBF-BE3 application, or IRFR120PBF-BE3 equivalent, key selection criteria include its 100 V VDS, 0.27 Ω on-resistance, 16 nC Qg, 42 W PD (TC), and DPAK thermal performance with RthJC = 3.0 °C/W.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon process and package design to achieve fast switching (td(on) = 6.8 ns, tf = 17 ns) while maintaining ruggedness via 210 mJ single-pulse avalanche energy and 7.7 A repetitive avalanche current capability.
Its dynamic dV/dt rating of 5.5 V/ns and body diode recovery time (trr = 130–260 ns) support reliable operation in inductive switching circuits; gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 10 V gate drivers and enables stable turn-on under varying temperature conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 80 V DC with margin for transients in industrial SMPS. |
| RDS(on) @ VGS = 10 V | 0.27 Ω - limits conduction loss to ≤1.0 W at 6 A continuous drain current in PCB-mounted designs. |
| Qg | 16 nC - determines gate drive power requirement; compatible with low-current drivers like TC4427 or UCC27531. |
| ID @ TC = 25 °C | 7.7 A - enables use in 10–15 W load-switching applications without heatsink when mounted on 1" FR-4 PCB. |
| EAS | 210 mJ - allows safe unclamped inductive switching in relay drivers or solenoid controls without external snubbers. |
| RthJC | 3.0 °C/W - enables direct thermal coupling to copper pour or heatsink for high-duty-cycle operation above 2 A. |
| tr/tf | 27 ns / 17 ns - reduces switching losses below 500 kHz in synchronous buck stages with minimal EMI impact. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for automated assembly and high-current PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 10 V logic-level drive; 4.4 nC Qgs enables fast turn-on with <10 Ω series resistance. |
| D (Drain) | High-side power output | Internally connected to exposed thermal pad; must be soldered to ≥1 cm² copper area for RthJA ≤ 50 °C/W. |
| S (Source) | Power return reference | Provides low-inductance source path; internal LS = 7.5 nH minimizes shoot-through risk in half-bridge layouts. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 7.7 A IAR and 4.2 mJ EAR enable robust operation in flyback snubberless designs without derating. |
| Dynamic dV/dt immunity | 5.5 V/ns rating prevents false turn-on during high-slew-rate switching in motor drives or inverters. |
| Fast switching | 6.8 ns td(on), 17 ns tf reduce total switching loss to <150 µJ at 12 VGS, 5 A, 100 VDS. |
| Surface-mount (DPAK) | TO-252 footprint supports vapor-phase reflow; thermal pad improves power handling by 3× vs. SO-8 equivalents. |
| Low Qgd/Qg ratio | 7.7/16 = 48 % - enhances Miller immunity and simplifies gate driver selection for hard-switched topologies. |
Applications
| DC-DC Converter High-Side Switch | Industrial Motor Driver |
|---|---|
Use Scenario: Synchronous buck converter in 24 V input industrial PLC power module. IC Role / Device Role / Timing Role: High-side main switch operating at 250 kHz with 30 ns dead-time control. Use Value: 0.27 Ω RDS(on) keeps conduction loss below 0.6 W at 5 A, while 16 nC Qg enables clean 10 ns rise/fall edges with 5 Ω gate resistor. | Use Scenario: H-bridge leg for 12–36 V brushed DC motor in factory automation actuator. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 7 A peak. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; body diode trr = 130 ns minimizes cross-conduction loss. |
| Load Switch for 48 V Telecom System | Overvoltage Protection Circuit |
Use Scenario: Hot-swap controller for redundant 48 V backplane supply in telecom shelf. IC Role / Device Role / Timing Role: Main pass transistor enabling soft-start and current limiting via external sense resistor. Use Value: 100 V VDS provides 2× margin over 48 V nominal rail; 7.7 A ID supports 10 A inrush with 25 °C derating. | Use Scenario: Crowbar device triggered by overvoltage comparator in medical power supply. IC Role / Device Role / Timing Role: Fast-acting shunt switch clamping output to ground during fault. Use Value: 210 mJ EAS sustains 100 ms overvoltage event at 50 V without failure; dV/dt immunity prevents spurious triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR120NTRPBF | Same VDS (100 V), lower RDS(on) (0.19 Ω), higher Qg (21 nC), same DPAK package. | Better conduction efficiency but requires stronger gate driver; less suitable for space-constrained 5 V gate-drive systems. | Choose IRFR120PBF-BE3 when gate drive current is limited or cost sensitivity outweighs 0.08 Ω RDS(on) improvement. |
| STP10NK100ZFP | Higher VDS (1000 V), much higher RDS(on) (1.2 Ω), TO-220 package, no avalanche rating. | Designed for offline AC-DC primary side; incompatible with low-voltage DC-DC due to excessive on-loss and thermal limitations. | Select IRFR120PBF-BE3 for 24–48 V systems requiring compact surface-mount form factor and proven avalanche ruggedness. |
Compared with IRFR120PBF-BE3, IRLLR120NTRPBF offers lower conduction loss but demands higher gate drive strength, while STP10NK100ZFP targets high-voltage AC applications and lacks the thermal and avalanche performance needed for robust low-voltage industrial switching.
Availability
IRFR120PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and telecom load switching requiring stable component supply across extended production lifecycles.
Supply support for IRFR120PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR120PBF-BE3 belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for optimal balance of low RDS(on), fast switching, and rugged avalanche performance in surface-mount power management applications.
FAQ
What is the maximum continuous drain current for IRFR120PBF-BE3 at 100 °C case temperature?
The IRFR120PBF-BE3 supports 4.9 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package; actual usable current depends on PCB copper area and ambient conditions. For sustained 7.7 A operation, case temperature must remain at or below 25 °C with adequate heatsinking.
Does IRFR120PBF-BE3 have a specified avalanche energy rating?
Yes, the IRFR120PBF-BE3 is repetitively avalanche rated with 4.2 mJ EAR and 7.7 A IAR, and has a single-pulse avalanche energy rating of 210 mJ EAS. These values are measured under defined test conditions (VDD = 25 V, L = 5.3 mH, Rg = 25 Ω) and are critical for designing snubberless inductive load circuits such as relay drivers or solenoid controllers.
What is the gate threshold voltage range for IRFR120PBF-BE3?
The IRFR120PBF-BE3 has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C, with ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity; the upper limit prevents unintended conduction in noisy industrial environments.
Can IRFR120PBF-BE3 be used in a half-bridge configuration?
Yes, the IRFR120PBF-BE3 is suitable for half-bridge topologies due to its fast switching (td(on) = 6.8 ns, tf = 17 ns), low Qgd/Qg ratio (48 %), and 5.5 V/ns dV/dt immunity. Its 7.5 nH source inductance and 4.5 nH drain inductance minimize parasitic oscillation; proper gate loop layout and dead-time control >30 ns are recommended to prevent shoot-through.
What is the thermal resistance from junction to case (RthJC) for IRFR120PBF-BE3?
The IRFR120PBF-BE3 has a maximum junction-to-case (drain) thermal resistance of 3.0 °C/W, measured from die to the exposed drain pad. This value assumes full solder coverage of the thermal pad to ≥1 cm² copper area; actual RthJC may increase by 0.5–1.0 °C/W with incomplete pad wetting or thin copper layers.
IRFR120PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR120PBF-BE3 FAQ
1.How can I place an order for IRFR120PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR120PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR120PBF-BE3 reliable?
The price and inventory of IRFR120PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR120PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR120PBF-BE3?
IRFR120PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR120PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR120PBF-BE3?
For technical support, including IRFR120PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120PBF-BE3 requirements.
6.How does Aetrix verify that IRFR120PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR120PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR120PBF-BE3?
All IRFR120PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR120PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR120PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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