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Vishay Siliconix IRFR1N60APBF-BE3
- Part No.:
- IRFR1N60APBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR1N60APBF-BE3.pdf
- Description:
- MOSFET N-CH 600V 1.4A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,456
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Product details
Overview
IRFR1N60APBF-BE3 from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - optimized for low-power flyback SMPS primary-side switching.
For engineers reviewing the IRFR1N60APBF-BE3 datasheet, IRFR1N60APBF-BE3 pinout, IRFR1N60APBF-BE3 application, or IRFR1N60APBF-BE3 equivalent, key selection criteria include its 600 V blocking rating, thermally robust DPAK footprint, avalanche-rated ruggedness, and compatibility with standard gate drivers in offline AC/DC converters.
Technical Context
This MOSFET employs planar high-voltage silicon technology with fully characterized avalanche performance and dynamic dV/dt ruggedness. Its gate structure minimizes Qg (14 nC) and Qgd/Qgs ratio (8.1 nC / 2.7 nC), enabling clean switching in discontinuous conduction mode (DCM) flyback topologies.
It integrates a fast-recovery body diode (trr = 290–440 ns, Qrr = 510–760 μC) and supports unclamped inductive switching up to IAS = 1.4 A with EAS = 93 mJ - critical for reliable operation in transformer-coupled power stages without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports universal AC input (85–265 VAC) with margin for reflected voltage spikes in flyback designs |
| RDS(on) max | 7.0 Ω @ VGS = 10 V - enables low conduction loss at 1.4 A continuous drain current (TC = 25 °C) |
| Qg max | 14 nC - reduces gate drive power and simplifies driver selection for 50–100 kHz SMPS operation |
| EAS | 93 mJ - withstands single-pulse avalanche stress during transformer reset without failure |
| trr | 290–440 ns - limits reverse recovery losses and EMI generation when body diode conducts in DCM |
| RthJC | 3.5 °C/W - enables efficient heat transfer to PCB copper pour or heatsink in compact DPAK layout |
| ID cont. | 1.4 A @ TC = 25 °C - defines maximum steady-state current before thermal derating begins |
Pinout & Package
DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 2.39 mm (L × W × H), compatible with IPC-7351B DPAK footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level gate drive; low Qg (14 nC) ensures fast turn-on/turn-off with minimal driver stress |
| D (Drain) | High-voltage output terminal | Connected to primary winding of flyback transformer; rated for 600 V repetitive blocking and 93 mJ avalanche energy |
| S (Source) | Reference node / return path | Tied to power ground; body diode anode; used for current sensing and gate drive reference in self-driven configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge | Qg = 14 nC - reduces gate driver power dissipation and enables use of low-cost SOT-23 drivers |
| Avalanche ruggedness | EAS = 93 mJ - eliminates need for external clamping circuits in flyback snubberless designs |
| Dynamic dV/dt immunity | 3.8 V/ns - prevents false turn-on during high-slew-rate switching transients in noisy power stages |
| Body diode recovery | Qrr = 510–760 μC - minimizes switching loss and ringing when diode commutates in DCM operation |
| Thermal resistance | RthJC = 3.5 °C/W - allows >1.4 W power dissipation with modest PCB copper area (1"² FR-4) |
Applications
| AC/DC Flyback Converter | UPS DC-DC Stage |
|---|---|
Use Scenario: Primary-side switch in 5–25 W offline flyback converter powering IoT sensors or LED drivers. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from AC line to isolated secondary via transformer. Use Value: 600 V rating accommodates 480 VDC bulk voltage with safety margin; low Qg enables efficient 65 kHz operation with minimal gate loss. |
Use Scenario: Battery backup DC-DC boost stage in line-interactive UPS handling 12–24 V input. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch managing battery-to-bus power flow during outage. Use Value: Avalanche rating protects against inductive kickback from relay coils or fan motors; DPAK thermal performance sustains 1.4 A continuous under load. |
| Power Factor Correction | Industrial Control Power Supply |
Use Scenario: Low-power PFC pre-regulator in Class II medical or industrial auxiliary supplies. IC Role / Device Role / Timing Role: Switching transistor in boost PFC stage operating in transition mode (TM). Use Value: Fast body diode (trr < 440 ns) and low Coss (32.6 pF) reduce switching loss and improve THD performance at 50–100 kHz. |
Use Scenario: Isolated auxiliary supply for PLC I/O modules requiring long-term reliability. IC Role / Device Role / Timing Role: Primary-side switch in regulated flyback delivering +5 V, +12 V, and -12 V rails. Use Value: 150 °C max junction temperature and halogen-free "-BE3" variant support extended life in sealed enclosures with limited airflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60ZFP | 600 V, 1.15 A, RDS(on) = 8.5 Ω, Qg = 12 nC, TO-220FP package | Higher RDS(on) and through-hole mounting - less suitable for space-constrained SMT designs | Prefer IRFR1N60APBF-BE3 for DPAK-based layouts requiring lower conduction loss and surface-mount assembly. |
| FQP1N60CTF | 600 V, 1.3 A, RDS(on) = 7.5 Ω, Qg = 13 nC, TO-220F package | Through-hole package with higher RthJA - requires larger heatsink for same power dissipation | Choose IRFR1N60APBF-BE3 when board space, thermal management on PCB, or automated assembly are priorities. |
Compared with STP1NK60ZFP and FQP1N60CTF, the IRFR1N60APBF-BE3 delivers lower RDS(on) in a thermally superior DPAK package, enabling higher efficiency and smaller footprint in low-power SMPS - while maintaining identical 600 V rating and avalanche capability.
Availability
IRFR1N60APBF-BE3 is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and power factor correction circuits requiring stable component supply, long-lifecycle support, and lead-free/halogen-free compliance.
Supply support for IRFR1N60APBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRFR1N60APBF-BE3 belongs to Vishay's high-voltage power MOSFET family engineered for robust offline AC/DC conversion in cost-sensitive, space-constrained applications such as adapters, lighting, and industrial controls.
FAQ
What is the maximum continuous drain current for IRFR1N60APBF-BE3 at 100 °C case temperature?
The IRFR1N60APBF-BE3 supports 0.89 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the DPAK package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify PCB copper area and ambient conditions to maintain this rating in end equipment.
Does IRFR1N60APBF-BE3 have avalanche capability, and how is it specified?
Yes, the IRFR1N60APBF-BE3 is fully characterized for avalanche operation: single-pulse EAS = 93 mJ (TJ = 25 °C, L = 95 mH, Rg = 25 Ω, IAS = 1.4 A) and repetitive IAR = 1.4 A. These values are measured per JEDEC standards and confirm ruggedness during transformer reset or inductive load switching without external protection.
What is the gate-source threshold voltage range for IRFR1N60APBF-BE3?
The IRFR1N60APBF-BE3 has a gate-source threshold voltage VGS(th) ranging from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This confirms it is a standard-level (not logic-level) MOSFET, requiring ≥10 V gate drive for full enhancement and low RDS(on) - consistent with its 7.0 Ω on-resistance specification.
Can IRFR1N60APBF-BE3 be used in place of IRFR1N60APBF?
Yes, IRFR1N60APBF-BE3 is a direct replacement for IRFR1N60APBF, with identical electrical specifications and DPAK packaging. The "-BE3" suffix denotes alternate manufacturing location and lead-free/halogen-free compliance (per Vishay document S21-0466-Rev. E), making it suitable for RoHS-compliant production without design or layout changes.
What is the typical output capacitance Coss of IRFR1N60APBF-BE3 at 480 V drain-source voltage?
The typical output capacitance Coss of IRFR1N60APBF-BE3 is 11.5 pF at VDS = 480 V and f = 1.0 MHz. This low, voltage-stable Coss contributes to reduced turn-off loss and improved efficiency in high-voltage flyback converters operating near the device's 600 V rating.
IRFR1N60APBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 840mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 229 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 36W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR1N60APBF-BE3 FAQ
1.How can I place an order for IRFR1N60APBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR1N60APBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR1N60APBF-BE3 reliable?
The price and inventory of IRFR1N60APBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1N60APBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR1N60APBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1N60APBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR1N60APBF-BE3?
IRFR1N60APBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR1N60APBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR1N60APBF-BE3?
For technical support, including IRFR1N60APBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1N60APBF-BE3 requirements.
6.How does Aetrix verify that IRFR1N60APBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR1N60APBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1N60APBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR1N60APBF-BE3?
All IRFR1N60APBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1N60APBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR1N60APBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR1N60APBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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