Vishay Siliconix IRFR1N60ATR

Overview

IRFR1N60ATR from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - designed for high-voltage, low-current switching in flyback SMPS and PFC stages.

For engineers reviewing the IRFR1N60ATR datasheet, IRFR1N60ATR pinout, IRFR1N60ATR application, or IRFR1N60ATR equivalent, key selection criteria include its 600 V blocking rating, 1.4 A continuous drain current at T_C = 25 °C, robust dV/dt ruggedness (3.8 V/ns), body diode recovery time (290–440 ns), and DPAK thermal performance (R_thJC = 3.5 °C/W).

Technical Context

This MOSFET employs planar stripe silicon technology with fully characterized avalanche capability and dynamic dV/dt ruggedness. Its gate structure minimizes Q_g (14 nC) and Q_gd/Q_gs ratio (8.1/2.7), enabling fast, controllable switching in hard-switched topologies.

The device integrates a co-packaged body diode with 1.4 A continuous forward current, 1.6 V V_SD at 1.4 A, and controlled reverse recovery (Q_rr = 510–760 μC), supporting reliable operation in discontinuous conduction mode (DCM) flyback converters.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain pad on underside for thermal conduction and mechanical anchoring. Standard 3-pin surface-mount outline: Gate (G), Drain (D), Source (S), with drain tab electrically connected to pin 2 (Drain).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFR1N60ATR, SiHFR1N60ATR-GE3 provides identical performance with standardized plating, while IRFU1N60APbF trades DPAK's superior thermal PCB mount for IPAK's mechanical form factor - neither is pin-compatible due to differing package outlines and thermal pad configurations.

Availability

IRFR1N60ATR is available at Aetrix Electronics and suitable for AC-DC adapters, LED drivers, and industrial auxiliary power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRFR1N60ATR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFR1N60ATR belongs to Vishay's high-voltage power MOSFET family optimized for cost-sensitive, low-to-mid power SMPS designs where ruggedness, simplicity, and RoHS compliance are critical.

FAQ

What is the maximum continuous drain current rating for IRFR1N60ATR at 100 °C case temperature?

The IRFR1N60ATR supports 0.89 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package under sustained power dissipation; designers must verify junction temperature using R_thJC = 3.5 °C/W and actual PCB copper area.

Does IRFR1N60ATR have a specified gate threshold voltage range?

Yes, the IRFR1N60ATR has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This confirms it is a standard-threshold MOSFET - not logic-level - and requires ≥10 V gate drive for full enhancement and minimal R_DS(on).

Can IRFR1N60ATR be used in avalanche mode repeatedly?

The IRFR1N60ATR is rated for repetitive avalanche with I_AR = 1.4 A and E_AR = 3.6 mJ, but only under strict conditions: pulse width ≤ 300 μs, duty cycle ≤ 2 %, and starting T_J ≤ 25 °C. For reliable long-term operation, unclamped inductive switching should remain within single-pulse E_AS = 93 mJ limits.

What is the recommended PCB pad layout for IRFR1N60ATR in DPAK package?

Vishay recommends minimum DPAK pads per Application Note 826: 0.224" × 0.180" (5.69 mm × 4.57 mm) for the source pad, 0.243" × 0.087" (6.18 mm × 2.20 mm) for the gate pad, and full coverage of the drain tab (0.420" × 0.224", or 10.67 mm × 5.69 mm) with thermal vias to inner ground planes to achieve R_thJA ≈ 50 °C/W.

How does the body diode performance of IRFR1N60ATR impact flyback converter efficiency?

The IRFR1N60ATR's body diode exhibits V_SD = 1.6 V at 1.4 A and t_rr = 290–440 ns, contributing measurable conduction and recovery loss during discontinuous mode operation. In QR flyback designs, this diode behavior affects ZVS timing margin and EMI generation - pairing with a Schottky catch diode may improve light-load efficiency.