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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR1N60ATRPBF

Name: IRFR1N60ATRPBF
Brand: Vishay Siliconix
SKU: IRFR1N60ATRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1N60ATRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1N60ATRPBF.pdf

Description:: MOSFET N-CH 600V 1.4A DPAK

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Product details

Overview

IRFR1N60ATRPBF from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - designed for high-voltage, low-current switching in flyback SMPS and PFC stages.

For engineers reviewing the IRFR1N60ATRPBF datasheet, IRFR1N60ATRPBF pinout, IRFR1N60ATRPBF application, or IRFR1N60ATRPBF equivalent, key selection criteria include its 600 V V_DS, 7.0 Ω on-resistance at 10 V drive, 14 nC Q_g, 3.5 °C/W R_thJC, and TO-252 thermal performance in compact board-mounted power converters.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized avalanche capability and dV/dt ruggedness up to 3.8 V/ns. Its gate structure minimizes Q_g (14 nC) and Q_gd/Q_gs ratio (8.1/2.7), enabling fast, stable switching in hard-switched topologies.

It integrates a robust body diode with 290–440 ns reverse recovery time and 510–760 µC Q_rr, supporting unclamped inductive switching at I_AS = 1.4 A and E_AS = 93 mJ - critical for reliability in flyback snubberless designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input offline SMPS up to 480 V DC bus
R_DS(on) max	7.0 Ω @ V_GS = 10 V - enables low conduction loss at 1.4 A continuous drain current
Q_g max	14 nC - reduces gate driver power requirement and simplifies 10 V logic-level drive
I_D continuous	1.4 A @ T_C = 25 °C - rated for low-power flyback and auxiliary supplies
E_AS	93 mJ - ensures single-pulse avalanche survivability during overvoltage transients
R_thJC	3.5 °C/W - enables efficient heat transfer to PCB copper in DPAK footprint
V_GS(th)	2.0–4.0 V - compatible with standard 10 V gate drivers; not logic-level optimized

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-pin configuration (G, D, S) with G–D–S pin order as viewed from top marking side.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V drive; threshold 2.0–4.0 V; Q_g = 14 nC requires ~140 µC per full cycle at 10 kHz
D (Drain)	High-voltage output node	Connected to 600 V-rated drain region; bonded to exposed thermal pad for heatsinking
S (Source)	Power return and reference	Common node for gate drive return and current sensing; ties to PCB ground plane

Key Features

Feature	Design Value
Low Q_g (14 nC)	Reduces gate drive losses and enables use of low-cost, low-current drivers in cost-sensitive SMPS
Fully characterized avalanche	93 mJ E_AS and 3.6 mJ E_AR allow reliable operation under inductive turn-off stress without external clamping
Improved dV/dt ruggedness	3.8 V/ns rating prevents spurious turn-on in high-noise, high-dV/dt flyback transformer environments
Characterized C_iss/C_oss/C_rss	229 pF/32.6 pF/2.4 pF values support accurate snubber and EMI filter design in 50–500 kHz applications
Thermally enhanced DPAK	3.5 °C/W R_thJC allows >1 W dissipation with minimal PCB copper area, reducing board size vs. TO-220

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in low-power (<15 W) isolated flyback converter for AC/DC adapter or IoT power supply. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding; operates at 60–130 kHz. Use Value: 600 V rating accommodates 375 V DC link with margin; 7.0 Ω R_DS(on) limits conduction loss to <1.4 W at 1.4 A, enabling thermally constrained PCB layouts.	Use Scenario: Standby DC-DC converter or battery charger stage in line-interactive UPS with 24–48 V output. IC Role / Device Role / Timing Role: Low-duty-cycle high-voltage switch regulating charging voltage or powering control circuitry from rectified AC input. Use Value: 93 mJ E_AS withstands inductive kick during grid dropout events; 1.4 A I_D supports typical 1–2 A standby loads.
Power Factor Correction (PFC)	Industrial Control Auxiliary Supply
Use Scenario: Discontinuous conduction mode (DCM) boost PFC stage in sub-100 W lighting or appliance controllers. IC Role / Device Role / Timing Role: Fast-switching boost switch synchronizing with AC line zero-crossings; handles peak currents up to 5.6 A pulsed. Use Value: 5.6 A I_DM and 290–440 ns t_rr support clean diode commutation; low Q_gd/Q_gs ratio improves stability under light-load conditions.	Use Scenario: Isolated auxiliary supply powering PLC I/O modules, sensor interfaces, or relay drivers in 24 V industrial systems. IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter delivering 5–12 V at ≤1 A to control logic and analog circuitry. Use Value: -55 to +150 °C T_J range ensures operation in harsh cabinet environments; Pb-free/ROHS-compliant packaging meets industrial compliance requirements.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in low-power (<15 W) isolated flyback converter for AC/DC adapter or IoT power supply.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding; operates at 60–130 kHz.

Use Value: 600 V rating accommodates 375 V DC link with margin; 7.0 Ω R_DS(on) limits conduction loss to <1.4 W at 1.4 A, enabling thermally constrained PCB layouts.

Use Scenario: Standby DC-DC converter or battery charger stage in line-interactive UPS with 24–48 V output.

IC Role / Device Role / Timing Role: Low-duty-cycle high-voltage switch regulating charging voltage or powering control circuitry from rectified AC input.

Use Value: 93 mJ E_AS withstands inductive kick during grid dropout events; 1.4 A I_D supports typical 1–2 A standby loads.

Power Factor Correction (PFC)

Industrial Control Auxiliary Supply

Use Scenario: Discontinuous conduction mode (DCM) boost PFC stage in sub-100 W lighting or appliance controllers.

IC Role / Device Role / Timing Role: Fast-switching boost switch synchronizing with AC line zero-crossings; handles peak currents up to 5.6 A pulsed.

Use Value: 5.6 A I_DM and 290–440 ns t_rr support clean diode commutation; low Q_gd/Q_gs ratio improves stability under light-load conditions.

Use Scenario: Isolated auxiliary supply powering PLC I/O modules, sensor interfaces, or relay drivers in 24 V industrial systems.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converter delivering 5–12 V at ≤1 A to control logic and analog circuitry.

Use Value: -55 to +150 °C T_J range ensures operation in harsh cabinet environments; Pb-free/ROHS-compliant packaging meets industrial compliance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR1N60ATR-GE3	Same die, identical R_DS(on), Q_g, and avalanche specs; GE3 suffix denotes Vishay's halogen-free, lead-free DPAK variant	No functional difference; used interchangeably where RoHS/REACH compliance is mandatory	Select SiHFR1N60ATR-GE3 when halogen-free material declaration is required by OEM procurement policy
IRFR1N60APbF	Identical electrical specs and DPAK package; PbF suffix indicates leaded termination (not Pb-free), same BE3 manufacturing location	Not suitable for RoHS-compliant designs; may be selected for legacy rework or non-regulated markets	Choose IRFR1N60APbF only if leaded solder process is mandated and environmental compliance is waived

Compared with IRFR1N60ATRPBF, SiHFR1N60ATR-GE3 offers identical performance with halogen-free packaging, while IRFR1N60APbF provides identical functionality without RoHS compliance - making the TRPBF variant optimal for new RoHS-compliant industrial and consumer designs requiring Pb-free assembly.

Availability

IRFR1N60ATRPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and power factor correction circuits requiring stable component supply across automotive-grade temperature ranges and long-lifecycle production programs.

Supply support for IRFR1N60ATRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFR1N60ATRPBF belongs to Vishay's high-voltage power MOSFET family engineered for efficiency and ruggedness in offline AC/DC conversion - targeting cost-sensitive, space-constrained flyback and PFC topologies below 25 W.

FAQ

What is the maximum continuous drain current rating for IRFR1N60ATRPBF at 100 °C case temperature?

The IRFR1N60ATRPBF has a maximum continuous drain current of 0.89 A at T_C = 100 °C, derating linearly from 1.4 A at 25 °C using a 0.28 W/°C factor. This reflects thermal limitations of the DPAK package under sustained high-temperature operation, and must be validated against actual PCB layout and airflow conditions in the final design.

Does IRFR1N60ATRPBF support logic-level gate drive?

No, IRFR1N60ATRPBF is not a logic-level MOSFET. Its gate threshold voltage is specified from 2.0 V to 4.0 V, but it is characterized for full enhancement at V_GS = 10 V, with R_DS(on) guaranteed at that level. Driving it reliably at 5 V risks incomplete turn-on and excessive conduction loss; a 10 V gate driver is required for specified performance.

What is the thermal resistance from junction to ambient for IRFR1N60ATRPBF on a standard PCB?

The IRFR1N60ATRPBF has a maximum junction-to-ambient thermal resistance (R_thJA) of 50 °C/W when mounted on a 1" square FR-4 PCB - significantly lower than the 110 °C/W rating for still air. This value assumes minimum recommended copper pour per Vishay Application Note 826 and is critical for calculating safe operating temperature margins in compact layouts.

Can IRFR1N60ATRPBF be used in avalanche mode repeatedly?

The IRFR1N60ATRPBF is rated for repetitive avalanche with I_AR = 1.4 A and E_AR = 3.6 mJ, but this mode is not intended for continuous operation. Repetitive avalanche stresses the device beyond normal switching limits and requires strict pulse-width and duty-cycle control (≤2%, ≤300 μs) per Figure 11. For robust designs, avoid reliance on repetitive avalanche; use clamping or snubbers instead.

What is the body diode reverse recovery charge (Q_rr) specification for IRFR1N60ATRPBF?

The IRFR1N60ATRPBF body diode has a reverse recovery charge (Q_rr) ranging from 510 µC to 760 µC, measured at T_J = 25 °C, I_F = 1.4 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in flyback converters; designers should account for it in snubber sizing and gate drive strength calculations.

IRFR1N60ATRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 229 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR1N60ATRPBF FAQ

1.How can I place an order for IRFR1N60ATRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1N60ATRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1N60ATRPBF reliable?

The price and inventory of IRFR1N60ATRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1N60ATRPBF is usually 5 days.

3.What payment methods are accepted for IRFR1N60ATRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1N60ATRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1N60ATRPBF?

IRFR1N60ATRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1N60ATRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1N60ATRPBF?

For technical support, including IRFR1N60ATRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1N60ATRPBF requirements.

6.How does Aetrix verify that IRFR1N60ATRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR1N60ATRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1N60ATRPBF meets industry standards.

7.What is the process for return or replacement of IRFR1N60ATRPBF?

All IRFR1N60ATRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1N60ATRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1N60ATRPBF part is unused and in its original packaging.

Return procedure for IRFR1N60ATRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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