Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFR210TRRPBF

Part No.:
IRFR210TRRPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR210TRRPBF.pdf
Description:
MOSFET N-CH 200V 2.6A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,330

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR210TRRPBF from Vishay Siliconix is a 200 V, 2.6 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, with RDS(on) = 1.5 Ω at VGS = 10 V, Qg = 8.2 nC, and repetitive avalanche rated to 2.5 mJ - designed for DC-DC converters, motor control stages, and industrial power switching where ruggedness and fast switching are required.

For engineers reviewing the IRFR210TRRPBF datasheet, IRFR210TRRPBF pinout, IRFR210TRRPBF application, or IRFR210TRRPBF equivalent, this part's validated dV/dt rating (5.0 V/ns), body diode recovery time (150–310 ns), and PCB-mount thermal resistance (RthJA = 50 °C/W) are critical for snubberless inductive load designs and high-reliability board-level power stages.

Technical Context

This third-generation TrenchFET® MOSFET uses planar silicon process with optimized gate charge distribution: Qgs = 1.8 nC and Qgd = 4.5 nC enable predictable Miller-driven turn-off behavior under hard-switching conditions. Its dynamic dV/dt rating of 5.0 V/ns supports stable operation in noisy environments without external gate clamping.

The device integrates a fast-recovery body diode (trr = 150–310 ns, Qrr = 0.60–1.4 μC) and is rated for unclamped inductive switching up to EAS = 95 mJ (single-pulse) and IAR = 2.7 A (repetitive avalanche), enabling robust operation in flyback and synchronous rectifier topologies without external freewheeling diodes.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 200 V - supports 170 VRMS AC line inputs with 20 % margin for surge handling in offline SMPS
RDS(on) max 1.5 Ω at VGS = 10 V - limits conduction loss to ≤ 9.4 mW at 2.6 A DC, suitable for low-power buck stages
Qg max 8.2 nC - enables <15 ns turn-on delay (td(on)) with 24 Ω gate resistor, supporting >500 kHz switching
EAS 95 mJ - allows safe single-pulse energy absorption during inductive turn-off transients in relay drivers
trr 150–310 ns - reduces cross-conduction risk in synchronous rectification when paired with matched gate drive timing
RthJA (PCB mount) 50 °C/W - achieves ≤ 85 °C junction rise at 2.5 W dissipation on 1" FR-4 PCB, enabling fanless operation

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; standard 3-pin layout optimized for automated assembly and high-current PCB routing.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures compatibility with 3.3 V/5 V microcontrollers via level-shifting
D (Drain) High-side power terminal Exposed metal pad (pin 2) serves as primary heat path and high-current return; must be connected to large copper pour
S (Source) Reference and current return Provides Kelvin sense path for current monitoring; ties to ground plane with minimal inductance to suppress ringing

Key Features

Feature Design Value
Dynamic dV/dt rating 5.0 V/ns - prevents false turn-on during high-slew-rate transients in half-bridge configurations
Repetitive avalanche capability 2.7 A / 2.5 mJ - eliminates need for external clamping in overcurrent-limited motor gate drivers
Fast switching performance tr = 17 ns, tf = 8.9 ns - minimizes overlap loss in synchronous buck converters operating above 300 kHz
Body diode recovery Qrr = 0.60–1.4 μC - enables efficient synchronous rectification in 12–48 V DC-DC outputs without external Schottky
Surface-mount compatibility DPAK footprint per Vishay drawing 5347 - supports vapor-phase reflow with recommended 10.67 × 5.69 mm copper pads

Applications

Industrial Motor Control DC-DC Converter Switch

Use Scenario: Low-voltage brushed DC motor H-bridge driver in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Low-side switch controlling 24 V, 2 A motor current with PWM at 20 kHz.

Use Value: Repetitive avalanche rating absorbs back-EMF spikes during abrupt motor stop, eliminating external TVS diodes.

Use Scenario: High-efficiency 12 V input to 5 V/3 A synchronous buck converter in network infrastructure equipment.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal margin.

Use Value: Body diode trr ≤ 310 ns and Qrr ≤ 1.4 μC minimize shoot-through risk and reverse recovery loss at 500 kHz switching.

AC-DC Auxiliary Supply LED Driver Switch

Use Scenario: 200 V-rated auxiliary flyback converter supplying bias power to main SMPS controller ICs.

IC Role / Device Role / Timing Role: Primary-side switch handling 170 VRMS rectified line with 20 % safety margin.

Use Value: VDS = 200 V and EAS = 95 mJ ensure reliable operation during line surges and startup overvoltage events.

Use Scenario: Constant-current LED string driver for commercial signage using buck topology with 36 V output.

IC Role / Device Role / Timing Role: Main switching element modulating current through 10-series white LEDs at 100–1000 Hz PWM dimming.

Use Value: RDS(on) = 1.5 Ω limits thermal rise to <40 °C at 1.5 A continuous, enabling compact heatsink-free design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRLR210PbF RDS(on) = 1.8 Ω (higher), Qg = 7.5 nC (lower), same DPAK package Marginally lower switching loss but higher conduction loss at >1.5 A; less suitable for thermally constrained 2.6 A loads Select when gate drive strength is limited and average current stays below 1.8 A
SiHFR210-GE3 Identical RDS(on), Qg, and avalanche ratings; halogen-free, RoHS-compliant variant No functional difference; preferred for automotive or medical BOMs requiring full material compliance Select when halogen-free certification and IPC/JEDEC-9702 qualification are mandatory

Compared with IRFR210TRRPBF, IRFR210TRRPBF offers optimal balance of conduction and switching loss at 2.6 A, while IRFR210TRRPBF provides identical performance with Pb-free/halogen-free assurance, and IRLR210PbF trades conduction efficiency for reduced gate charge in low-current, high-frequency designs.

Availability

IRFR210TRRPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter switches, and AC-DC auxiliary supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFR210TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR210TRRPBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for ruggedized switching in space-constrained, high-reliability power conversion systems where avalanche tolerance and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRFR210TRRPBF at 100 °C case temperature?

The IRFR210TRRPBF supports a continuous drain current of 1.7 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained power dissipation; designers must verify PCB copper area and ambient airflow to maintain safe junction temperature below 150 °C. The IRFR210TRRPBF datasheet confirms this value applies to surface-mount mounting on FR-4 PCBs.

Does IRFR210TRRPBF require a gate resistor for stable switching?

Yes, IRFR210TRRPBF requires an external gate resistor to control dI/dt and suppress oscillation - typical values range from 10 Ω to 47 Ω depending on drive strength and layout parasitics. The IRFR210TRRPBF datasheet specifies td(on), tr, td(off), and tf measured with Rg = 24 Ω, confirming that gate resistance directly impacts switching speed and EMI generation in practical layouts.

Is IRFR210TRRPBF suitable for use as a synchronous rectifier in a 500 kHz buck converter?

Yes, IRFR210TRRPBF is suitable as a synchronous rectifier at 500 kHz due to its low Qg (8.2 nC), fast tr/tf (17 ns / 8.9 ns), and body diode Qrr (0.60–1.4 μC). These parameters allow clean commutation with minimal reverse recovery loss. The IRFR210TRRPBF body diode trr of 150–310 ns is well within timing margins for 500 kHz operation when paired with appropriate gate drive timing.

What is the thermal resistance from junction to ambient for IRFR210TRRPBF when mounted on a standard PCB?

The IRFR210TRRPBF has a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W when mounted on a 1" square FR-4 PCB - a value confirmed in the Thermal Resistance Ratings table. This assumes standard 2 oz copper with no additional heatsinking; actual performance improves with larger copper pours or internal layers. The IRFR210TRRPBF datasheet notes this condition explicitly for PCB-mounted thermal modeling.

Can IRFR210TRRPBF replace IRFR210PbF in existing designs?

Yes, IRFR210TRRPBF is a tape-and-reel packaged version of the same die and DPAK construction as IRFR210PbF, with identical electrical specifications, pinout, and thermal characteristics. The "TRR" suffix denotes tape-and-reel packaging with 2,000 units per reel, making IRFR210TRRPBF fully compatible for automated assembly where IRFR210PbF was used in tube or cut-tape formats.

IRFR210TRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR210TRRPBF FAQ

1.How can I place an order for IRFR210TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR210TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR210TRRPBF reliable?

The price and inventory of IRFR210TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR210TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR210TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR210TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR210TRRPBF?

IRFR210TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR210TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR210TRRPBF?

For technical support, including IRFR210TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR210TRRPBF requirements.

6.How does Aetrix verify that IRFR210TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR210TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR210TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR210TRRPBF?

All IRFR210TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR210TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR210TRRPBF part is unused and in its original packaging.

Return procedure for IRFR210TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR210TRRPBF Tags

  • IRFR210TRRPBF
  • IRFR210TRRPBF PDF
  • IRFR210TRRPBF Datasheet
  • IRFR210TRRPBF Specifications
  • IRFR210TRRPBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRFR210TRRPBF
  • Buy IRFR210TRRPBF
  • IRFR210TRRPBF Price
  • IRFR210TRRPBF Distributor
  • IRFR210TRRPBF Supplier
  • IRFR210TRRPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER