NXP Semiconductors IRFR220,118

Overview

IRFR220,118 from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT428 (D-PAK) package, rated for 200 V V_DS, 4.8 A continuous drain current at T_mb = 25 °C, and 0.7 Ω typical R_DS(on) at V_GS = 10 V and I_D = 2.9 A. It serves as a high-efficiency switching element in medium-power DC-DC converters and offline SMPS primary-side switches.

For engineers reviewing the IRFR220,118 datasheet, IRFR220,118 pinout, IRFR220,118 application, or IRFR220,118 equivalent, key selection criteria include its 3 K/W junction-to-mounting-base thermal resistance, fast 5 ns turn-on delay, 17 ns rise time, and integrated source-drain diode with 85 ns reverse recovery time - all critical for high-frequency hard-switched topologies.

Technical Context

This device employs TrenchMOS™ technology to achieve low on-resistance and fast switching with minimal gate charge (10 nC typical total Q_g). Its gate threshold voltage ranges from 2 V to 4 V at T_j = 25 °C, enabling reliable turn-on with standard 10 V gate drivers.

The mounting base (pin 2) is internally connected to the drain, forming a thermally optimized, electrically isolated heatsink interface. The SOT428 package supports surface-mount assembly while delivering 42 W total power dissipation at T_mb = 25 °C - contingent on PCB copper area and thermal vias.

Key Specifications

Pinout & Package

SOT428 (D-PAK) package with three terminals: pins 1 (gate), 3 (source), and mounting base (drain). Pin 2 is not connected - internal drain connection is made exclusively through the metal mounting base (MB), which must be soldered to a thermally robust PCB copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP3NK60ZFP and IRLML6344TRPBF, the IRFR220,118 uniquely balances 200 V capability, SMT compatibility, and sub-1 Ω on-resistance in a thermally optimized D-PAK - making it optimal for cost-sensitive, medium-power industrial and adapter designs where voltage margin and manufacturability are both essential.

Availability

IRFR220,118 is available at Aetrix Electronics and suitable for switched-mode power supplies, DC-DC converters, and industrial motor control circuits requiring stable component supply and long-term obsolescence management.

Supply support for IRFR220,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT markets, with roots in Philips' pioneering semiconductor division.

The IRFR220,118 belongs to NXP's legacy TrenchMOS™ power MOSFET family, engineered specifically for high-efficiency, medium-voltage switching in space-constrained industrial and consumer power supplies.

FAQ

What is the maximum continuous drain current for IRFR220,118 at 100 °C mounting base temperature?

The IRFR220,118 supports 3.0 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limitations of the SOT428 package; operation above this current requires forced air cooling or enhanced PCB copper to maintain T_j ≤ 150 °C. The IRFR220,118 must be mounted on ≥300 mm² of 2-oz copper with ≥8 thermal vias to achieve this rating reliably.

Does IRFR220,118 have a built-in body diode, and what are its key parameters?

Yes, the IRFR220,118 integrates a source-drain (body) diode rated for 4.8 A DC forward current and 19 A peak. Its forward voltage is 1.8 V maximum at I_S = 4.8 A and V_GS = 0 V, and reverse recovery time is 85 ns typical at I_S = 4.8 A, dI_S/dt = −100 A/µs, and V_DS = 30 V. These values are confirmed in Table 5 of the datasheet and define the IRFR220,118's suitability for freewheeling and synchronous rectification roles.

Can IRFR220,118 be driven directly by a 3.3 V microcontroller GPIO pin?

No - the IRFR220,118 has a gate threshold voltage range of 2–4 V, but full enhancement (to achieve 0.7 Ω R_DS(on)) requires V_GS ≥ 10 V. Driving it with only 3.3 V results in high on-resistance (>5 Ω), excessive conduction loss, and potential thermal runaway. A dedicated gate driver or level shifter is required; the IRFR220,118 must see ≥10 V between gate and source to perform per specification.

What is the thermal resistance from junction to mounting base for IRFR220,118, and how is it measured?

The IRFR220,118 has a thermal resistance R_th(j-mb) of 3 K/W, measured under conditions of mounting on a metal-clad substrate per Figure 4 in the datasheet. This value assumes direct soldering of the mounting base to a large copper area with no insulating thermal pad. Adding a 0.1 mm silicone pad increases R_th(j-mb) by ~1.2 K/W, degrading the IRFR220,118's power handling by over 25% - so bare-metal PCB attachment is strongly recommended.

Is pin 2 of the IRFR220,118 functional, and what is its purpose in the SOT428 package?

No - pin 2 of the IRFR220,118 in the SOT428 (D-PAK) package is not connected and must not be soldered or used for electrical contact. The drain is connected solely to the mounting base (MB), which is electrically and thermally coupled to the internal die. As stated in the "Pinning information" section, "It is not possible to make connection to pin 2"; attempting to use it risks mechanical stress and thermal delamination of the IRFR220,118 package.