Infineon Technologies IRFR2307ZTRLPBF

Overview

IRFR2307ZTRLPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 75V V_DSS, 16 mΩ R_DS(on) at V_GS = 10 V, and 42 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 65 ns, t_f = 29 ns), and rated repetitive avalanche capability-used in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFR2307ZTRLPBF datasheet, IRFR2307ZTRLPBF pinout, IRFR2307ZTRLPBF application, or IRFR2307ZTRLPBF equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, body diode recovery performance (t_rr = 31–47 ns, Q_rr = 31–47 nC), thermal robustness (R_θJC = 1.42 °C/W), and lead-free D-Pak packaging for surface-mount power stages.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining rugged unclamped inductive switching behavior. Its gate charge profile (Q_g = 50–75 nC, Q_gd = 19 nC) supports efficient high-frequency PWM operation up to several hundred kHz in hard-switched topologies.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3 V at 32 A) and controlled reverse recovery, enabling reliable operation in freewheeling and synchronous rectifier roles without external Schottky supplementation in medium-power applications.

Key Specifications

Pinout & Package

IRFR2307ZTRLPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal conduction. Pin assignment follows standard three-terminal MOSFET layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IXTP30N10D2, IRFR2307ZTRLPBF offers optimal balance of low R_DS(on), fast switching, surface-mount D-Pak packaging, and 175°C thermal capability-making it superior for compact, high-efficiency 48 V power stages where PCB real estate and thermal management are constrained.

Availability

IRFR2307ZTRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and hot-swap OR-ing circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for IRFR2307ZTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial power conversion, motor drives, and telecom infrastructure where thermal resilience and avalanche ruggedness are critical.

FAQ

Is IRFR2307ZTRLPBF suitable for logic-level gate drive?

No-it is not a true logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but minimum R_DS(on) is specified only at V_GS = 10 V. Driving with 3.3 V or 5 V will result in significantly elevated on-resistance (>100 mΩ), excessive heating, and potential failure. A dedicated gate driver or level-shifter is required for reliable operation.

What is the maximum safe operating frequency for IRFR2307ZTRLPBF in a buck converter?

Based on its 65 ns rise and 29 ns fall times and 50–75 nC total gate charge, IRFR2307ZTRLPBF supports stable operation up to 500 kHz in well-designed buck converters with optimized gate drive strength (≤10 Ω series resistance) and minimized parasitic inductance. Above this, switching losses increase disproportionately, requiring careful thermal validation.

Does IRFR2307ZTRLPBF have a qualified avalanche rating for repetitive operation?

Yes-Infineon explicitly qualifies this part for repetitive avalanche operation up to T_Jmax = 175°C, provided the single-pulse energy (E_AS) and thermal time constants remain within published SOA curves (Fig. 8, 12c, 15, 16). No external clamping is needed in properly designed inductive switching circuits like motor half-bridges.

How should the D-Pak drain tab be soldered for optimal thermal performance?

The exposed drain pad must be soldered to a minimum 400 mm² (≥20 mm × 20 mm) copper area on the PCB's inner or outer layer, with ≥4 thermal vias (0.3 mm diameter, filled or plated) connecting to internal ground or power planes. This achieves the rated R_θJC = 1.42 °C/W; insufficient copper results in >2× thermal resistance and premature thermal shutdown.