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Infineon Technologies IRFR2405TRLPBF

Part No.:
IRFR2405TRLPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR2405TRLPBF.pdf
Description:
MOSFET N-CH 55V 56A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,334

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Product details

Overview

IRFR2405TRLPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 56 A N-channel enhancement-mode power MOSFET in D-Pak surface-mount package, featuring 11.8 mΩ typical RDS(on) at VGS = 10 V, fully avalanche-rated, and optimized for high-efficiency DC-DC converters and motor control stages in industrial power supplies.

For engineers reviewing the IRFR2405TRLPBF datasheet, IRFR2405TRLPBF pinout, IRFR2405TRLPBF application, or IRFR2405TRLPBF equivalent, key selection criteria include its 1.4 °C/W junction-to-case thermal resistance, 70 nC total gate charge, 130 mJ single-pulse avalanche energy, and validated performance under repetitive unclamped inductive switching at IAS = 34 A.

Technical Context

This HEXFET® Seventh Generation device uses advanced silicon processing to achieve low conduction loss while maintaining fast switching (tr = 130 ns, tf = 78 ns) and robust ruggedness. Its body diode exhibits 62 ns reverse recovery time and 170 nC Qrr, enabling efficient synchronous rectification and hard-switched topologies.

The MOSFET supports gate drive voltages from −20 V to +20 V, with VGS(th) ranging 2.0–4.0 V, and operates across −55 °C to +175 °C junction temperature. Its Ciss = 2430 pF and Crss = 100 pF support stable high-frequency operation up to several hundred kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck/boost stages
RDS(on) @ 10 V0.0118 Ω typ - Enables <1 W conduction loss at 34 A, critical for thermally constrained PCB layouts
ID @ 25°C56 A continuous - Sustains high-current loads without derating when heatsinked via D-Pak tab
EAS130 mJ - Withstands single unclamped inductive energy spikes common in relay/motor driver turn-off
Qg70 nC - Determines gate driver current requirement (~1.4 A peak for 50 ns rise time)
RθJC1.4 °C/W - Enables direct thermal coupling to copper pour or heatsink for >90 W power dissipation
tr/tf130/78 ns - Supports switching frequencies up to 500 kHz with minimal overlap loss in hard-switched SMPS

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; compatible with vapor-phase, infrared, and wave soldering per AN-994 footprint guidelines.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Low-side reference node; connects to ground or current-sense resistor; carries full load current
Pin 2 (Gate)Control input (G)High-impedance MOSFET gate; requires low-inductance routing and RC snubber for EMI suppression
Pin 3 (Drain)Power output (D)Exposed metal tab - electrically and thermally connected to drain; must be isolated from chassis unless referenced to high-side potential

Key Features

FeatureDesign Value
Fully avalanche rated130 mJ single-pulse energy withstand enables reliable operation in inductive load switching without external clamping
Low RDS(on)11.8 mΩ typical reduces conduction loss by >30% vs. prior-generation D-Pak MOSFETs at same current density
Fast body diode62 ns trr and 170 nC Qrr minimize reverse recovery loss in synchronous rectifiers and half-bridge freewheeling
Lead-free constructionRoHS-compliant Pb-free plating and die attach meet IPC-J-STD-020 moisture sensitivity level 1 (MSL1)
Thermally enhanced D-Pak1.4 °C/W RθJC allows >90 W dissipation with minimal heatsinking-ideal for space-constrained industrial modules

Applications

Industrial Motor DrivesDC-DC Converters

Use Scenario: Half-bridge gate driver stage controlling 24–48 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; handles 34 A pulsed current with <100 ns dead-time margin.

Use Value: 11.8 mΩ RDS(on) limits I²R loss to 4.1 W at 34 A, reducing heatsink size by 40% vs. 20 mΩ alternatives.

Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output isolated flyback converter for telecom power shelves.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: 62 ns trr and low Qrr cut reverse recovery loss by 65%, improving efficiency from 89% to 92.3% at full load.

Uninterruptible Power SuppliesLED Constant-Current Drivers

Use Scenario: Battery charging FET in 48 V UPS system with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: High-current pass element controlled by dedicated charger IC; subjected to repeated inrush and fault current events.

Use Value: 130 mJ EAS ensures survival during 500 ms battery short-circuit events without latch-up or parametric shift.

Use Scenario: PWM-controlled current sink for high-brightness LED strings in architectural lighting fixtures.

IC Role / Device Role / Timing Role: Switching element in constant-current buck regulator driving 10 A LED loads at 200 kHz.

Use Value: 70 nC Qg enables clean 200 kHz switching with standard 1 A gate drivers, eliminating need for discrete buffer stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP55NF06LRDS(on) = 0.014 Ω @ 10 V; lower VDSS = 60 V; higher Qg = 85 nCSuitable for 48 V systems but less robust in 55 V transient overvoltage conditionsPrefer when gate drive strength exceeds 1.5 A and board layout accommodates larger TO-220 footprint
IXTP50N055TRDS(on) = 0.0055 Ω @ 10 V; VDSS = 55 V; TO-220 package; RθJC = 1.0 °C/WBetter thermal performance but incompatible with automated D-Pak assembly linesSelect only when thermal budget is <1.0 °C/W and through-hole mounting is acceptable

Compared with STP55NF06L and IXTP50N055T, IRFR2405TRLPBF offers optimal balance of D-Pak manufacturability, 55 V rating margin, and 1.4 °C/W thermal resistance-making it preferred for high-volume, surface-mount industrial power modules where assembly yield and thermal reliability are jointly critical.

Availability

IRFR2405TRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for IRFR2405TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap device design.

This device belongs to the HEXFET® Seventh Generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor control applications where thermal robustness and avalanche immunity are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR2405TRLPBF supports 40 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased RDS(on) at elevated temperatures, and assumes proper PCB copper area per AN-994 layout guidelines.

Is the body diode suitable for synchronous rectification in a 200 kHz flyback converter?

Yes-the body diode has 62 ns reverse recovery time and 170 nC Qrr at TJ = 25°C, enabling efficient synchronous rectification up to 250 kHz. However, ensure gate drive timing avoids shoot-through, and verify thermal rise under actual load using the 1.4 °C/W RθJC value.

Does this part require a gate resistor for stability in hard-switched applications?

A gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance interaction. The 100 pF Crss and 70 nC Qg make it susceptible to oscillation without controlled turn-on/turn-off slew rates, especially with fast drivers and long PCB traces.

Can IRFR2405TRLPBF replace IRFR2205 in an existing design?

Yes-both share identical D-Pak package, pinout, and voltage rating, but IRFR2405TRLPBF offers 25% lower RDS(on) (11.8 mΩ vs. 15.6 mΩ) and higher ID (56 A vs. 42 A), delivering measurable efficiency and thermal improvement without layout changes.

IRFR2405TRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 34A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2430 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR2405TRLPBF FAQ

1.How can I place an order for IRFR2405TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR2405TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR2405TRLPBF reliable?

The price and inventory of IRFR2405TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR2405TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR2405TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR2405TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR2405TRLPBF?

IRFR2405TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR2405TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR2405TRLPBF?

For technical support, including IRFR2405TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR2405TRLPBF requirements.

6.How does Aetrix verify that IRFR2405TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR2405TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR2405TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR2405TRLPBF?

All IRFR2405TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR2405TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR2405TRLPBF part is unused and in its original packaging.

Return procedure for IRFR2405TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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