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Vishay Siliconix IRFR320TR
- Part No.:
- IRFR320TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR320TR.pdf
- Description:
- MOSFET N-CH 400V 3.1A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,620
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Product details
Overview
IRFR320TR from Vishay Siliconix is a 400 V, 3.1 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.8 Ω RDS(on) at VGS = 10 V, 20 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor control circuits, and industrial power switching applications.
For engineers reviewing the IRFR320TR datasheet, IRFR320TR pinout, IRFR320TR application, or IRFR320TR equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and real-world mounting guidance for PCB-level thermal management and layout optimization.
Technical Context
This device belongs to Vishay's third-generation high-voltage power MOSFET family, optimized for fast switching with low gate charge (Qg = 20 nC) and robust dynamic dV/dt capability (4.0 V/ns). Its design integrates a ruggedized die structure enabling repetitive avalanche operation up to 3.1 A and 4.2 mJ per pulse.
The IRFR320TR uses a planar vertical DMOS process with integrated body diode, supporting unclamped inductive switching in hard-switched topologies. Thermal resistance from junction-to-case is 3.0 °C/W, and junction-to-ambient (PCB mount) is 50 °C/W on a 1" FR-4 square board-enabling stable 2.5 W continuous dissipation without heatsink.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports primary-side switching in offline SMPS up to 375 V DC bus |
| RDS(on) | 1.8 Ω @ VGS = 10 V - enables <3.5 W conduction loss at 3.1 A continuous drain current |
| Qg | 20 nC - allows efficient gate drive with standard 1-A peak drivers at 100–500 kHz |
| ID (TC = 100 °C) | 2.0 A - defines usable current limit under sustained thermal stress in compact layouts |
| EAS | 160 mJ - provides margin against single-pulse inductive energy in relay/snubberless designs |
| trr / Qrr | 270–600 ns / 1.4–3.0 μC - determines reverse recovery losses and EMI in freewheeling paths |
| RthJC | 3.0 °C/W - confirms direct thermal path to heatsink via exposed drain pad in DPAK |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount compatible with vapor-phase, infrared, or wave soldering. Dimensions per JEDEC outline: 6.09 mm × 6.54 mm × 1.78 mm (L × W × H), lead pitch 2.29 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures reliable turn-on with standard microcontroller outputs |
| D (Drain) | High-side power terminal | Exposed metal pad-must be connected to ground plane or heatsink for thermal management and low-inductance return path |
| S (Source) | Reference node | Provides return path for load current; used as local ground reference for gate driver feedback and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation in inductive load switching without external snubbers-3.1 A IAR, 4.2 mJ EAR |
| Dynamic dV/dt rating | 4.0 V/ns immunity prevents false turn-on during high-slew-rate transients in half-bridge configurations |
| Fast switching | 10 ns turn-on delay + 14 ns rise time at VDD = 200 V supports >300 kHz hard-switched operation |
| Surface-mount (DPAK) | Optimized for automated assembly and thermal performance on FR-4 PCBs with recommended 10.67 mm × 5.69 mm copper pads |
| Low Qgd/Qg ratio | 11/20 = 55% - improves Miller immunity and reduces switching loss sensitivity to gate drive impedance |
Applications
| Industrial Motor Drives | Offline AC-DC Power Supplies |
|---|---|
Use Scenario: Driving 24–48 V brushed DC motors in factory automation controllers with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: High-side switch controlling motor phase current; operates in linear and saturated regions during commutation. Use Value: Repetitive avalanche rating absorbs back-EMF spikes without clamping diodes; 1.8 Ω RDS(on) limits I²R heating at 3 A load current. | Use Scenario: Active clamp or synchronous rectifier in 30–60 W universal-input flyback converters. IC Role / Device Role / Timing Role: Secondary-side power switch handling 3.1 A peak forward current with body diode conduction during dead time. Use Value: 1.6 V VSD and 270 ns trr minimize conduction and recovery losses; DPAK thermal pad enables 2.5 W dissipation on standard PCB. |
| DC-DC Boost Converters | Lighting Ballasts & LED Drivers |
Use Scenario: Main switching element in 12 V input → 300 V output boost stages for PFC or HV LED arrays. IC Role / Device Role / Timing Role: Low-side switch operating at 100–250 kHz with unclamped inductive turn-off stress. Use Value: 160 mJ single-pulse avalanche energy withstands worst-case inductor energy dump; 400 V VDS provides 25% margin over 325 V rectified line. | Use Scenario: Dimmable constant-current LED driver with analog/PWM dimming interface driving 10–20 strings. IC Role / Device Role / Timing Role: Current-regulating switch in buck or buck-boost topology, cycling at 1–10 kHz for smooth dimming. Use Value: Fast 13 ns fall time and low Qg enable precise current pulse width control; Pb-free/ROHS-compliant packaging meets lighting industry standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFR320TR-GE3 | Same die, identical RDS(on), Qg, and avalanche ratings; differs only in halogen-free plating and GE3 suffix marking | No functional difference; accepted interchangeably in automotive and industrial designs requiring halogen-free compliance | Select SiHFR320TR-GE3 when RoHS+halogen-free certification is required by OEM procurement policy |
| IRFR3707ZCPBF | Lower 30 V VDS, 4.2 mΩ RDS(on), 44 nC Qg; not avalanche-rated; TO-252 package | Not suitable for 400 V applications; better for low-voltage high-current DC-DC where switching loss dominates | Choose IRFR3707ZCPBF only for ≤40 V systems needing lower conduction loss-never as drop-in replacement for IRFR320TR |
Compared with SiHFR320TR-GE3, IRFR320TR offers identical electrical performance but different material compliance labeling; versus IRFR3707ZCPBF, it trades higher RDS(on) for 400 V rating and avalanche ruggedness-making it the sole viable option for mains-referenced switching above 300 V DC.
Availability
IRFR320TR is available at Aetrix Electronics and suitable for industrial motor drives, offline AC-DC power supplies, and DC-DC boost converters requiring stable component supply across long production lifecycles.
Supply support for IRFR320TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.
The IRFR320TR belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered specifically for industrial and consumer power conversion systems demanding avalanche tolerance, fast switching, and surface-mount manufacturability.
FAQ
What is the maximum continuous drain current for IRFR320TR at 100 °C case temperature?
The IRFR320TR supports 2.0 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual board layout and ambient conditions. The IRFR320TR's 3.0 °C/W junction-to-case thermal resistance enables this current level when the drain pad is properly soldered to a thermal plane.
Does IRFR320TR have an integrated body diode, and what are its key recovery parameters?
Yes, the IRFR320TR includes an integral body diode with typical reverse recovery time (trr) of 270 ns and maximum 600 ns at TJ = 25 °C, IF = 3.3 A, and dI/dt = 100 A/μs. Its reverse recovery charge (Qrr) ranges from 1.4 to 3.0 μC. These values directly impact switching losses in synchronous rectification and freewheeling applications, and the IRFR320TR's Qrr is lower than many legacy 400 V MOSFETs due to optimized die structure.
Can IRFR320TR be used in avalanche mode, and what are the safe operating limits?
Yes, the IRFR320TR is explicitly repetitive avalanche rated: IAR = 3.1 A and EAR = 4.2 mJ per pulse, with pulse width limited by junction temperature. Single-pulse avalanche energy is 160 mJ. Safe operation requires limiting pulse width and duty cycle per Figure 11 in the datasheet and ensuring TJ does not exceed 150 °C. The IRFR320TR's ruggedized die design makes it suitable for unclamped inductive switching in relay drivers and solenoid controls.
What is the gate threshold voltage range for IRFR320TR, and how does it affect drive requirements?
The IRFR320TR has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C, measured at ID = 250 μA. This means reliable turn-on occurs above ~4.5 V, and full enhancement requires ≥10 V to achieve the specified 1.8 Ω RDS(on). The IRFR320TR is not a logic-level MOSFET; using 3.3 V or 5 V microcontroller outputs without level-shifting will result in high conduction loss and thermal instability.
Is IRFR320TR compatible with standard DPAK footprint and reflow profiles?
Yes, the IRFR320TR uses JEDEC-standard TO-252 (DPAK) packaging with documented dimensions in Vishay's Package Outline 71197. It is qualified for vapor-phase, infrared, and wave soldering. Recommended minimum PCB pads are 10.67 mm × 5.69 mm for the drain tab, per Application Note 826. The IRFR320TR's lead (Pb)-free and halogen-free construction complies with IPC-J-STD-020D reflow peak temperature guidelines up to 260 °C for 10 seconds.
IRFR320TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.8Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR320TR FAQ
1.How can I place an order for IRFR320TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR320TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR320TR reliable?
The price and inventory of IRFR320TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR320TR is usually 5 days.
3.What payment methods are accepted for IRFR320TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR320TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR320TR?
IRFR320TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR320TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR320TR?
For technical support, including IRFR320TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR320TR requirements.
6.How does Aetrix verify that IRFR320TR is sourced from the original manufacturer or authorized distributors?
All IRFR320TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR320TR meets industry standards.
7.What is the process for return or replacement of IRFR320TR?
All IRFR320TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR320TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR320TR part is unused and in its original packaging.
Return procedure for IRFR320TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR320TR Tags
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