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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

UMW IRFR4105TR

Name: IRFR4105TR
Brand: UMW
SKU: IRFR4105TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4105TR

Manufacturer:: UMW

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRFR4105TR.pdf

Description:: MOSFET N-CH 55V 27A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,500

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Product details

Overview

IRFR4105TR from Infineon Technologies (formerly International Rectifier) is a 55 V, 27 A N-channel surface-mount Power MOSFET in D-PAK (TO-252AA) package, featuring 45 mΩ R_DS(on) at V_GS = 10 V, fully avalanche-rated, and optimized for high-efficiency DC-DC converters and motor control switches in industrial power supplies.

For engineers reviewing the IRFR4105TR datasheet, IRFR4105TR pinout, IRFR4105TR application, or IRFR4105TR equivalent, key selection criteria include its 55 V V_DS, 45 mΩ on-resistance, 34 nC total gate charge, 100 A pulsed drain current capability, and D-PAK thermal performance with R_θJC = 2.2 °C/W - critical for compact, high-current switching designs.

Technical Context

This fifth-generation HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining fast switching (t_r = 49 ns, t_f = 40 ns) and robust unclamped inductive switching capability (E_AS = 65 mJ). Its body diode exhibits t_rr = 57–86 ns and Q_rr = 130–200 nC under defined di/dt conditions.

The MOSFET operates across –55 °C to +175 °C junction temperature range, with gate threshold voltage (V_GS(th)) specified from 2.0 V to 4.0 V and forward transconductance (g_fs) of 6.5 S at V_DS = 25 V, enabling reliable gate drive compatibility with standard 10 V logic-level controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage; defines upper limit for DC bus or flyback clamp applications
R_DS(on)	45 mΩ @ V_GS = 10 V - Directly determines I²R conduction loss in continuous high-current paths
I_D (T_C = 25°C)	27 A - Continuous current rating under ideal heatsinking; derates linearly above 25°C case temp
Q_g	34 nC - Total gate charge; sets minimum driver strength and switching loss budget
E_AS	65 mJ - Single-pulse avalanche energy; enables safe operation during inductive turn-off transients
t_r/t_f	49/40 ns - Rise/fall times at V_DD = 28 V, I_D = 16 A; constrains maximum practical switching frequency
R_θJC	2.2 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for high-power density layouts

Pinout & Package

IRFR4105TR is housed in a surface-mount D-PAK (TO-252AA) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in a straight-line configuration: Source (S), Gate (G), Drain (D).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path and internal body diode cathode	Low-inductance source connection essential for minimizing shoot-through risk in half-bridge topologies
Pin 2 (Gate)	Control electrode for channel formation	High-impedance input requiring low-capacitance PCB routing to avoid ringing and false triggering
Pin 3 (Drain)	Main power output terminal and thermal interface	Exposed copper pad must be soldered to large PCB copper area or heatsink to maintain T_J ≤ 175°C

Key Features

Feature	Design Value
Fully avalanche rated	65 mJ single-pulse E_AS and 6.8 mJ repetitive E_AR - eliminates need for external snubbers in inductive load switching
Ultra-low R_DS(on)	45 mΩ at 10 V drive - reduces conduction loss by >30% vs. prior-gen 55 V MOSFETs at same current density
Fast body diode recovery	t_rr = 57 ns (typ), Q_rr = 130 nC - minimizes reverse recovery loss in synchronous rectification and H-bridge freewheeling
Thermally enhanced D-PAK	R_θJC = 2.2 °C/W - supports >20 W continuous dissipation with minimal heatsink footprint
Lead-free and RoHS compliant	Pb-free plating and halogen-free molding compound - meets IPC-J-STD-609A and EU Directive 2011/65/EU requirements

Applications

Industrial Motor Drives

DC-DC Converter Primary Switch

Use Scenario: Brushless DC motor phase-leg switching in HVAC blowers and pump controllers operating at 24–48 V DC bus.

IC Role / Device Role / Timing Role: High-side/low-side N-channel switch in 3-phase inverter stage; handles 15–25 A peak phase current with <100 ns dead-time tolerance.

Use Value: 45 mΩ R_DS(on) limits conduction loss to <1.7 W per FET at 20 A, enabling fanless enclosure design.

Use Scenario: Primary-side switch in isolated 48 V → 12 V synchronous buck converter for telecom power shelves.

IC Role / Device Role / Timing Role: Main power switch driven by PWM controller; operates at 200–500 kHz with hard-switched topology.

Use Value: 34 nC Q_g and 49/40 ns switching times enable efficient operation up to 350 kHz without excessive gate drive loss.

Uninterruptible Power Supply (UPS) Inverter

Automotive Body Control Module (BCM)

Use Scenario: Half-bridge output stage in 120/230 V AC inverters for small UPS systems with battery backup.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during sinusoidal PWM modulation; subjected to repetitive avalanche stress.

Use Value: 65 mJ E_AS withstands worst-case inductive kickback during grid-synchronization transitions without failure.

Use Scenario: Load switch for high-current solenoids (fuel injectors, door locks) in 12 V automotive BCMs.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated current sensing; operates with 10 ms–2 s pulse durations.

Use Value: 100 A pulsed current rating and –55 °C to +175 °C T_J range ensure reliability across engine bay thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DS, 50 mΩ R_DS(on), TO-220 package	Higher R_DS(on) and through-hole mounting limit power density and thermal performance in space-constrained PCBs	Preferred only where legacy TO-220 layout exists and 5 mΩ penalty is acceptable
DMN601DWK-7	60 V V_DS, 48 mΩ R_DS(on), SOT-223 package, lower I_D = 4.8 A	Lower current rating and higher thermal resistance restrict use to sub-5 A loads	Suitable only for auxiliary bias rails or low-power signal switching, not main power stages

Compared with STP55NF06L and DMN601DWK-7, IRFR4105TR delivers superior current density (27 A in D-PAK), lower conduction loss (45 mΩ), and proven avalanche ruggedness - making it the optimal choice for thermally demanding, medium-power switching applications requiring surface-mount integration.

Availability

IRFR4105TR is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter primary switches, and uninterruptible power supply (UPS) inverters requiring stable component supply and long-term production continuity.

Supply support for IRFR4105TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The IRFR4105TR belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and automotive subsystems.

FAQ

Is IRFR4105TR suitable for 12 V automotive applications?

Yes. With a 55 V V_DS rating and –55 °C to +175 °C operating junction temperature range, IRFR4105TR safely handles automotive load-dump transients (up to ~40 V) and under-hood thermal extremes. Its 27 A continuous current supports solenoid, fan, and lighting drivers in BCMs and body modules.

What is the recommended gate resistor value for hard-switched operation at 300 kHz?

A 10 Ω to 18 Ω gate resistor is recommended for 300 kHz operation. This balances switching speed (minimizing t_r/t_f losses) against gate drive overshoot and EMI. At 18 Ω, measured td(on)/td(off) are 7.0/31 ns - sufficient for clean edge control without excessive driver loading.

Does IRFR4105TR require a heatsink in a 2-layer 1" × 1" FR-4 PCB layout?

Yes, for continuous operation above ~8 A. With R_θJA = 50 °C/W on a 1" square PCB, dissipating 5 W raises T_J by 250 °C - exceeding the 175 °C limit. A 2 cm² copper pour with thermal vias to inner ground plane reduces R_θJA to ~35 °C/W, supporting ~12 A continuous current without external heatsink.

Can IRFR4105TR replace IRFR3710 in an existing design?

Yes, with validation. IRFR4105TR has lower R_DS(on) (45 mΩ vs. 50 mΩ), similar Q_g (34 nC vs. 35 nC), and identical D-PAK package. However, its higher ID (27 A vs. 21 A) and improved E_AS (65 mJ vs. 53 mJ) may alter thermal and transient behavior - verify junction temperature and avalanche margin under worst-case load conditions.

IRFR4105TR Specifications

Product attributes: Attribute value

Manufacturer:: UMW

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRFR4105TR FAQ

1.How can I place an order for IRFR4105TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4105TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4105TR reliable?

The price and inventory of IRFR4105TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105TR is usually 5 days.

3.What payment methods are accepted for IRFR4105TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4105TR?

IRFR4105TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4105TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4105TR?

For technical support, including IRFR4105TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105TR requirements.

6.How does Aetrix verify that IRFR4105TR is sourced from the original manufacturer or authorized distributors?

All IRFR4105TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105TR meets industry standards.

7.What is the process for return or replacement of IRFR4105TR?

All IRFR4105TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4105TR part is unused and in its original packaging.

Return procedure for IRFR4105TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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