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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR48ZTRPBF

Name: IRFR48ZTRPBF
Brand: Infineon Technologies
SKU: IRFR48ZTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR48ZTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR48ZTRPBF.pdf

Description:: MOSFET N-CH 55V 42A DPAK

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Product details

Overview

IRFR48ZTRPBF from Infineon Technologies is a 55V, 42A N-channel DPAK (TO-252) HEXFET® Power MOSFET with 11 mΩ R_DS(on) at V_GS = 10 V, 175°C junction rating, fast switching (t_r = 61 ns, t_f = 35 ns), and rated repetitive avalanche energy up to 74 mJ - used in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFR48ZTRPBF datasheet, IRFR48ZTRPBF pinout, IRFR48ZTRPBF application, or IRFR48ZTRPBF equivalent, key selection criteria include its low conduction loss (8.86–11 mΩ), 175°C thermal capability, body diode recovery performance (Q_rr = 14–28 nC, t_rr = 20–40 ns), and DPAK package suitability for high-current PCB-mount thermal management.

Technical Context

This device implements a planar silicon-gate N-channel enhancement-mode MOSFET architecture optimized for high-current, medium-voltage switching. Its design integrates ultra-low R_DS(on) per die area via advanced trenchless process technology and features a robust integral body diode with controlled reverse recovery characteristics.

The MOSFET supports unclamped inductive switching with validated repetitive avalanche operation up to T_jmax, enabled by thermal design margin and transient impedance profile (Z_thJC). Gate charge parameters (Q_g = 40–60 nC, Q_gd = 15 nC) indicate moderate drive strength requirements for efficient hard-switching at frequencies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; defines safe operating range in 48V bus systems.
R_DS(on)	8.86–11 mΩ @ V_GS = 10 V - Enables <1.8 W conduction loss at 42 A, critical for thermal budget in compact power stages.
I_D (T_C = 25°C)	42 A - Continuous drain current limited by silicon; requires heatsinking or forced air above ~60°C case temperature.
t_r/t_f	61 ns / 35 ns - Fast edge rates reduce switching losses in PWM applications up to 500 kHz.
Q_rr	14–28 nC - Low reverse recovery charge minimizes shoot-through risk and EMI in synchronous buck topologies.
T_J max	175°C - Allows operation in high-ambient environments (e.g., automotive under-hood, industrial enclosures) without derating.
E_AS	250 mJ (tested), 74 mJ (thermally limited) - Supports reliable unclamped inductive turn-off in motor gate drivers and solenoid controls.

Pinout & Package

IRFR48ZTRPBF uses the DPAK (TO-252) surface-mount package with exposed drain pad for enhanced thermal conduction. The three-terminal configuration supports high-current PCB routing and standard reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Internally connected to exposed copper pad; primary thermal path to PCB ground plane.
Source (S)	Reference node for gate drive and current return	Low-inductance source connection (L_S = 7.5 nH); critical for minimizing gate oscillation during switching.
Gate (G)	Control electrode for channel modulation	High-impedance input requiring <60 nC total charge; sensitive to ringing due to C_iss = 1720 pF.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.86 mΩ typical enables >96% efficiency in 48V/30A DC-DC stages at 100 kHz.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in relay/motor drive circuits.
Fast body diode recovery	t_rr = 20–40 ns and Q_rr = 14–28 nC support synchronous rectification without cross-conduction penalties.
175°C junction rating	Enables full-rated current operation in sealed enclosures or high-ambient industrial environments without thermal throttling.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-side/low-side switching in 24–48V brushed DC motor controllers with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side N-channel switch handling continuous 37A load current and absorbing inductive kickback during freewheeling.

Use Value: 11 mΩ R_DS(on) reduces I²R losses by >30% vs. legacy 20 mΩ devices, lowering heatsink mass by 40%.

Use Scenario: Secondary-side synchronous rectification in isolated 48V-to-12V telecom DC-DC converters.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side switch with precise timing control.

Use Value: Q_rr = 14–28 nC and fast t_f = 35 ns minimize dead-time losses and improve light-load efficiency by 1.2%.

Industrial Power Supply OR-ing

Automotive Load Switch

Use Scenario: Redundant 24V power rail OR-ing in PLC backplanes with hot-swap capability.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing bidirectional current blocking and low-loss forward conduction.

Use Value: 55V V_DSS and 175°C rating ensure reliability during 40V transients and ambient temperatures up to 85°C.

Use Scenario: 12V battery-fed electronic control unit (ECU) power distribution with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: High-side load switch controlling power to subsystems (e.g., sensors, actuators) with fast fault response.

Use Value: Repetitive avalanche rating allows safe interruption of inductive loads (e.g., fuel injectors) without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF10L	100V V_DSS, 40A I_D, 14 mΩ R_DS(on), TO-220 package	Higher voltage margin but larger footprint and higher conduction loss; unsuitable for space-constrained DPAK layouts.	Select when 100V system transients require extra headroom and through-hole mounting is acceptable.
IXTP44N10P	100V V_DSS, 44A I_D, 12.5 mΩ R_DS(on), TO-220AB package	Higher R_DS(on) and no rated repetitive avalanche; lacks body diode Q_rr specification for synchronous rectification.	Prefer only in non-avalanche, non-synchronous applications where voltage margin outweighs thermal and recovery trade-offs.

Compared with STP40NF10L and IXTP44N10P, IRFR48ZTRPBF offers superior thermal density (DPAK), lower conduction loss at 48V, and documented repetitive avalanche capability - making it optimal for compact, high-reliability switching in motor drives and DC-DC converters.

Availability

IRFR48ZTRPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial power supplies requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for IRFR48ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in medium-voltage power conversion and motor control systems.

FAQ

Is IRFR48ZTRPBF lead-free and RoHS-compliant?

Yes, IRFR48ZTRPBF is lead-free and fully compliant with EU RoHS Directive 2011/65/EU and JEDEC JS-709B. The "PbF" suffix confirms lead-free termination, and the device meets halogen-free requirements per IEC 61249-2-21.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum gate-to-source voltage is ±20 V, but Infineon specifies 10 V as the nominal drive level for full R_DS(on) specification. Driving above 15 V provides no significant R_DS(on) improvement and increases gate oxide stress risk; 12 V is the practical upper limit for robust long-term operation.

Can IRFR48ZTRPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized resistance increases with junction temperature) enables stable current sharing. Layout must ensure matched gate drive loop inductance (<2 nH difference) and symmetrical thermal coupling to avoid thermal runaway.

Does the body diode support continuous conduction mode (CCM) in synchronous rectification?

Yes - the body diode is rated for continuous source current up to 37 A at T_C = 25°C and exhibits controlled reverse recovery (t_rr = 20–40 ns, Q_rr = 14–28 nC), enabling reliable CCM operation in buck-derived topologies when driven with appropriate dead-time control.

IRFR48ZTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1720 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 91W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR48ZTRPBF FAQ

1.How can I place an order for IRFR48ZTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR48ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR48ZTRPBF reliable?

The price and inventory of IRFR48ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR48ZTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR48ZTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR48ZTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR48ZTRPBF?

IRFR48ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR48ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR48ZTRPBF?

For technical support, including IRFR48ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR48ZTRPBF requirements.

6.How does Aetrix verify that IRFR48ZTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR48ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR48ZTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR48ZTRPBF?

All IRFR48ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR48ZTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR48ZTRPBF part is unused and in its original packaging.

Return procedure for IRFR48ZTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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