Infineon Technologies IRFR9120NTRLPBF

Overview

IRFR9120NTRLPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in D-Pak (TO-252AA) package, rated for −100 V V_DS, 4.7 A I_D (continuous), and 12 Ω R_DS(on) at V_GS = −10 V. It serves as a high-side load switch or reverse polarity protection device in DC power rails up to 48 V, with fast switching (t_on ≈ 25 ns, t_off ≈ 45 ns) and low gate charge (Q_G = 12 nC).

For engineers reviewing the IRFR9120NTRLPBF datasheet, IRFR9120NTRLPBF pinout, IRFR9120NTRLPBF application, or IRFR9120NTRLPBF equivalent, key selection criteria include verified R_DS(on) at −10 V, guaranteed avalanche energy rating (E_AS = 125 mJ), body diode forward voltage (V_SD = 1.7 V @ −1.7 A), and lead-free RoHS-compliant packaging.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for ruggedness in inductive switching and reverse-battery protection. Its gate threshold voltage (V_GS(th)) ranges from −2.0 V to −4.0 V, enabling reliable turn-on with standard logic-level drive down to −5 V, while maintaining low leakage (I_DSS ≤ −1 µA @ −100 V).

Thermal performance is characterized by R_θJC = 3.5 °C/W and R_θJA = 62 °C/W on 1-in² 2-oz copper, supporting continuous operation up to T_J = 150 °C. The device features fully specified avalanche capability and is qualified per JEDEC JESD47.

Key Specifications

Pinout & Package

IRFR9120NTRLPBF uses the D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Pin assignment is standardized across D-Pak P-channel devices: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRFR9120NTRLPBF, IRFR9024NTRLPBF trades efficiency for cost in low-current protection, while DMT6009LPS-13 improves conduction performance but mandates layout change-making IRFR9120NTRLPBF optimal for balanced performance, compatibility, and field-replaceability.

Availability

IRFR9120NTRLPBF is available at Aetrix Electronics and suitable for reverse polarity protection, high-side load switching, DC motor control, and OR-ing applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFR9120NTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The StrongIRFET™ product line, which includes IRFR9120NTRLPBF, is engineered for high-reliability power switching in harsh environments-targeting industrial automation, transportation, and renewable energy systems where ruggedness and avalanche tolerance are mandatory.

FAQ

What is the maximum safe operating temperature for IRFR9120NTRLPBF?

The absolute maximum junction temperature is 150 °C. Derating begins at T_C = 25 °C, with continuous I_D dropping linearly to zero at T_C = 100 °C. Thermal design must ensure R_θJA ≤ 62 °C/W on standard FR-4 with 1-in² 2-oz copper, and R_θJC = 3.5 °C/W to heatsink.

Can IRFR9120NTRLPBF be driven directly from a 3.3 V microcontroller GPIO?

No. With V_GS(th) up to −4.0 V and R_DS(on) specified only at −10 V, 3.3 V logic cannot achieve low on-resistance. A level-shifting gate driver (e.g., TC4427) or −12 V supply is required to ensure <12 Ω conduction and avoid thermal runaway under load.

Does IRFR9120NTRLPBF have integrated ESD protection?

It includes basic gate oxide protection rated to HBM ±2 kV per JEDEC JESD22-A114, but no dedicated ESD clamp diodes. External TVS (e.g., SMAJ5.0A) on gate-to-source is recommended in high-noise environments or manual handling scenarios to prevent latent damage.

How does the body diode performance compare to discrete Schottky diodes?

The body diode has V_SD = 1.7 V @ −1.7 A and t_rr = 55 ns-higher forward drop than Schottky (0.3–0.5 V) but significantly softer recovery. In OR-ing, this increases conduction loss but eliminates hard-switching EMI; in reverse-protection, it avoids reverse leakage issues common in high-temp Schottky devices.