Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR9210TRLPBF

Name: IRFR9210TRLPBF
Brand: Vishay Siliconix
SKU: IRFR9210TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR9210TRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR9210TRLPBF.pdf

Description:: MOSFET P-CH 200V 1.9A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,644

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR9210TRLPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -200 V drain-source voltage, 3.0 Ω R_DS(on) at V_GS = -10 V, and -1.9 A continuous drain current at T_C = 25 °C. It delivers fast switching with 8.9 nC total gate charge and supports unclamped inductive switching with 300 mJ single-pulse avalanche energy - ideal for high-voltage DC-DC converters and motor control H-bridge high-side switches.

For engineers reviewing the IRFR9210TRLPBF datasheet, IRFR9210TRLPBF pinout, IRFR9210TRLPBF application, or IRFR9210TRLPBF equivalent, key selection criteria include its -200 V blocking capability, repetitive avalanche rating, dynamic dV/dt tolerance of -5.0 V/ns, thermal resistance of 5.0 °C/W junction-to-case, and compatibility with standard DPAK PCB footprints per Vishay's recommended pad layout (72594).

Technical Context

This device operates as a high-voltage P-channel switch in off-line power supplies and industrial controls, where negative gate drive enables high-side configuration without level-shifting circuitry. Its rugged design includes repetitive avalanche capability (I_AR = -1.9 A), body diode recovery time of 110–220 ns, and integrated reverse p-n junction diode rated for -1.9 A continuous source-drain current.

The MOSFET features low gate charge (Q_g = 8.9 nC, Q_gd = 3.9 nC) and transconductance of 0.98 S, enabling efficient gate drive with minimal Miller effect. Thermal performance is optimized for surface-mount operation: R_thJC = 5.0 °C/W and R_thJA = 50 °C/W on 1" FR-4 PCB, supporting up to 2.5 W power dissipation in typical board-mounted applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - supports high-voltage DC bus isolation in industrial power systems
R_DS(on)	3.0 Ω @ V_GS = -10 V - defines conduction loss in high-side switch applications
I_D (cont.)	-1.9 A @ T_C = 25 °C - sets maximum steady-state load current under heatsink conditions
Q_g	8.9 nC - determines gate driver power requirement and switching speed trade-off
E_AS	300 mJ - enables robust operation during inductive load turn-off without external snubbers
dV/dt	-5.0 V/ns - ensures immunity to parasitic turn-on in noisy high-dV/dt environments
R_thJC	5.0 °C/W - allows direct thermal path to heatsink via exposed drain pad in DPAK

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; compatible with vapor-phase, infrared, and wave soldering per Vishay specification S26-0614.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to load return or ground in high-side configuration
Pin 2 (Gate)	Control input	Accepts negative voltage relative to source to turn on; threshold range -2.0 to -4.0 V
Pin 3 (Drain)	Power output / high-voltage node	Exposed metal pad on underside - electrically and thermally connected to internal drain

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under inductive switching stress without derating, with I_AR = -1.9 A and E_AR = 2.5 mJ
Dynamic dV/dt rating	-5.0 V/ns immunity prevents false turn-on during fast voltage transients in motor drives
Surface-mount DPAK	Optimized for automated assembly and thermal transfer via exposed drain pad; footprint matches JEDEC TO-252AA
Fast switching	Turn-on delay 8.0 ns, rise time 12 ns, fall time 13 ns - reduces switching losses in PWM applications
Body diode with low Q_rr	Reverse recovery charge 0.56–1.1 μC - minimizes shoot-through risk and EMI in bridge topologies

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: High-side switch in half-bridge or H-bridge drivers for 100–200 V brushed DC motors. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with gate driven referenced to source. Use Value: Avalanche rating and -5.0 V/ns dV/dt immunity prevent failure during inductive flyback and EMI-rich motor commutation.	Use Scenario: Primary-side synchronous rectifier or active clamp switch in isolated flyback or forward converters. IC Role / Device Role / Timing Role: High-voltage P-channel switch managing energy transfer and voltage clamping at up to -200 V. Use Value: 300 mJ single-pulse avalanche energy eliminates need for external clamping components in transient overvoltage events.
Off-Line Power Supplies	Programmable Load Switches
Use Scenario: Input protection or hold-up switch in AC/DC front-end stages operating from rectified 170 V_DC bus. IC Role / Device Role / Timing Role: High-side disconnect switch controlling bulk capacitor charging and fault isolation. Use Value: -200 V V_DS rating provides 30% margin above peak rectified line voltage, ensuring long-term reliability.	Use Scenario: Programmable power rail enable in test equipment or industrial PLC modules requiring controlled 100+ V supply sequencing. IC Role / Device Role / Timing Role: Voltage-controlled power switch activated by microcontroller GPIO through level-shifter or optocoupler. Use Value: Low 3.0 Ω R_DS(on) limits voltage drop and self-heating during sustained -1.9 A loads, supporting stable rail regulation.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: High-side switch in half-bridge or H-bridge drivers for 100–200 V brushed DC motors.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with gate driven referenced to source.

Use Value: Avalanche rating and -5.0 V/ns dV/dt immunity prevent failure during inductive flyback and EMI-rich motor commutation.

Use Scenario: Primary-side synchronous rectifier or active clamp switch in isolated flyback or forward converters.

IC Role / Device Role / Timing Role: High-voltage P-channel switch managing energy transfer and voltage clamping at up to -200 V.

Use Value: 300 mJ single-pulse avalanche energy eliminates need for external clamping components in transient overvoltage events.

Off-Line Power Supplies

Programmable Load Switches

Use Scenario: Input protection or hold-up switch in AC/DC front-end stages operating from rectified 170 V_DC bus.

IC Role / Device Role / Timing Role: High-side disconnect switch controlling bulk capacitor charging and fault isolation.

Use Value: -200 V V_DS rating provides 30% margin above peak rectified line voltage, ensuring long-term reliability.

Use Scenario: Programmable power rail enable in test equipment or industrial PLC modules requiring controlled 100+ V supply sequencing.

IC Role / Device Role / Timing Role: Voltage-controlled power switch activated by microcontroller GPIO through level-shifter or optocoupler.

Use Value: Low 3.0 Ω R_DS(on) limits voltage drop and self-heating during sustained -1.9 A loads, supporting stable rail regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9120PbF	V_DS = -200 V, R_DS(on) = 4.5 Ω @ -10 V, Q_g = 7.0 nC - higher on-resistance, lower gate charge	Suitable for lower-current, lower-loss gate drive scenarios but less efficient at >1 A continuous load	Select when gate drive strength is limited and conduction loss budget allows higher R_DS(on)
SiHFR9210-GE3	Same V_DS, R_DS(on), Q_g, and package; RoHS-compliant with halogen-free construction	Drop-in replacement for lead-free/halogen-free compliance programs; identical electrical and thermal behavior	Choose for new designs requiring Vishay's "-GE3" environmental compliance without performance compromise

Compared with IRFR9210TRLPBF, IRFR9120PbF trades higher conduction loss for reduced gate drive demand, while SiHFR9210-GE3 offers identical performance with enhanced environmental compliance - making IRFR9210TRLPBF optimal for legacy-replacement or cost-sensitive high-voltage switching where Pb-free is not mandated.

Availability

IRFR9210TRLPBF is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC converters, and off-line power supply designs requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IRFR9210TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The IRFR9210TRLPBF belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for ruggedness in inductive switching, avalanche energy handling, and surface-mount thermal performance in space-constrained power systems.

FAQ

What is the maximum continuous drain current for IRFR9210TRLPBF at 100 °C case temperature?

The IRFR9210TRLPBF supports -1.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be validated against actual board layout, copper area, and ambient conditions. The IRFR9210TRLPBF datasheet (S26-0614) confirms this value applies under standard mounting conditions on FR-4 PCB.

Does IRFR9210TRLPBF have a built-in body diode, and what are its key parameters?

Yes, the IRFR9210TRLPBF integrates a body diode with -1.9 A continuous source-drain current rating, -5.8 V forward voltage at T_J = 25 °C and I_S = -1.9 A, and reverse recovery time of 110–220 ns. Its Q_rr is 0.56–1.1 μC, critical for minimizing switching losses in synchronous rectification or freewheeling paths. These values are measured per the specifications in document 91281.

What is the gate-source threshold voltage range for IRFR9210TRLPBF?

The IRFR9210TRLPBF has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at V_DS = V_GS and I_D = -250 μA, per the Static Specifications table. This negative threshold confirms its P-channel enhancement-mode operation and informs minimum gate drive swing required for full enhancement. The IRFR9210TRLPBF datasheet specifies this across temperature and process variation.

Can IRFR9210TRLPBF be used in avalanche mode, and what energy level is rated?

Yes, the IRFR9210TRLPBF is repetitively avalanche rated with I_AR = -1.9 A and E_AR = 2.5 mJ, and single-pulse avalanche rated at E_AS = 300 mJ under defined test conditions (V_DD = -50 V, L = 124 mH, R_g = 25 Ω). These ratings are validated per Figure 12 and notes in the IRFR9210TRLPBF datasheet (91281), enabling use in unclamped inductive switching without external protection.

What is the thermal resistance from junction to case for IRFR9210TRLPBF, and how does it impact heatsinking?

The IRFR9210TRLPBF has a maximum junction-to-case (drain) thermal resistance (R_thJC) of 5.0 °C/W, measured from die to the exposed drain pad. This low value enables efficient heat transfer to an external heatsink or copper plane, supporting up to 25 W power dissipation when properly mounted. Designers must ensure low-thermal-resistance interface between the IRFR9210TRLPBF drain pad and heatsink per Vishay's mounting guidelines.

IRFR9210TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 1.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR9210TRLPBF FAQ

1.How can I place an order for IRFR9210TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR9210TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR9210TRLPBF reliable?

The price and inventory of IRFR9210TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR9210TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR9210TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR9210TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR9210TRLPBF?

IRFR9210TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR9210TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR9210TRLPBF?

For technical support, including IRFR9210TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR9210TRLPBF requirements.

6.How does Aetrix verify that IRFR9210TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR9210TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR9210TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR9210TRLPBF?

All IRFR9210TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR9210TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR9210TRLPBF part is unused and in its original packaging.

Return procedure for IRFR9210TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…