Infineon Technologies IRFS7437TRL7PP

Overview

IRFS7437TRL7PP from Infineon Technologies is a 40 V, 195 A (package-limited), N-channel D2PAK-7L HEXFET® Power MOSFET with typ. R_DS(on) of 1.1 mΩ at V_GS = 10 V, 25 °C, optimized for high-current synchronous rectification and half-bridge switching in DC/DC converters and motor drives. It features enhanced body diode dV/dt and dI/dt capability, 1040 A pulsed source current rating, and 231 mJ single-pulse avalanche energy.

For engineers reviewing the IRFS7437TRL7PP datasheet, IRFS7437TRL7PP pinout, IRFS7437TRL7PP application, or IRFS7437TRL7PP equivalent, key selection criteria include its 1.1 mΩ on-resistance at 100 A, 150 nC total gate charge, 7437 pF input capacitance, 1097 pF output capacitance, and validated performance in PWM inverterized topologies up to 175 °C junction temperature.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted charge balancing to achieve ultra-low R_DS(on) while maintaining robust unclamped inductive switching (UIS) capability. Its dynamic parameters-including 51 nC Q_gd, 41 nC Q_gs, and 37 ns t_rr-are fully characterized across temperature for hard-switching and resonant-mode designs.

The device integrates an intrinsic fast-recovery body diode rated for 285 A continuous source current and 1040 A pulsed current, with reverse recovery charge (Q_rr) of 34 nC at 25 °C and 36 nC at 125 °C under 100 A forward current and 100 A/μs di/dt. Thermal design is supported by R_θJC = 0.65 °C/W and validated PCB-mount transient impedance curves.

Key Specifications

Pinout & Package

IRFS7437TRL7PP is housed in a surface-mount D2PAK-7L (TO-263-7) package with exposed drain pad for thermal enhancement and seven terminals: three drain pins (D1–D3), one gate (G), one source (S), and two Kelvin source (KS1, KS2) connections for accurate gate drive referencing and low-inductance current sensing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with STL220N4F7AG and IXFH40N40P3, IRFS7437TRL7PP uniquely balances ultra-low R_DS(on), integrated Kelvin sensing, and validated 175 °C operation-making it optimal for space-constrained, high-efficiency 12–48 V motor and power conversion systems where thermal management and current accuracy are critical.

Availability

IRFS7437TRL7PP is available at Aetrix Electronics and suitable for brushed motor drive, BLDC inverter, and synchronous rectifier applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and automotive-tier production.

Supply support for IRFS7437TRL7PP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in battery-powered and industrial power conversion systems operating up to 175 °C junction temperature.

FAQ

What is the maximum continuous drain current for IRFS7437TRL7PP at 100 °C case temperature?

The maximum continuous drain current at T_C = 100 °C is 208 A (silicon-limited) per the Absolute Maximum Ratings table. However, the package-limited rating is 195 A at T_C = 25 °C, and derating follows the linear derating factor of 1.5 W/°C beyond 25 °C-yielding ~150 A usable current at T_C = 100 °C for sustained operation.

Does IRFS7437TRL7PP support Kelvin source sensing, and how are KS1/KS2 used?

Yes-IRFS7437TRL7PP features two dedicated Kelvin source terminals (KS1, KS2) electrically isolated from the main source (S) pin. These connect directly to the gate driver's source reference and current-sense amplifier inputs to eliminate voltage drop errors caused by source inductance during high di/dt switching, enabling accurate gate threshold control and real-time current monitoring.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

For 100 kHz hard-switched operation with 10 V gate drive, a 5 Ω series gate resistor is recommended to balance switching speed (minimizing t_r/t_f) and gate oscillation damping. This value is derived from the 2.2 Ω internal gate resistance and 150 nC Q_g, targeting ~35 ns effective turn-on delay and <60 ns rise time while limiting peak gate current to <2 A.

Can IRFS7437TRL7PP be used in parallel configurations, and what layout considerations apply?

Yes-its D2PAK-7L package with three paralleled drain pins and dual Kelvin sources supports robust paralleling. Critical layout requirements include symmetrical PCB copper pour for all drains, matched gate trace lengths with individual 5 Ω resistors, and Kelvin source routing directly to the controller's sense node-avoiding shared return paths that induce imbalance above 50 A per device.