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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7537TRLPBF

Name: IRFS7537TRLPBF
Brand: Infineon Technologies
SKU: IRFS7537TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7537TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7537TRLPBF.pdf

Description:: MOSFET N-CH 60V 173A D2PAK

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Product details

Overview

IRFS7537TRLPBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 173 A N-channel enhancement-mode HEXFET® Power MOSFET in D2-Pak (TO-263) package, optimized for high-current synchronous rectification and half/full-bridge motor drive topologies. It delivers 2.75 mΩ typical R_DS(on) at V_GS = 10 V, supports 700 A pulsed drain current, and features enhanced body diode dV/dt (10 V/ns) and dI/dt capability for robust BLDC and brushed motor control in battery-powered inverters.

For engineers reviewing the IRFS7537TRLPBF datasheet, IRFS7537TRLPBF pinout, IRFS7537TRLPBF application, or IRFS7537TRLPBF equivalent, key selection criteria include its 60 V V_DS, 2.75 mΩ R_DS(on), 142 nC total gate charge, 100 A continuous ID at T_C = 100 °C, and avalanche-rated 270 mJ single-pulse energy - critical for resonant converters and OR-ing power switches.

Technical Context

This MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted source metallization to achieve low R_DS(on) × Q_g figure-of-merit (≈390 Ω·nC). Its gate threshold voltage (2.1–3.7 V) enables reliable 5 V logic-level drive while maintaining noise immunity, and the fully characterized C_iss/C_oss/C_rss (7020/640/395 pF) supports precise switching loss modeling in hard-switched DC/DC stages.

The device integrates a fast, soft-recovery body diode with 39 ns t_rr, 46 nC Q_rr, and 2.1 A I_RRM at 25 °C - enabling efficient synchronous rectification without external Schottky diodes in 48 V telecom and server PSUs. Thermal resistance R_θJC = 0.65 °C/W ensures stable operation up to 175 °C junction temperature under forced-air cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 48 V nominal bus systems with 20 % overvoltage margin for transient suppression in industrial motor drives.
R_DS(on) max	3.30 mΩ @ V_GS = 10 V, I_D = 100 A - Enables ≤0.33 W conduction loss at 100 A, reducing heatsink requirements in high-power inverters.
I_D cont	173 A @ T_C = 25 °C - Sustains peak load currents in 3 kW BLDC controllers without derating when mounted on 1"² FR-4 PCB.
Q_g	142 nC typ. - Determines gate driver power demand; requires ≥2 A peak drive capability for <100 ns turn-on in 100 kHz PWM stages.
E_AS	270 mJ single-pulse - Withstands unclamped inductive switching events in half-bridge leg shoot-through scenarios up to L = 54 µH.
t_r/t_f	105/84 ns - Enables clean 100–200 kHz switching in LLC resonant converters with minimal overlap loss.
V_SD	1.2 V @ I_S = 100 A - Low forward drop reduces reverse conduction loss during dead-time in synchronous buck regulators.

Pinout & Package

IRFS7537TRLPBF uses the D2-Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical performance. The 3-pin configuration supports high-current PCB routing with low-inductance source return paths.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–20 V V_GS; 2.0 Ω internal gate resistance limits ringing in high-dV/dt environments.
Pin 2 (D)	Drain	Main power output node; electrically connected to exposed copper tab - must be soldered to large copper pour for thermal management.
Pin 3 (S)	Source	Power return path and reference for gate drive; low-inductance layout essential to minimize V_GS instability during fast switching.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	10 V/ns at T_J = 175 °C - Prevents false turn-on during high-speed commutation in full-bridge inverters driving inductive loads.
Fully characterized avalanche SOA	270 mJ single-pulse E_AS with validated thermal failure model - Enables safe operation in unclamped inductive switching without external snubbers.
Low C_oss eff. (ER)	665 pF - Reduces capacitive turn-off loss and improves light-load efficiency in ZVS resonant topologies.
RoHS-compliant lead-free finish	Meets IPC-J-STD-020 moisture sensitivity level 1 - Allows standard reflow profiles without pre-bake for high-volume SMT assembly.
Improved dynamic dV/dt ruggedness	Rated for >50 V/ns common-mode transients - Ensures gate oxide integrity in noisy motor drive environments with fast IGBT/MOSFET switching.

Applications

Brushed Motor Drive

BLDC Motor Control

Use Scenario: High-torque 24–48 V DC motor control in cordless power tools and robotic actuators.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology handling bidirectional 150 A peak current with 100 kHz PWM.

Use Value: 2.75 mΩ R_DS(on) minimizes I²R heating during stall conditions, extending battery runtime by 8–12 % versus 4.5 mΩ alternatives.

Use Scenario: Upper-leg switching in 3-phase BLDC inverter for e-bike controllers and HVAC compressors.

IC Role / Device Role / Timing Role: High-side synchronous rectifier with body diode recovery t_rr = 39 ns and Q_rr = 46 nC.

Use Value: Soft-recovery diode eliminates need for external freewheeling diodes, reducing BOM count and PCB area by 15 %.

OR-ing Power Switch

Resonant Mode PSU

Use Scenario: Redundant 12 V/48 V DC input OR-ing in telecom rectifiers and server power shelves.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing low-loss reverse-current blocking and forward conduction.

Use Value: 10 V/ns dV/dt rating prevents parasitic turn-on during hot-swap transients, improving system MTBF by >30 %.

Use Scenario: Primary-side switch in 600 W LLC resonant converter for datacenter PSUs.

IC Role / Device Role / Timing Role: Hard-switched ZVS-capable switch with C_oss eff. (TR) = 880 pF enabling zero-voltage turn-on at 300 kHz.

Use Value: 142 nC Q_g allows gate drive with 2 A peak current, achieving <150 ns dead-time control for >96 % peak efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.3 mΩ @ 10 V but higher Q_g = 175 nC; TO-220FP package with R_θJC = 1.0 °C/W.	Better conduction loss but slower switching; suited for <50 kHz fixed-frequency converters where thermal mass dominates.	Select when lower steady-state loss outweighs gate drive complexity and thermal interface constraints.
IXFH70N60X3	600 V rating, R_DS(on) = 12.5 mΩ, Q_g = 110 nC; Superjunction construction with lower C_oss but higher V_GS(th) = 3.5–5.5 V.	Designed for 400 V bus systems; unsuitable for 48 V BLDC due to excessive conduction loss and gate drive mismatch.	Reject for 60 V applications - higher R_DS(on) increases conduction loss by 4.5× and compromises efficiency below 100 V bus.

Compared with STL220N6F7, IRFS7537TRLPBF offers superior thermal resistance (0.65 vs. 1.0 °C/W) and lower gate charge for faster switching, while IXFH70N60X3's 600 V rating introduces unnecessary conduction penalty in 60 V designs - making IRFS7537TRLPBF optimal for compact, high-efficiency 48 V motor and power systems.

Availability

IRFS7537TRLPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and OR-ing power switches requiring stable component supply across automotive aftermarket, industrial automation, and telecom infrastructure programs.

Supply support for IRFS7537TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap device physics.

This device belongs to the StrongIRFET™ HEXFET® family, engineered specifically for high-current, high-ruggedness switching in motor control, UPS, and telecom power systems where avalanche reliability and body diode performance are mission-critical.

FAQ

What is the maximum allowable gate-source voltage for IRFS7537TRLPBF?

The absolute maximum V_GS is ±20 V per the datasheet Absolute Maximum Ratings table. Operation beyond ±15 V risks irreversible gate oxide damage, especially at elevated temperatures. For robust design, limit gate drive to +12 V to +15 V for turn-on and –5 V for active miller clamping during switching transitions.

Can IRFS7537TRLPBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature) enables natural current sharing. Layout must ensure matched gate loop inductance and symmetrical source routing; use Kelvin source connections and individual 10 Ω gate resistors to suppress oscillation between paralleled devices.

Does IRFS7537TRLPBF require a gate resistor for EMI control?

Yes - a 2.7 Ω series gate resistor is specified in the Dynamic Electrical Characteristics table for switching time measurements. This value balances EMI suppression (by limiting di/dt) against switching loss; values below 2 Ω increase radiated emissions, while above 5 Ω raises t_on/t_off and conduction loss in high-frequency operation.

What is the recommended PCB footprint for thermal performance?

Per Application Note AN-994, mount the D2-Pak on ≥1"² (6.5 cm²) of 2-oz copper with ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting the drain pad to inner ground planes. This achieves the rated R_θJA = 40 °C/W and sustains 173 A continuous current at T_C = 25 °C without exceeding 175 °C junction temperature.

IRFS7537TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 173A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IRFS7537TRLPBF FAQ

1.How can I place an order for IRFS7537TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7537TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7537TRLPBF reliable?

The price and inventory of IRFS7537TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7537TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFS7537TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7537TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7537TRLPBF?

IRFS7537TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7537TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7537TRLPBF?

For technical support, including IRFS7537TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7537TRLPBF requirements.

6.How does Aetrix verify that IRFS7537TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFS7537TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7537TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFS7537TRLPBF?

All IRFS7537TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7537TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7537TRLPBF part is unused and in its original packaging.

Return procedure for IRFS7537TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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