Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFU110PBF

Part No.:
IRFU110PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU110PBF.pdf
Description:
MOSFET N-CH 100V 4.3A TO251AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,736

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFU110PBF from Vishay Siliconix is a 100 V, 4.3 A N-channel Power MOSFET in IPAK (TO-251) package, featuring 0.54 Ω RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating for robust switching in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRFU110PBF datasheet, IRFU110PBF pinout, IRFU110PBF application, or IRFU110PBF equivalent, key selection factors include its 5.0 °C/W junction-to-case thermal resistance, 75 mJ single-pulse avalanche energy, fast 6.9 ns turn-on delay, and compatibility with standard gate drivers in medium-power industrial switching circuits.

Technical Context

This discrete N-channel enhancement-mode MOSFET operates with a gate threshold voltage of 2.0–4.0 V and supports linear-mode operation up to 150 °C junction temperature. Its dynamic dV/dt rating of 5.5 V/ns and body diode reverse recovery time of 100–200 ns enable reliable performance in inductive load switching.

The device integrates a low-inductance internal structure (LD = 4.0 nH, LS = 6.0 nH) and is rated for repetitive avalanche current of 4.3 A, making it suitable for unclamped inductive switching without external snubbers in flyback and buck topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum drain-source blocking voltage for 24–48 V system-level designs
RDS(on) 0.54 Ω @ VGS = 10 V - Enables ≤2.3 W conduction loss at 4.3 A continuous drain current
Qg 8.3 nC - Low gate charge allows efficient drive with standard 5–15 V logic-level gate drivers
EAS 75 mJ - Single-pulse avalanche energy rating supports robustness against inductive kickback
RthJC 5.0 °C/W - Enables direct heatsinking to PCB copper or small metal clips for thermal management
tr/tf 16 ns / 9.4 ns - Fast switching transitions reduce switching losses in 100–500 kHz SMPS applications

Pinout & Package

IRFU110PBF uses the IPAK (TO-251) surface-mount package with straight leads and drain-connected tab for thermal and electrical connection. The case is electrically connected to the drain terminal.

Pin/Terminal Circuit Role Design Meaning
G Gate Control electrode requiring ≤±20 V gate-source voltage; low 2.3 nC Qgs enables fast turn-on
D Drain Main high-side power terminal; internally connected to exposed tab for thermal path and current return
S Source Reference node for gate drive and current sensing; source inductance of 6.0 nH affects switching ringing

Key Features

Feature Design Value
Repetitive avalanche rated Supports 4.3 A IAR and 2.5 mJ EAR without derating in unclamped inductive circuits
Dynamic dV/dt rating 5.5 V/ns immunity prevents spurious turn-on during high-speed voltage transients
Fast switching 6.9 ns td(on), 16 ns tr, 15 ns td(off), 9.4 ns tf enable high-frequency operation up to 500 kHz
Ease of paralleling Positive RDS(on) temperature coefficient ensures current sharing across multiple devices
Simple drive requirements Threshold voltage range (2.0–4.0 V) and low Qg allow direct interface with microcontroller GPIO or dedicated gate drivers

Applications

DC-DC Converter Switch Brushed DC Motor Driver

Use Scenario: High-efficiency 48 V input buck converter delivering 5–12 V at up to 3 A.

IC Role / Device Role / Timing Role: Primary high-side switch operating at 250 kHz with synchronous rectification.

Use Value: 0.54 Ω RDS(on) and 8.3 nC Qg minimize conduction and switching losses, achieving >92% efficiency.

Use Scenario: H-bridge driver for 24 V brushed motors in industrial actuators and HVAC dampers.

IC Role / Device Role / Timing Role: Low-side switching element with PWM control at 20 kHz.

Use Value: Repetitive avalanche rating absorbs back-EMF spikes during motor commutation without external clamping.

AC-DC Auxiliary Supply LED Driver Switch

Use Scenario: Flyback auxiliary supply powering control circuitry in offline SMPS.

IC Role / Device Role / Timing Role: Self-oscillating or fixed-frequency primary switch with unclamped inductive stress.

Use Value: 75 mJ EAS and 5.5 V/ns dV/dt rating ensure reliability under transformer leakage inductance stress.

Use Scenario: Constant-current LED driver for commercial signage with 36 V string voltage.

IC Role / Device Role / Timing Role: PWM-controlled series switch regulating average LED current.

Use Value: Fast 9.4 ns fall time and low Qgd (3.8 nC) suppress switching noise that could interfere with analog dimming signals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFU014PBF Lower VDS (60 V), lower RDS(on) (0.27 Ω), higher ID (8.4 A) Not suitable for 100 V bus applications; better for 24–36 V systems with higher current demand Select when operating voltage ≤60 V and lower on-resistance is prioritized over voltage margin
STP16NF10 Same VDS (100 V), higher RDS(on) (0.22 Ω), TO-220 package, no avalanche rating Requires external avalanche protection in inductive loads; larger footprint and higher thermal resistance Choose only if through-hole mounting is mandatory and avalanche robustness is handled externally

Compared with IRFU110PBF, IRFU014PBF offers higher current capability at lower voltage, while STP16NF10 trades avalanche ruggedness and compact IPAK packaging for legacy through-hole compatibility-neither is pin-compatible, and both require layout revision for substitution.

Availability

IRFU110PBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, and auxiliary power supplies requiring stable component supply and long-term industrial availability.

Supply support for IRFU110PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFU110PBF belongs to Vishay's third-generation Power MOSFET family, engineered for cost-effective, rugged switching in medium-power applications where avalanche tolerance and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current for IRFU110PBF at 100 °C case temperature?

The IRFU110PBF supports 2.7 A continuous drain current at TC = 100 °C, derated from 4.3 A at 25 °C using a linear derating factor of 0.2 W/°C. This reflects thermal limits of the IPAK package and must be validated with actual board-level heatsinking in the target application.

Does IRFU110PBF have a built-in body diode, and what are its key parameters?

Yes, IRFU110PBF includes an integral body diode rated for 1.5 A continuous and 12 A pulsed source-drain current. Its forward voltage is ≤2.5 V at 1.5 A and 25 °C, with reverse recovery time of 100–200 ns and Qrr of 0.44–0.88 μC-critical for snubberless flyback and synchronous rectifier design.

Is IRFU110PBF suitable for logic-level gate drive?

No, IRFU110PBF is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but full enhancement requires VGS = 10 V to achieve the specified 0.54 Ω RDS(on). It is designed for standard 10 V gate drivers-not 3.3 V or 5 V microcontroller outputs without level-shifting.

What is the thermal resistance from junction to case for IRFU110PBF, and how does it impact heatsinking?

The IRFU110PBF has a maximum junction-to-case thermal resistance (RthJC) of 5.0 °C/W. This low value means effective heatsinking can be achieved via direct contact between the drain-connected tab and a copper pour or metal clip, enabling >20 W power dissipation with modest thermal interface materials.

Can IRFU110PBF replace IRFU024N in an existing design?

No-IRFU024N has VDS = 240 V and RDS(on) = 0.075 Ω, while IRFU110PBF is rated for only 100 V and 0.54 Ω. Substituting IRFU110PBF would risk catastrophic failure in 200+ V applications and increase conduction losses significantly. Always verify voltage, current, and thermal margins before replacement.

IRFU110PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
540mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
180 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251AA

IRFU110PBF FAQ

1.How can I place an order for IRFU110PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU110PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU110PBF reliable?

The price and inventory of IRFU110PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU110PBF is usually 5 days.

3.What payment methods are accepted for IRFU110PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU110PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU110PBF?

IRFU110PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU110PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU110PBF?

For technical support, including IRFU110PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU110PBF requirements.

6.How does Aetrix verify that IRFU110PBF is sourced from the original manufacturer or authorized distributors?

All IRFU110PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU110PBF meets industry standards.

7.What is the process for return or replacement of IRFU110PBF?

All IRFU110PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU110PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU110PBF part is unused and in its original packaging.

Return procedure for IRFU110PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFU110PBF Tags

  • IRFU110PBF
  • IRFU110PBF PDF
  • IRFU110PBF Datasheet
  • IRFU110PBF Specifications
  • IRFU110PBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRFU110PBF
  • Buy IRFU110PBF
  • IRFU110PBF Price
  • IRFU110PBF Distributor
  • IRFU110PBF Supplier
  • IRFU110PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER