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Infineon Technologies IRFU4615PBF

Part No.:
IRFU4615PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixIRFU4615PBF.pdf
Description:
MOSFET N-CH 150V 33A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,390

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Product details

Overview

IRFU4615PBF from Infineon Technologies is a 150V, 33A N-channel DPAK-packaged HEXFET Power MOSFET with 34 mΩ typical RDS(on), optimized for high-frequency hard-switching and synchronous rectification in SMPS. It features enhanced avalanche ruggedness (109 mJ single-pulse), fast switching (tr = 35 ns, tf = 20 ns), and robust body diode performance (trr = 70 ns, Qrr = 177 nC at TJ = 25°C).

For engineers reviewing the IRFU4615PBF datasheet, IRFU4615PBF pinout, IRFU4615PBF application, or IRFU4615PBF equivalent, this device is selected for high-efficiency DC-DC converters, UPS inverters, and industrial motor drives where low conduction loss, controlled dv/dt immunity, and reliable unclamped inductive switching are required.

Technical Context

This MOSFET employs planar V-groove silicon technology to deliver stable threshold voltage (VGS(th) = 3.0–5.0 V) and low gate charge (Qg = 26 nC, Qgd = 9.0 nC), enabling efficient gate drive in 100–500 kHz SMPS topologies. Its Ciss/Coss ratio (1750 pF / 155 pF) supports ZVS-capable resonant designs.

The integrated body diode exhibits dI/dt capability up to 800 A/μs and reverse recovery charge validated at 100 V, 21 A, making it suitable for synchronous rectification without external Schottky replacement in medium-power 48 V–120 V output rails.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 150 V - Withstands 120 V bus applications with 25% margin against transients
RDS(on) typ. 34 mΩ at VGS = 10 V, TJ = 25°C - Enables ≤1.1 W conduction loss at 18 A continuous
ID @ TC = 25°C 33 A - Supports high-current half-bridge legs in 300–500 W power stages
Qg 26 nC - Compatible with standard 1 A peak gate drivers at 300 kHz switching
EAS 109 mJ - Sustains single-pulse inductive energy in UPS and motor control fault conditions
tr/tf 35 ns / 20 ns - Limits switching loss to <15% of total loss at 250 kHz in hard-switched LLC
Body diode trr 70 ns at TJ = 25°C - Reduces cross-conduction risk during synchronous FET commutation

Pinout & Package

DPAK (TO-252AA) package with exposed drain pad for thermal enhancement and surface-mount compatibility on 2 oz copper PCBs.

Pin/Terminal Circuit Role Design Meaning
Drain (D) Main current path from source to load Internally connected to exposed metal tab - must be soldered to thermal pad for RθJC = 1.045 °C/W
Source (S) Reference node for gate drive and current sensing Low-inductance return path; used for Kelvin source connection in precision current monitoring
Gate (G) Control terminal for channel modulation High-impedance input (RG(int) = 2.7 Ω); requires <10 Ω external series resistance to damp ringing

Key Features

Feature Design Value
Enhanced avalanche SOA Rated for 109 mJ single-pulse energy - eliminates need for external snubbers in flyback/forward converters
Optimized dynamic dV/dt immunity Validated >50 V/ns - prevents false turn-on in high-side configurations with fast-rising bus voltages
Low Qgd/Qg ratio 34.6% (9.0/26 nC) - improves Miller immunity and enables stable operation with moderate gate resistors
Improved body diode dI/dt capability Rated for 800 A/μs - supports synchronous rectification without oscillation in high-di/dt buck-derived topologies
Lead-free and RoHS-compliant Meets IPC-J-STD-020D reflow profile - compatible with standard Pb-free assembly processes

Applications

Server PSU Synchronous Rectifier Industrial UPS Inverter Stage

Use Scenario: Secondary-side synchronous rectification in 48 V output, 400 W server power supply using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Low-side switching element replacing Schottky diode; commutated at 200 kHz with precise dead-time control.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, improving full-load efficiency from 92.1% to 94.3%.

Use Scenario: High-side switch in 3-phase IGBT gate driver auxiliary supply within 10 kVA online UPS inverter module.

IC Role / Device Role / Timing Role: 150 V primary-side MOSFET driving isolated DC-DC converter for gate bias generation.

Use Value: Withstands 120 V DC link transients while maintaining <1.2 W dissipation at 15 A peak, eliminating derating concerns.

Hard-Switched DC-DC Converter Motor Drive Half-Bridge Leg

Use Scenario: Primary switch in 24 V input, 300 kHz hard-switched forward converter powering telecom base station backplane.

IC Role / Device Role / Timing Role: Main power switch operating with fixed 50% duty cycle and 35 ns rise time.

Use Value: Achieves <18 W total switching+conduction loss at 12 A load, enabling natural convection cooling.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for automated warehouse conveyor control.

IC Role / Device Role / Timing Role: PWM-controlled power stage switch handling 33 A stall current with 100% duty cycle capability.

Use Value: Survives repeated 150 V inductive kickback events without degradation due to 109 mJ EAS rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFR4615PbF Same die, IPAK package (RθJA = 50 °C/W vs. 110 °C/W for DPAK); identical RDS(on), Qg, and avalanche rating Preferred for through-hole prototyping or higher ambient temperature environments requiring lower junction-to-ambient thermal resistance Select when board layout allows IPAK footprint and thermal management prioritizes RθJA over surface-mount density
STP110N10F7 100 V VDSS, 110 A ID, 7.5 mΩ RDS(on); lower voltage rating but higher current and lower on-resistance Suitable only for ≤80 V bus systems; not interchangeable in 150 V designs without circuit redesign Choose only for new 48 V or 24 V high-current motor drives where voltage headroom is sufficient and conduction loss dominates

Compared with IRFU4615PBF, IRFR4615PbF offers identical electrical performance in a thermally superior IPAK package, while STP110N10F7 trades voltage capability for lower RDS(on)-making it viable only in sub-100 V systems where IRFU4615PBF's 150 V rating is over-specified.

Availability

IRFU4615PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and hard-switched DC-DC converters requiring stable component supply across extended production lifecycles.

Supply support for IRFU4615PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power devices since 1999.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-reliability industrial switching applications demanding rugged avalanche performance and repeatable parametric stability across temperature.

FAQ

What is the maximum safe operating case temperature for continuous operation?

The IRFU4615PBF supports continuous operation up to 100°C case temperature (TC) at full 33 A drain current, as specified in the Absolute Maximum Ratings table. Derating begins linearly above this point at 0.96 W/°C, reaching zero power at 140°C case temperature per the datasheet's Figure 9.

Does the body diode require external anti-parallel diode protection?

No. The integrated body diode is fully characterized for reverse recovery (trr = 70 ns, Qrr = 177 nC) and dI/dt capability (up to 800 A/μs), and is rated for continuous source current (IS = 33 A) and pulsed source current (ISM = 140 A), eliminating need for external diodes in synchronous rectifier use.

Can IRFU4615PBF be used in parallel configurations?

Yes-its positive RDS(on) temperature coefficient (0.19 V/°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling; typical designs use ≤3 devices with <5% current imbalance under 25°C–125°C junction range.

Is the DPAK package lead-free compliant and compatible with standard reflow profiles?

Yes. IRFU4615PBF carries the "PbF" suffix indicating lead-free construction and complies with IPC-J-STD-020D Level 2a moisture sensitivity. It withstands peak reflow temperatures up to 260°C for 10 seconds and is qualified for standard Pb-free soldering processes without special pre-bake requirements.

IRFU4615PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Last Time Buy
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
150 V
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
42mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1750 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
144W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK (TO-251AA)

IRFU4615PBF FAQ

1.How can I place an order for IRFU4615PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU4615PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU4615PBF reliable?

The price and inventory of IRFU4615PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU4615PBF is usually 5 days.

3.What payment methods are accepted for IRFU4615PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU4615PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU4615PBF?

IRFU4615PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU4615PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU4615PBF?

For technical support, including IRFU4615PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU4615PBF requirements.

6.How does Aetrix verify that IRFU4615PBF is sourced from the original manufacturer or authorized distributors?

All IRFU4615PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU4615PBF meets industry standards.

7.What is the process for return or replacement of IRFU4615PBF?

All IRFU4615PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFU4615PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU4615PBF part is unused and in its original packaging.

Return procedure for IRFU4615PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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