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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors IRFZ24N,127

Name: IRFZ24N,127
Brand: NXP Semiconductors
SKU: IRFZ24N,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ24N,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ24N,127.pdf

Description:: MOSFET N-CH 55V 17A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ24N,127 from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode TrenchMOS™ power transistor in TO220AB package, rated for 55 V drain-source voltage, 17 A DC drain current at 25 °C, and 45 W total power dissipation. It features 70 mΩ R_DS(ON) at V_GS = 10 V and integrated ESD protection up to 2 kV, designed for switched-mode power supplies and general-purpose switching.

For engineers reviewing the IRFZ24N,127 datasheet, IRFZ24N,127 pinout, IRFZ24N,127 application, or IRFZ24N,127 equivalent, key selection criteria include its low on-resistance, avalanche energy rating of 30 mJ, thermal resistance junction-to-mounting-base of 3.3 K/W, gate threshold voltage range (2.0–4.0 V), and reverse diode forward voltage of 0.95–1.2 V at 19.7 A.

Technical Context

The IRFZ24N,127 employs trench-gate MOSFET architecture to achieve low R_DS(ON) and high transconductance (g_fs ≥ 1 S). Its integral body diode supports synchronous rectification and inductive load switching with 32 ns reverse recovery time and 0.12 µC Q_rr.

Rated for 175 °C maximum junction temperature and 2 kV HBM ESD tolerance, it operates across -55 °C to +175 °C storage/operating range. The device sustains unclamped inductive turn-off energy up to 30 mJ under specified conditions (ID = 10 A, VDD ≤ 25 V, VGS = 10 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum continuous drain-source blocking voltage; defines upper limit for DC bus or flyback clamp applications.
I_D (DC)	17 A at T_mb = 25 °C - Continuous current handling capability with heatsink; derates to 12 A at 100 °C mounting base.
R_DS(ON)	70 mΩ max at V_GS = 10 V, T_j = 25 °C - Low conduction loss enabling efficient 12–24 V switching stages.
Q_g	19 nC max - Total gate charge determines drive strength requirement; enables fast switching with moderate gate drivers.
T_j max	175 °C - High-temperature operation supports compact thermal design in enclosed industrial power modules.
WDSS	30 mJ - Non-repetitive unclamped inductive energy rating; critical for relay/snubberless solenoid driving.
V_GS(th)	2.0–4.0 V - Gate threshold voltage range ensures reliable turn-on with standard 5 V or 3.3 V logic-level drivers.

Pinout & Package

Package: TO220AB (SOT78), plastic envelope with metal tab electrically connected to drain; net mass 2 g; UL94 V0 compliant epoxy.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤20 V gate-source voltage; sensitive to ESD (2 kV HBM).
2	Drain	Main power output terminal; internally bonded to metal mounting tab for thermal and electrical connection.
3	Source	Reference node for gate drive and current sensing; internal source inductance 7.5 nH (6 mm lead length).
Tab	Drain	Electrically and thermally tied to pin 2; must be isolated from chassis unless drain is at ground potential.

Key Features

Feature	Design Value
TrenchMOS™ technology	Enables 70 mΩ R_DS(ON) at 10 V drive while maintaining ruggedness and low gate charge.
Integral zener-protected body diode	Provides 2 kV ESD immunity and supports bidirectional current flow in half-bridge freewheeling paths.
Low gate-drain charge (Q_gd)	7.2 nC max - Reduces Miller effect, improving noise immunity and enabling stable high-frequency PWM control.
High avalanche energy rating	30 mJ non-repetitive - Allows safe operation during inductive load turn-off without external snubbers.
Thermal resistance R_{th j-mb}	3.3 K/W max - Enables effective heat transfer to heatsink via metal tab, supporting >30 W continuous dissipation.

Applications

DC-DC Converter Primary Switch	Motor Drive Half-Bridge Leg
Use Scenario: High-efficiency 12 V input buck converter delivering 5–12 V at up to 15 A. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty-cycle modulated at 100–500 kHz. Use Value: 70 mΩ R_DS(ON) minimizes conduction loss; 19 nC Q_g allows clean switching with low-side gate driver ICs like TC4427.	Use Scenario: 24 V brushed DC motor driver with PWM speed control and direction reversal. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; commutated at 1–20 kHz with dead-time control. Use Value: 32 ns t_rr and 0.12 µC Q_rr reduce shoot-through risk; 17 A I_D supports peak stall currents up to 68 A.
AC-DC SMPS Secondary-Side Rectifier	Industrial Solenoid Driver
Use Scenario: Synchronous rectification in 12 V/20 A output stage of offline flyback or LLC resonant converter. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal. Use Value: Body diode V_SD = 0.95 V at 19.7 A reduces forward drop vs. 0.5 V Schottky at same current, improving efficiency by ~0.8%.	Use Scenario: 24 V DC solenoid actuator control in PLC I/O module with snubberless turn-off. IC Role / Device Role / Timing Role: Unclamped inductive switch; subjected to L·di/dt voltage spikes during de-energization. Use Value: 30 mJ WDSS rating absorbs energy from 10 A coil current decay without external clamping, simplifying PCB layout.

DC-DC Converter Primary Switch

Motor Drive Half-Bridge Leg

Use Scenario: High-efficiency 12 V input buck converter delivering 5–12 V at up to 15 A.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty-cycle modulated at 100–500 kHz.

Use Value: 70 mΩ R_DS(ON) minimizes conduction loss; 19 nC Q_g allows clean switching with low-side gate driver ICs like TC4427.

Use Scenario: 24 V brushed DC motor driver with PWM speed control and direction reversal.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; commutated at 1–20 kHz with dead-time control.

Use Value: 32 ns t_rr and 0.12 µC Q_rr reduce shoot-through risk; 17 A I_D supports peak stall currents up to 68 A.

AC-DC SMPS Secondary-Side Rectifier

Industrial Solenoid Driver

Use Scenario: Synchronous rectification in 12 V/20 A output stage of offline flyback or LLC resonant converter.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal.

Use Value: Body diode V_SD = 0.95 V at 19.7 A reduces forward drop vs. 0.5 V Schottky at same current, improving efficiency by ~0.8%.

Use Scenario: 24 V DC solenoid actuator control in PLC I/O module with snubberless turn-off.

IC Role / Device Role / Timing Role: Unclamped inductive switch; subjected to L·di/dt voltage spikes during de-energization.

Use Value: 30 mJ WDSS rating absorbs energy from 10 A coil current decay without external clamping, simplifying PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF06L	R_DS(ON) = 60 mΩ @ 10 V; V_DS = 60 V; Q_g = 16 nC; TO220FP package (isolated tab)	Higher voltage rating and lower R_DS(ON), but reduced avalanche energy (22 mJ) and no documented 2 kV ESD rating.	Preferred where higher V_DS margin or lower conduction loss is critical, and isolation of drain tab is required.
IRFZ44N	R_DS(ON) = 28 mΩ @ 10 V; I_D = 49 A; P_tot = 94 W; same TO220AB package and pinout	Lower on-resistance and higher current/power ratings, but larger gate charge (35 nC) and higher cost.	Drop-in replacement when higher efficiency or thermal headroom is needed; verify gate driver capability for increased Q_g.

Compared with STP16NF06L and IRFZ44N, the IRFZ24N,127 offers balanced performance for cost-sensitive 55 V applications-lower gate drive demand than IRFZ44N and better ESD robustness than STP16NF06L-making it optimal for mid-power industrial switching where reliability and drive simplicity are prioritized.

Availability

IRFZ24N,127 is available at Aetrix Electronics and suitable for switched-mode power supplies, motor drives, and industrial solenoid control requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFZ24N,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications.

The IRFZ24N,127 belongs to NXP's legacy TrenchMOS™ power MOSFET product line, engineered for high-reliability, medium-voltage switching in cost-sensitive industrial power conversion and motion control systems.

FAQ

What is the maximum continuous drain current for IRFZ24N,127 at 100 °C mounting base temperature?

The IRFZ24N,127 supports 12 A DC drain current at T_mb = 100 °C, per its limiting values table. This derating reflects thermal constraints of the TO220AB package and must be verified against actual heatsink performance and ambient conditions in the final design. The IRFZ24N,127 data sheet specifies this value explicitly under ID (DC) conditions at elevated temperature.

Does IRFZ24N,127 have a built-in body diode, and what are its key characteristics?

Yes, the IRFZ24N,127 integrates a parasitic body diode inherent to its vertical MOSFET structure. Key parameters include V_SD = 0.95–1.2 V at 19.7 A, t_rr = 32 ns, and Q_rr = 0.12 µC. These values are measured with V_GS = 0 V and enable use in freewheeling and synchronous rectification roles without external diodes. The IRFZ24N,127 datasheet confirms these in the Reverse Diode Characteristics section.

Can IRFZ24N,127 be driven directly by a 3.3 V microcontroller GPIO pin?

No-IRFZ24N,127 has a gate threshold voltage range of 2.0–4.0 V, and full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(ON) of 70 mΩ. A 3.3 V drive yields high on-resistance (>500 mΩ) and excessive heating. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is required. This behavior is confirmed in the Static Characteristics table of the IRFZ24N,127 datasheet.

What is the thermal resistance from junction to mounting base for IRFZ24N,127?

The IRFZ24N,127 has a maximum thermal resistance R_{th j-mb} of 3.3 K/W, measured from junction to the metal mounting tab (pin 2 and tab). This value assumes proper mechanical mounting with thermal compound and adequate heatsink surface area. It is specified in the Thermal Resistances section of the IRFZ24N,127 product specification and is critical for calculating junction temperature rise.

Is IRFZ24N,127 suitable for avalanche-rated operation, and what is its energy rating?

Yes-the IRFZ24N,127 is characterized for non-repetitive unclamped inductive switching with a rated avalanche energy WDSS of 30 mJ under defined test conditions (ID = 10 A, VDD ≤ 25 V, VGS = 10 V, RGS = 50 Ω, Tmb = 25 °C). This rating is documented in the Avalanche Limiting Value table of the IRFZ24N,127 datasheet and supports snubberless solenoid and relay driving.

IRFZ24N,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ24N,127 FAQ

1.How can I place an order for IRFZ24N,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ24N,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ24N,127 reliable?

The price and inventory of IRFZ24N,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ24N,127 is usually 5 days.

3.What payment methods are accepted for IRFZ24N,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ24N,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ24N,127?

IRFZ24N,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ24N,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ24N,127?

For technical support, including IRFZ24N,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ24N,127 requirements.

6.How does Aetrix verify that IRFZ24N,127 is sourced from the original manufacturer or authorized distributors?

All IRFZ24N,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ24N,127 meets industry standards.

7.What is the process for return or replacement of IRFZ24N,127?

All IRFZ24N,127 units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ24N,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ24N,127 part is unused and in its original packaging.

Return procedure for IRFZ24N,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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