Vishay Siliconix IRFZ34S

Overview

IRFZ34S from Vishay Siliconix is a 60 V, 30 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, optimized for high-efficiency switching in DC-DC converters, motor drives, and power supplies. It delivers 0.050 Ω R_DS(on) at V_GS = 10 V, 46 nC total gate charge, and supports 175 °C junction operation with fast 13 ns turn-on delay and 100 ns rise time.

For engineers reviewing the IRFZ34S datasheet, IRFZ34S pinout, IRFZ34S application, or IRFZ34S equivalent, key selection criteria include its 60 V drain-source rating, low on-resistance under 10 V gate drive, avalanche energy rating of 200 mJ, thermal resistance of 1.7 °C/W junction-to-case, and compatibility with surface-mount high-current PCB layouts requiring minimal heatsinking.

Technical Context

The IRFZ34S employs third-generation silicon process technology to achieve low R_DS(on) per die area while maintaining rugged unclamped inductive switching capability. Its D2PAK package integrates a large copper drain tab for low thermal resistance and high current handling, enabling 88 W power dissipation at T_C = 25 °C.

Designed as a single N-channel switch, it features a built-in body diode with 120–230 ns reverse recovery time and 700–1400 μC Q_rr, supporting synchronous rectification and freewheeling in hard-switched topologies. Gate threshold voltage ranges from 2.0 V to 4.0 V, ensuring reliable turn-on with standard logic-level drivers.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab (pin 2), three terminals: Gate (pin 1), Drain (pin 2), Source (pin 3). Thermal pad soldered to PCB copper pour for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44S, the IRFZ34S offers lower gate charge for faster switching and reduced driver stress, while SiHFZ34S-GE3 provides identical performance with certified green materials-making IRFZ34S the optimal balance of speed, loss, and supply-chain flexibility for industrial power designs.

Availability

IRFZ34S is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and LED drivers requiring stable component supply across production lifecycles.

Supply support for IRFZ34S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and resistors for industrial, automotive, and computing markets.

The IRFZ34S belongs to Vishay's third-generation power MOSFET family, engineered for low R_DS(on), fast switching, and rugged avalanche performance in high-current surface-mount power conversion applications.

FAQ

What is the maximum continuous drain current rating for IRFZ34S at 100 °C case temperature?

The IRFZ34S supports 21 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the D2PAK package's 1.7 °C/W junction-to-case resistance and safe operating area constraints. At higher ambient temperatures or with limited heatsinking, design margins must be verified using the SOA curve in Figure 8 of the Vishay datasheet 90368. The IRFZ34S remains within spec under these conditions when mounted per recommended PCB pad layout.

Does IRFZ34S have a built-in body diode, and what are its key parameters?

Yes, the IRFZ34S integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key diode parameters include 30 A continuous forward current (I_S), 120–230 ns reverse recovery time (t_rr), 700–1400 μC reverse recovery charge (Q_rr), and 1.6 V forward voltage (V_SD) at 30 A and 25 °C. These values are measured with V_GS = 0 V and define freewheeling behavior in bridge configurations. The IRFZ34S body diode is not optimized for ultrafast recovery but is sufficient for non-critical snubbing and basic motor commutation.

Can IRFZ34S be driven directly by a 3.3 V microcontroller GPIO pin?

No, the IRFZ34S cannot be fully enhanced with 3.3 V gate drive. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and R_DS(on) is specified only at V_GS = 10 V (0.050 Ω). At 3.3 V, the device operates in weak inversion with high on-resistance (>1 Ω), causing excessive conduction loss and thermal runaway. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is required to deliver ≥10 V to the IRFZ34S gate. Using 3.3 V directly risks failure under load.

What is the avalanche energy rating of IRFZ34S, and how is it tested?

The IRFZ34S is rated for 200 mJ single-pulse avalanche energy (E_AS), tested per JEDEC standard JESD24-1 with V_DD = 25 V, L = 260 μH, R_g = 25 Ω, and I_AS = 30 A. This rating validates robustness against inductive switching transients in relay drivers, solenoid controls, and motor phase-legs where voltage spikes exceed V_DS. Repetitive avalanche is not guaranteed; the IRFZ34S should be operated within SOA limits for sustained reliability. The test waveform and conditions are documented in Figure 12 of datasheet 90368.

Is IRFZ34S pin-compatible with IRFZ44N or other legacy TO-220 devices?

No, the IRFZ34S is not pin-compatible with IRFZ44N or any TO-220 device. It uses the D2PAK (TO-263) surface-mount package with three terminals arranged as Gate–Drain–Source (left-to-right on top view), whereas IRFZ44N uses TO-220 with Gate–Drain–Source (left-to-right on front view) but different mechanical dimensions, mounting holes, and thermal pad configuration. PCB layout, thermal relief, and reflow profile must be redesigned for D2PAK. The IRFZ34S shares footprint compatibility only with other D2PAK devices like SiHFZ34S-GE3.